Skip to Content

Call for papers

15th International Conference on Simulation of Semiconductor

Processes and Devices (SISPAD 2010)

The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an inter-national forum for presentation of the leading-edge research and development results in the area of process and device modeling and simulation. SISPAD 2010 will be organized on September 6-8, 2010 in Bologna, Italy, by the ARCES Research Center of the University of Bologna. The deadline for abstract submission is April 10, 2010. The main themes for original contributions to be submitted to SISPAD 2010 include, but are not limited to the following:

1. Electronic transport in semiconductor materials and devices 

  • Band-structure calculations (DFT and TB models)
  • Transport models: semclassical (BTE, MC, MSB-MC) and quantum transport models (NEGF, Wiegner, ...);
  • Electron and hole mobility enhancement in strained semiconductors;
  • Quasi ballistic transport in fully-depleted SOI FETs, NW-FETs and FinFETs;
  • Tunneling currents across thin insulators. 

2. Device modeling and simulation

  • Semiconductor-based nanoelectronic devices: bulk- and SOI-FETs, DG-FETs, FinFETs, NW-FETs.
  • Semiconductor-based devices for analog applications: BJTs, HEMTs.
  • Carbon-based nanoelectronic devices: CNT-FETs, GNR-FETs.
  • Semiconductor-based power devices: vertical and lateral DMOS FETs; IGBTs.
  • Steep subthreshold-slope devices: Tunnel-FETs, Impact-MOS FETs, Ferroelectric FETs.
  • Non-volatile memories: Floating-Gate NVMs, Charge-Trapping NVMs, Phase-Change NVMs, Magnetic NVMs, Ferroelectric NVMs. 
  • Noise, fluctuations and variability in nanoelectronic devices.
  • Optoelectronic devices: Photodetectors, LEDs, Lasers.
  • Novel concepts and materials: spin electronics, calcogenide switches, .... .
  • Sensors, biosensors, and bioelectronics.

3. Sensors, biosensors, and (bio)-electromechanical systems simulation:

  • Physical sensors;
  • Chemical sensors;
  • Image sensors;
  • Olfactory sensors;
  • Biosensors;
  • Microsystems.

4. Process and equipment modeling and simulation:

  • Continuum and atomistic simulations, including their combinations;
  • Advanced optical, EUV and e-beam lithography, interaction between accurate feature-scale simulation and design; computational lithography;
  • Topography: deposition, etching and planarization processes for conventional and novel materials, e.g. high-k, both on equipment and feature scale; integration bet-ween equipment and feature-scale simulations structure modeling;
  • Doping and oxidation processes: low-energy implats including plasma doping; activation in advanced millisecond annealing; diffusion/activation in alternative S/D/ Channel materials; dopant segregation; stress generation; equipmet-induced variat-ions;
  • Fabrication, performance, variability and reliability of interconnects;
  • Material modeling, including growth and properties of silicides and high-k materials;
  • Integration between process steps with equipment and device simulation
  • Process variability: sources and impact of process variations;
  • Metrology.

5. Compact models

6. Physical-level circuit simulation

7. New algorithms for process and device modeling

 Papers submitted for review must clearly state:

  • The puropose of the work
  • How and to what extent it advances the state-of-the-art 
  • Specific results and their impact

Papers shall only be accepted if submitted electronically in PDF format at the URL http://sispad2010.arces.unibo.it and should include:

1.  Title of the paper
2.  Name, complete mailing address, and email of first author
3.  Names and affiliations of additional authors

The degree to which the paper deals with the above issues is fundamental to a successful review and selection of the paper. The most frequent cause of paper rejection is a lack of new results. Only work that has not been previously published at the time of the confe-rence will be considered. Submission of a paper for review and subsequent acceptance is considered by the committee as a commitment that the work will not be placed in the public domain prior to the conference.

The deadline for abstract submission is April 10, 2010. Authors will be notified of the Technical Program Committee's decision by May 24, 2010.



Theme by Dr. Radut.