09:20 - 09:40

Physics-Based Simulation of 1/f Noise in MOSFETs under Large-Signal Operation

S.-M. Hong, H.-H. Park, C. H. Park, M. J. Lee, H. S. Min, Y. J. Park

09:40 - 10:00

Thin Body Effects to Suppress Random Dopant Fluctuations in Nano-Scaled MOSFETs

Y. Ashizawa, H. Oka

10:00 - 10:20

'Atomistic' Mesh Generation for the Simulation of Semiconductor Devices

M. Aldegunde, A. J. García-Loureiro, P. V. Sushko, A. Shluger, K. Kalna, A. Asenov

10:20 - 10:40

Line Edge and Gate Interface Roughness Simulations of Advanced VLSI SOI-MOSFETs

T. Herrmann, W. Klix, R. Stenzel, S. Duenkel, R. Illgen, J. Hoentschel, T. Feudel, M. Horstmann

09:20 - 09:40

Impact of Shear Strain and Quantum Confinement on <110> Channel

nMOSFET with High-Stress CESL

H. Takashino, T. Okagaki, T. Uchida, T. Hayashi, M. Tanizawa, E. Tsukuda,

K. Eikyu, S. Wakahara, K. Ishikawa, O. Tsuchiya, Y. Inoue

09:40 - 10:00

Analysis of Novel Stress Enhancement Effect Based on Damascene Gate Process with eSiGe S/D for pFETs

S. Yamakawa, J. Wang, Y. Tateshita, K. Nagano, M. Tsukamoto, H. Ohri, N. Nagashima, H. Ansai

10:00 - 10:20

Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner

K. H. Bach, R. Liebmann, M. Nawaz, C. Jungemann, E. Ungersboeck

10:20 - 10:40

3D Stress, Process and Device Simulation: Extraction of the Relevant Stress Tensor

F. M. Bufler, L. Sponton, R. Gautschi