Modelling of Reliability and Degradation of Nanoelectronic Devices

Chairman

Adam Foster (Aalto University)

Overview

As a warm-up to the SISPAD meeting, a short satellite workshop based around European 7th framework collaborative project, MORDRED will be held. It focuses on developing multiscale modelling technology, supported by comprehensive experimental characterization techniques, to study the degradation and reliability of next generation Complimentary-Metal-Oxide-Semiconductor (CMOS) devices. The project will provide technologists, device engineers and designers in the nano CMOS industry with tools, reference databases and examples of how to produce future devices that are economical, efficient, and meet high performance, reliability and degradation standards.

In this satellite workshop, the highlight contributions of the MORDRED project will be discussed alongside presentations outlining the key issues in the field from leading experts.

Location

Grand Central Hotel in Glasgow, Scotland, United Kingdom.

Programme (Provisional)

08:30
Registration & Gathering
09:00-09:10
Welcome
T. Grasser (TU Vienna)
Keynote
09:10-10:00
Will Reliability Limit Moore's Law?
Anthony Oates (TSMC)
10:00-10:30
Coffee Break
Morning Session
10:30-11:10
Experimental characterization of BTI defects
B. Kaczer (IMEC)
11:10-11:50
Modeling Electronic and Ionic Processes Involved in Degradation of Gate Dielectrics
A. Shluger (UCL)
11:50-12:30
3D 'atomistic’ Simulations of Statistical Reliability in nano-CMOS Transistors
A. Asenov (GSS)
12:30-13:30
Lunch
Afternoon Session
13:30-14:10
Advanced Modeling of charge trapping in oxide defects
T. Grasser (TU Vienna)
14:10-14:50
Compact modeling and circuit simulation of Reliability in scaled transistors
C. Millar (GSS)
14:50-15:20
Coffee Break
15:20-16:00
Atomic-level models for reliability assessment
G. Bersuker (SEMATECH)