International Conference on Simulation of Semiconductor Processes and Devices – September 6-8, 2022
The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development results in the field of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano-electronic structures.
The University of Granada is proud to host the conference in year 2022. Details on invited speakers, technical program and social program will be posted here as soon as they are available.
Two satellite workshops will be offered on the day before the main conference starts (Monday, September 5): Modeling and characterization of 2D materials for More than Moore applications and Monte Carlo simulation: Beyond Moore’s Law. There are still available slots for Tutorials or Workshops on September 5 or September 9, please contact us if you are interested in organizing one.
We hope to see you in Granada in September.
Francisco Gámiz – Conference Chair
Cristina Medina – TPC co-Chair
High-quality contributions in the following areas are solicited:
Original 2-page abstracts with illustrations will be accepted for review.
The accepted contributions will be reviewed by the Technical Program Committe and will be published as 4-page letters in a special issue of Solid-State Electronics (Elsevier), named “Letters from SISPAD”. The Committee will also select the best contributions and will invite the authors to extend the abstract to a full paper (7-10 pages) to be published, after a regular review process, to another special issue of Solid-State Electronics (Elsevier).