SISPAD 2026 Proceedings

• A. Afzalian:
  "DFT-NEGF Modeling of Surface Roughness Scattering in Ultra-Thin-Body Si Nanosheets";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 143 - 146.
  
  
• C. Ahn, A. Schmidt, J. Jeon, S. Lee, W. Choi, J. Jung:
  "SPER-Driven Dislocation Nucleation and Uphill Diffusion Modeling for Semiconductor Processing";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 391 - 394.
  
  
• Z. Aksamija, S. Makumi, A. Belanger:
  "Joule heating and thermal transport in 2D materials for device applications";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 259 - 262.
  
  
• M. Alepidis, T. Bédécarrats, A. Bajolet, B. Dormieu, M. El Dine, P. Scheer, I. Sidibe, B.C. Paz, S. Martinie:
  "Compact model of Intersubband Coulomb scattering for FD-SOI transistors operating at cryogenic temperature";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 167 - 170.
  
  
• H. Asai, S. Iizuka, J. Hattori, T. Ikegami, T. Nakayama, T. Mori:
  "Device-Consistent Simulation of Spin Exchange Interaction in Quantum Dots Using Green's-Function Method for Inhomogeneous Dielectric Environments";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 179 - 182.
  
  
• E. Baba, S. Nakajima, T. Kachi, T. Hara, K. Kinoshita:
  "SPICE Modeling Method of Reverse Recovery Based on TCAD Analysis";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 407 - 410.
  
  
• M. Bahrami, M. R. Davoudi, D. Waldhör, C. Wilhelmer, P. Khakbaz, T. Knobloch, M. Waltl, T. Grasser:
  "Antisite Disorder in the Native Oxide Insulator β-Bi2SeO5: A First-Principles Study";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 219 - 222.
  
  
• P. Baikadi, B. Dunn, J. Meza-Arroyo, S. Ghazvini, J.W.P. Hsu, W. Vandenberghe:
  "Modeling Counterclockwise Current Hysteresis in Oxide Thin-Film Transistors";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 227 - 230.
  
  
• T. Bhowmik, M.G. Monteiro, S. Rao, Y. Xiang, J. Van Houdt, K. Temst, F.G. Redondo, G.S. Kar:
  "Analytical SOT MRAM Modeling: From Deterministic to Fokker-Planck based Stochastic Switching";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 331 - 334.
  
  
• P. Blaise:
  "Atomistic Quantum Transport for the Ångström Era";
  Talk: SISPAD, Kumamoto, Japan (invited); 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 119 - 122.
  
  
• P. Blaise, D. Lemus, M. Townsend, E. Guichard, T. Kubis, J. Weinbub:
  "8Performance Analysis of Silicon GAA-NS-FETs";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 275 - 278.
  
  
• P. Brahma, K. Bhattaram, S. Salahuddin:
  "A Machine-Learning Accelerated Atom-to-Transistor Simulation Framework";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 427 - 430.
  
  
• F.M. Bufler, S. Baudot, S. Yang, P. Matagne, N. Horiguchi, G. Hellings:
  "Monte Carlo Simulation of the Silicon-Channel Thickness Dependence of Nanosheet Performance";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 267 - 270.
  
  
• J.-H. Chen, A. Pampori, C. Hu, S. Salahuddin:
  "A Covariance Matrix Adaptation Evolutionary Strategy Parameter Extractor for BSIM-CMG";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 399 - 402.
  
  
• G. Choi, J. Kim, G. Roh, M. Shin:
  "Neural-Network-Based Effective-Mass Hamiltonian for Quantum Transport Simulations of Disordered Devices";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 135 - 138.
  
  
• W. Choi:
  "From Device Physics to Circuit Co-Design: Multi-Physics Modeling of Monolithic 3D CMOS-NEM Hybrid Circuits";
  Talk: SISPAD, Kumamoto, Japan (invited); 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 39 - 42.
  
  
• Y. Chu, G. Gandus, K. Vuttivorakulchai, M. Vörös, H. Park, M. Jeong, M.A. Pourghaderi, U. Kwon, Y.-S. Kim, S. Lee, W. Choi, J. Jeong:
  "Machine Learning Accelerated Geometry Optimization under External Electric Fields";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 447 - 450.
  
