11:00 - 11:20

Modeling and Characterization of Advanced Phosphorus Ultra Shallow

Junction Using Germanium and Carbon Coimplants

L. P. Huang, K. C. Ku, Y. M. Sheu, C. F. Nieh, C. H. Chen, H. Chang, L. T. Wang, T. L. Lee, C. C. Wang, C. H. Diaz

11:20 - 11:40

Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth

H. Ceric, A. Nentchev, E. Langer, S. Selberherr

11:40 - 12:00

Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias

C. Awo-Affouda, M. O. Bloomfield, T. S. Cale

12:00 - 12:20

Modeling of Re-sputtering Induced Bridge of Tungsten Bit-Lines for

NAND Flash Memory Cell with 37nm Node Technology

B. Hwang, Y. Lee, J.-G. Min, H. Shin, N. Lim, S. Kim,

W.-Y. Chung, T.-K. Kim, J.-H. Park, Y.-K. Lee, D. Kwak, J. Park, W.-S. Lee

12:20 - 12:40

Efficient Mask Design for Inverse Lithograph Technology Based

on 2D Discrete Cosine Transformation (DCT)

J. Zhang, W. Xiong, M.-C. Tsai, Y. Wang, Z. Yu

12:40 - 13:00

Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment

A. Hoessinger, Z. Djuric, A. Babayan

11:00 - 11:20

Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs

C. Fiegna, M. Braccioli, S. C. Brugger, F. M. Bufler, P. Dollfus, V. Aubry-Fortuna, C. Jungemann, B. Meinerzhagen, P. Palestri, S. Galdin-Retailleau, E. Sangiorgi, A. Schenk, L. Selmi

11:20 - 11:40

Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs

S. Jin, M. V. Fischetti, T.-W. Tang

11:40 - 12:00

Pearson Effective Potential Vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFET

M.-A. Jaud, S. Barraud, J. Saint-Martin, A. Bournel, P. Dollfus, H. Jaouen

12:00 - 12:20

Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems

C. Jungemann

12:20 - 12:40

Energy Conservation in Collisional Broadening

Z. Aksamija, U. Ravaioli

12:40 - 13:00

A Simple Technique for the Monte Carlo Simulation of Transport in Quantum Wells

J. Kim, C.-Y. Chen, R. W. Dutton