09:40 - 10:00

Atomistic Modeling of Defect Diffusion in SiGe

P. Castrillo, R. Pinacho, J. E. Rubio, L. M. Vega, M. Jaraiz

10:00 - 10:20

Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches

A. Martinez-Limia, C. Steen, P. Pichler, N. Gupta, W. Windl, S. Paul, W. Lerch

10:20 - 10:40

Molecular Dynamics Modeling of Octadecaborane Implantation into Si

L. A. Marqués, L. Pelaz, I. Santos, P. López, M. Aboy

09:40 - 10:00

High Performance Strained Germanium Heterostructure FETs

T. Krishnamohan, D. Kim, C. Jungemann, A.-T. Pham, B. Meinerzhagen, Y. Nishi, K. C. Saraswat

10:00 - 10:20

Strain Induced Drain-Current Enhancement Mechanism in Short-Channel

Bulk Ge-pMOSFETs with Different Channel and Surface Orientations

H. Takeda, T. Ikezawa, M. Kawada, M. Hane

10:20 - 10:40

Validation of the Effect of Full Stress Tensor in Hole Transport

in Strained 65nm-node pMOSFETs

E. Tsukuda, Y. Kamakura, H. Takashino, T. Okagaki, T. Uchida, T. Hayashi, M. Tanizawa, K. Eikyu, S. Wakahara, K. Ishikawa, O. Tsuchiya, Y. Inoue, K. Taniguchi