P1

Calibrated Hydrodynamic Simulation of Deeply-Scaled Well-Tempered Nanowire Field Effect Transistors

O. M. Nayfeh, D. A. Antoniadis

P2

The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNTFETs

M. Pourfath, H. Kosina

P3

Monte Carlo Modeling of Schottky Contacts on Semiconducting Carbon Nanotubes

H.-N. Nguyen, H. Cazin d'Honincthun, C. Chapus, A. Bournel, S. Galdin-Retailleau, P. Dollfus, N. Locatelli

P4

Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions

H. Kosina, O. Triebl, T. Grasser

P5

A Simplified Quantum Mechanical Model for the Electron Distribution in a Si Nanowire

W. Magnus, B. Soree, G. Pourtois, S. Compernolle

P6

Efficient Green's Function Algorithms for Atomistic Modeling of Si-Nanowire FETs

A. Pecchia, G. Penazzi, A. Di Carlo

P7

Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure:

Stress Dependence of the Nonparabolicity Parameter

V. A. Sverdlov, G. Karlowatz, E. Ungersboeck, H. Kosina

P8

Maxwell Equations on Unstructured Grids Using Finite-Integration Methods

W.J. Schoenmaker, P. Meuris, E. Janssens, K.-J. van der Kolk, N. van der Meijs, W.H.A. Schilders

P9

Adaptive Time Discretization for a Transient Quantum Drift-Diffusion Model

T. Shimada, S. Odanaka

P10

MDS - A New Highly Extensible Device Simulator

T. D. Linton Jr., K. Foley, F. Heinz, R. Kotlyar, P. Matagne, A. Eremenko, S. Sergienko, M. Stettler, M. D. Giles, B. Voinov

P11

Influence of the Poole-Frenkel Effect on Programming and Erasing in Charge Trapping Memories

Y. Song, G. Du, J. Yang, R. Jin, R. Han, K.-H. Lee, X. Liu

P12

On the Magnetic Field Extraction for On-Chip Inductance Calculation

A. Nentchev, S. Selberherr

P13

EMC Simulation of THz Emission from Semiconductor Devices

V. M. Polyakov, F. Schwierz

P14

Enhanced Band-to-Band Tunneling-Induced-Hot-Electron Injection in P-Channel Flash by

SiGe Channel and HfO2 Tunnel Dielectric

C.-C. Wang, K.-S. Chang-Liao, C.-Y. Lu, T.-K. Wang

P15

Challenges in 3D Process Simulation for Advanced Technology Understanding

S. M. Cea, A. Eremenko, P. Fleischmann, M. D. Giles, S. Halama, F. O. Heinz, A. N. Ivanov, P. H. Keys, A. D. Lilak

P16

Characteristic Fluctuation Dependence on Discrete Dopant for 16nm SOI FinFETs at Different Temperature

Y. Li, C.-H. Hwang, S.-M. Yu, H.-M. Huang, T.-C. Yeh, H.-W. Cheng, H.-M. Chen, J.-R. Hwang, F.-L. Yang

P17

Hot-Carrier Behaviour of a 0.35nm High-Voltage n-Channel LDMOS Transistor

J.-M. Park, H. Enichlmair, R. Minixhofer

P18

Dynamic Monte Carlo Simulation of an Amorphous Organic Device

G. Meller, L. Li, S. Holzer, H. Kosina

P19

Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation

L. Li, G. Meller, H. Kosina

P20

Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors

R. Wang, J. Zhuge, R. Huang

P21

Analysis of Process-Geometry Modulations in a 65 nm Technology Through 3D TCAD

L. Sponton, L. Bomholt, W. Fichtner

P22

Asymmetrical Triple-Gate FET

M.-H. Chiang, J.-N. Lin, K. Kim, C.-T. Chuang

P23

Process Variation-Aware Estimation of Static Leakage Power in Nano CMOS

B. P. Harish, N. Bhat, M. B. Patil

P24

The Optimization of Low Power Operation SRAM Circuit for 32nm Node

R. Tanabe, H. Anzai, Y. Ashizawa, H. Oka

P25

Device Design Evaluation of Multigate FETs Using Full 3D Process and Device TCAD Simulation

M. Nawaz, S. Decker, L.-F. Giles, W. Molzer, T. Schulz, K. Schrüfer, R. Mahnkopf

P26

Modeling and Extraction of Effective Lateral Doping Profile Using the

Relation of On-Resistance vs. Overlap Capacitance in (100) and (110)-Oriented MOSFETs

S.-D. Kim, B. Yang, S. Narasimha, A. Waite, K. Nummy, L. Black, H. Yin, H. J. Gossmann, S. Luning

P27

Molecular Orbital Examination of Negative-Bias Temperature Instability Mechanism

T. Maruizumi, J. Ushio, Y. Shiraki

P28

Process Margin Anaylsis and Yield Enhancement Through Statistical Topography Simulation

K.-B. Chang, W.-Y. Chung, S.-J. Kim, Y.-M. Ko, J.-J. Jang, T.-K. Kim, J.-K. Park, Y.-K. Park, M.-H. Yoo

P29

Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation

O. Ertl, C. Heitzinger, S. Selberherr

P30

Strained Contact Etch Stop Layer Integration: Geometry Design Impact

C. Populaire, D. Villanueva, S. Orain, H. Brillet-Rouxel

P31

Modeling of Deposition During C5F8/CO/O2/Ar Plasma Etching Using Topography and Composition Simulation

T. Ichikawa, T. Takase, N. Tamaoki

P32

Ab Initio Calculations of the Transport Through Single Molecules and Carbon Nanotubes

K. Hirose, N. Kobayashi, H. Ishii

P33

Three-Dimensional Sacrificial Etching

J. Cervenka, H. Ceric, O. Ertl, S. Selberherr

P34

Atomistic Study of Metal/High-K Interface

P.-Y. Prodhomme, P. Blaise, F. Fontaine-Vive, J. Even, M. Orlowski

P35

Ab-Initio Calculations of Indium Migration in Uniaxial Strained Silicon

Y.-K. Kim

P36

Noise Simulation of Nanoscale Devices Based on the Non-Equilibrium Green's Function Formalism

H.-H. Park, S.-M. Hong, S. Jin, H. S. Min, Y. J. Park

P37

RDF Analysis of Small-Signal Equivalent Circuit Parameters in MOSFET Devices

L. Oniciuc, P. Andrei