Thursday, 27 September 2007
Session 7A: Future Devices II & Numerics
11:00 - 11:20 | Hopping Transport of Electrons via Si-dot | ||
H. Watanabe | |||
11:20 - 11:40 | Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method | ||
J. Liu, G. Du, J. Cao, Z. Xia, Y. Wang, R. Han, X. Liu | |||
11:40 - 12:00 | Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation | ||
Y. Cheng, I. M. Gamba, A. Majorana, C. W. Shu | |||
12:00 - 12:20 | Modeling of Shock Waves in Two-Dimensional Electron Channels: Effect of Tsunami | ||
I.Semenikhin, E.Vostrikova, A.Ivanov, V. Ryzhii |
Session 7B: III-V Devices
11:00 - 11:20 | Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping | ||
A. Nakajima, K. Itagaki, K. Horio | |||
11:20 - 11:40 | Electrothermal Monte Carlo Study of Charge Confinement in GaN HFETs | ||
T. Sadi, R. W. Kelsall | |||
11:40 - 12:00 | Hydrodynamic Modeling of AlGaN/GaN HEMTs | ||
S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr | |||
12:00 - 12:20 | Simulation of AlGaN/GaN HEMTs - Breakdown Voltage Enhancement Using Grating Field Plates | ||
E. Bahat-Treidel, V. Sidorov, J. H. Würfl, G. Tränkle | |||
12:20 - 12:40 | Modelling of Hot Electron Effects in GaN/AlGaN HEMT with AlN Interlayer | ||
A. Brannick, N. Zakhleniuk, B. Ridley, L. Eastman, J. Shealy, W. Schaff |