15:50 - 16:10

Transient Characterization of Interface Traps in 4H-SiC MOSFETs

S. Potbhare, N. Goldsman, G. Pennington, A. Akturk, A. Lelis

16:10 - 16:30

Electro-Thermal, Transient, Mixed-Mode 2D Simulation Study of

SiC Power Thyristors Operating Under Pulsed-Power Conditions

L. M. Hillkirk, A. R. Hefner, R. W. Dutton, S. B. Bayne, H. O'Brien

16:30 - 16:50

Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes

D. Werber, G. Wachutka

16:50 - 17:10

Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge

Termination Structures

U. Knipper, F. Pfirsch, T. Raker, J. Niedermeyer, G. Wachutka

15:50 - 16:10

Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands

A.-T. Pham, C. Jungemann, B. Meinerzhagen

16:10 - 16:30

Monte Carlo Study on Number of Scattering Events for Quasi-Ballistic Transport in MOSFETs

Y. Ohkura, C. Suzuki

16:30 - 16:50

Modeling of Macroscopic Transport Parameters in Inversion Layers

M. Vasicek, M. Karner, E. Ungersboeck, M. Wagner, H. Kosina, T. Grasser

16:50 - 17:10

Study of the Junction Depth Effect on Ballistic Current Using Subband

Decomposition Method

M. A. Pourghaderi, W. Magnus, B. Sorée, M. Meuris, M. Heyns, K. De Meyer