15:50 - 16:10

Compact Double-Gate MOSFET Model Correctly Predicting Volume-Inversion Effects

N. Sadachika, H. Oka, R. Tanabe, T. Murakami, H. J. Mattausch, M. Miura-Mattausch

16:10 - 16:30

Modeling NAND Flash Memories for Circuit Simulations

L. Larcher, A. Padovani, P. Pavan, I. Rimmaudo, A. Calderoni, G. Molteni, F. Gattel, P. Fantini

16:30 - 16:50

Surface-Potential Based Compact Model for Quantum Effects in Planar and Double-Gate MOSFET

A. Serov, S.-M. Hong, Y. J. Park, H. S. Min

16:50 - 17:10

Statistical Compact Model Parameter Extraction Strategy for Intrinsic Parameter Fluctuation

B. Cheng, S. Roy, A. Asenov