Thursday, 27 September 2007

Session 7A: Future Devices II & Numerics

 

11:00 - 11:20

Hopping Transport of Electrons via Si-dot

 
   

H. Watanabe

 
 

11:20 - 11:40

Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method

 
   

J. Liu, G. Du, J. Cao, Z. Xia, Y. Wang, R. Han, X. Liu

 
 

11:40 - 12:00

Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation

 
   

Y. Cheng, I. M. Gamba, A. Majorana, C. W. Shu

 
 

12:00 - 12:20

Modeling of Shock Waves in Two-Dimensional Electron Channels: Effect of Tsunami

 
   

I.Semenikhin, E.Vostrikova, A.Ivanov, V. Ryzhii

 

Session 7B: III-V Devices

 

11:00 - 11:20

Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping

 
   

A. Nakajima, K. Itagaki, K. Horio

 
 

11:20 - 11:40

Electrothermal Monte Carlo Study of Charge Confinement in GaN HFETs

 
   

T. Sadi, R. W. Kelsall

 
 

11:40 - 12:00

Hydrodynamic Modeling of AlGaN/GaN HEMTs

 
   

S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr

 
 

12:00 - 12:20

Simulation of AlGaN/GaN HEMTs - Breakdown Voltage Enhancement Using Grating Field Plates

 
   

E. Bahat-Treidel, V. Sidorov, J. H. Würfl, G. Tränkle

 
 

12:20 - 12:40

Modelling of Hot Electron Effects in GaN/AlGaN HEMT with AlN Interlayer

 
   

A. Brannick, N. Zakhleniuk, B. Ridley, L. Eastman, J. Shealy, W. Schaff