Invited Speakers

Xiaoyan Liu (Peking University)

Multi-physics simulations for nanoscale CMOS reliability

Andrea Padovani (University of Modena and Reggio Emilia)

Modeling Degradation and Breakdown in SiO2 and High-k Gate Dielectrics

Jeff Wu (TSMC)

Quantum Mechanical Modeling Techniques for High-Performance Low-k Amorphous Material Engineering: a Showcase for aBN

Tomoya Ono (Kobe University)

Calculation of the Green's function in the scattering region for first-principles electron-transport simulations