  
• V. Cierra, Y. Kamakura:
  "Modeling of Soft Errors in CFET SRAM Using Machine Learning-Assisted Circuit Simulation";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 207 - 210.
  
  
• S. Dag, E. Bazizi, S. Kengeri, R. Gupta:
  "Atomistic Insights into NH3 Plasma-Induced Carbon Depletion and Nitrogen Incorporation in SiCOH Low-k Dielectrics";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 127 - 130.
  
  
• M. R. Davoudi, D. Waldhör, M. Bahrami, A. Karl, P. Khakbaz, A. Verdianu, M. Waltl, T. Knobloch, T. Grasser:
  "Disentangling Hysteresis in Emerging Transistors: Beyond Threshold Shifts to Area-Based Decomposition";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 231 - 234.
  
  
• L. Donetti, C. Medina-Bailon, J.L. Padilla, C. Sampedro, F. Gamiz:
  "Multi-subband Monte Carlo Simulation of Scaled Forksheet FETs";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 271 - 274.
  
  
• M. Dossena, N. Vetsch, A. Maeder, A. Winka, V. Maillou, D. Lu, A. Ziogas, J. Cao, M. Luisier:
  "Efficient Simulation of Gate Leakage Currents in Ultra-scaled Transistors from First Principles";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 99 - 102.
  
  
• D. Dou, S. Narayanan, Q. Zhao, C. Qin, M. Dunga:
  "AI-driven TCAD Surrogate Modeling and Multi-Objective Optimization for Accelerated Technology Development";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 439 - 442.
  
  
• F. Ducry, A. Afzalian:
  "SCDM-k Wannierization from AO basis sets";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 123 - 126.
  
  
• M. Galvagno, S.D. Mariani, P. Zuliani, S.F. Liotta, S. Cannizzaro, G. Malavena, C. Compagnoni, A.S. Spinelli:
  "Avalanche Breakdown in IGBT Corners with VLD Termination: Quantitative 3D TCAD Investigation";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 295 - 298.
  
  
• S. Gangwal, S. Chen, T. Li, M. Povolotskyi, D. Vasileska:
  "Framework for Investigating Cryogenic Hole Mobility in Group-IV-Alloy Quantum Wells";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 67 - 70.
  
  
• S. Gora, J. Singh, M. Shukla, A. Datta:
  "DFT Modeling of O2-Driven Fragmentation and Islanding from MoS2 Nanoworms";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 323 - 326.
  
  
• J. Gull, H. Kosina:
  "Two-Particle Monte Carlo for TCAD: Fermionic Treatment of Electron-Electron Scattering";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 71 - 74.
  
  
• J. Guo, M. Geng, Z. Liu, D. Qi, D. Ni, D. Gao:
  "Multi-Stage Etch Recipe Inverse Design: Bridging Expert Behavioral Cloning and Reinforcement Learning";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 359 - 362.
  
  
• J. Guo, Z. Liu, M. Geng, K. Song, H. Jiang, D. Ni, D. Gao:
  "Pulsed Bias Etching of Silicon Pillar Arrays: Experiment and Surface-Memory Simulation of Loading Control";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 375 - 378.
  
  
• P. Haslhofer, T. Reiter, A. Toifl, A. Hössinger, L. Filipovic:
  "Geometry-Agnostic Feature-Scale PEALD Model";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 155 - 158.
  
  
• T. Hellemans, D. Verreck, A. Arreghini, G. Van den Bosch, M. Rosmeulen, M. Houssa, J. Van Houdt:
  "Compact Modeling of the Program Saturation Regime in Charge Trap Flash Memories";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 51 - 54.
  
  
• S.-M. Hong, P.-H. Ahn:
  "Quantum Transport Simulation Considering Self-Energy for Surface Roughness in Nanosheet FETs";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 75 - 78.
  
  
• T. Ikeda, H. Kotakemori, S. Nakamura, K. Yashima, T. Ohmura, Y. Kayama, Y. Lee, Y. Tsuji, S. Yi, M. Cha, J.H. Jeong:
  "Twisting in High Aspect Ratio Etching with Charging Effects as a Stochastic Mechanism";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 367 - 370.
  
  
• H. Ishii, T. Shimura, R. Ogata, H. Kitagawa, T. Yamamoto, I. Inoue:
  "Experiment-Based Modeling of Wafer-to-Wafer Bonding for 3D Integration";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 379 - 382.
  
