The following invited speakers will be delivering plenary talks at SISPAD:
Jo Finders is a senior imaging scientist, double patterning specialist, and ASML fellow. He graduated in physics with an MSc in 1987, and a PhD in 1991 from Aachen University of Technology, Germany. From 1991 to 1994 he was on the university staff researching spectroscopic analysis of an artificial diamond. In 1994, he joined IMEC. In the micropatterning group, he conducted optical lithography research including resolution enhancement techniques, CD-control, and wafer CD-metrology. In 1997, he moved to ASML where he became a project leader. Here he defined the application requirements for ASML's QUASAR illumination, which led to the introduction of strong off-axis illumination techniques (e.g., dipole, double dipole) in customer applications. As an imaging scientist, his responsibilities vary from running feasibility projects in low-k1 imaging, to managing joint development programs with customers. He is currently focusing on the link between application requirements and scanner performance for 32 nm and beyond. He holds over 20 patents and has (co)-authored more than 60 papers in optical lithography. In June 2006, he was elected ASML fellow.
Chenming Hu is the TSMC Distinguished Professor of UC Berkeley. He was formerly the Chief Technology Officer of TSMC. He is known for developing the 3D transistor, FinFET, that can be scaled beyond 10nm. He also developed the international-standard MOSFET model used by most IC companies since 1997. He has received the IEEE Andrew Grove Award, Solid State Circuits Award, Nishizawa Medal, and UC Berkeley’s highest honor for teaching - the Berkeley Distinguished Teaching Award.Website
Cory Weber received his B.S. from Carnegie Mellon University in 1995 and his M.S. from the University of Illinois at Urbana-Champaign in 1996. In 1996, he joined the TCAD department at Intel Corporation in Hillsboro, Oregon, where he has used simulations help with research and development of Intel’s logic process technology from the 130nm node down to the 10nm node. In 2008 he became manager of the group charged with process and device modeling applications at Intel. His group has been heavily involved in Intel’s transition to multi-gate technology, using process, stress, and device simulations to provide guidance for Intel’s 22nm, 14nm and 10nm technology nodes. He has authored or co-authored over 23 patents and 12 journal articles.
"The expanding role of predictive TCAD in advanced technology development"
TCAD increasingly plays a critical role in advanced technology research and development. The area of impact expanded to not only predicting device outcome from process input, but also in many areas which traditionally are not assited by TCAD. These include (1) future node device architecture selection and early definition of process specs (2) assisting in SPICE model generation (3) material-related modeling (4) variability modeling to guide manufacturing. In order to generate meaningful guidance, TCAD needs to be calibrated to have reasonable predictibility before full devices become available. This requires a rethinking of calibration, which needs to be geared towards targeted applications, with the main goal to increase its predictiveness in that specific application. Examples of this new thinking include use of ab-initio simulations to explore materials beyond these having readily available data, the emphasis of relative change prediction, the design of anchoring experiments, etc.