  
• F. Jazaeri, J.-M. Sallese:
  "The EPFL Cryogenic MOSFET Model";
  SISPAD, Kumamoto, Japan (invited); 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 31 - 34.
  
  
• P.L. Julliard, P. Philippopoulos, T. Aladjidi, K. Gruel, E. Nowak, T. Meunier:
  "Fast exchange energy simulation in Si spin qubits for point defect variability assessment";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 183 - 186.
  
  
• C. Jungemann:
  "Harmonic Balance Boltzmann Equation Solver for Gunn Domains";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 107 - 110.
  
  
• H.-J. Kang, T. H. Kim, J. Lee, R.-G. Lee, Y.-H. Kim:
  "Multi-Space Density Functional Simulations of WSe2 p-n Junctions";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 419 - 422.
  
  
• S.W. Kang, Y. Ha, I. Yun, J. Chang:
  "Strain-Dependent Electron Transport in Mono-, Bi-, and Trilayer MoS2 and WS2 Using Coupled First-Principles and Full-Band Semi-Classical Monte-Carlo Simulation";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 95 - 98.
  
  
• M. Khan, A. Wörl, F. Rutz:
  "Unified TCAD Simulation Framework for InGaAs/InP Single-Photon Avalanche Diodes";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 311 - 314.
  
  
• G. Kim, K. Lee, S.-M. Hong:
  "Accelerating Simulation of General Gate-All-Around Transistors via a Quasi-1D Model";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 443 - 446.
  
  
• J. H. Kim, S. Kim, Y. Park, J. Go, J.H. Jung:
  "Multi-Scale Statistical Modeling of Random Telegraph Noise and Read-Noise Distribution in Sub-Micrometer CMOS Image Sensors";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 215 - 218.
  
  
• S.-H. Kim, S. Park, C. Moon, P. Kim, J.S. Kim, J. Lee, Y.-S. Kim, S.H. Song, Y. Park, J.H. Jeong:
  "Impact of Thermal Expansion Mismatch-Induced NMOS Metal Gate Stress on MBCFET Performance";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 203 - 206.
  
  
• Y. Kobayashi, Y. Nakamura, S. Yamaguchi:
  "A TCAD-SPICE Simulation Framework for Quantitative Evaluation of MOSFET Properties from SEM Transient Signals";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 171 - 174.
  
  
• R. Kostal, M. Kleinbichler, S. Di Nicola, L. Filipovic:
  "Surrogate-Assisted Calibration of a DRIE Process Model";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 163 - 166.
  
  
• K. Kovani, G. Chiaravalli, F. Di Stefano, M. Dyrek, S. Kwak, V. Arza, R. Hachiya, Y. Cho, H. Minari, J. Komachi, S. Yamakawa, L. Servadei:
  "A Deep Learning Framework for Fast, Unified Process and Device TCAD Simulation";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 251 - 254.
  
  
• J. Kuo, G. Lee, K. Huang, J. Tzeng, Y.S. Lin, S.H. Li, Y.L. Chang, H.P. Chien, P.-C. Hsu, G. Lin, W.C. Chang, E. Chen, Y.C. Luo, C.C. Lai, Y.Y. Chang, Y.H. Tsai, C. Hsiao, W. Lee, S. Shen, C. Chang, T. Yu, M.H. Hsieh, C. Huang, K.Y. Su, J. Liang, K.W. Su, C.K. Lin:
  "A Novel 2.5D Thermal Coupling Model for Device/Metal Reliability Applications";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 255 - 258.
  
  
• J. Lacord, F. Ponthenier, A. Boutayeb, D. Golanski, S. Joblot:
  "SOI PeDMOS RON-BV-IOFF tradeoff optimization through TCAD simulations";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 303 - 306.
  
  
• D. Lee, S. Youn, Y. Ha, J. Chang:
  "Full-Band Semi-Classical Monte Carlo Simulation of Layer Number-Dependent Hole Transport in W- and Mo-Based Transition Metal Dichalcogenides";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 91 - 94.
  
  
• J. Lee, T. H. Kim, J. Lee, Y.-H. Kim:
  "Low-temperature Enhancement of Quantum Hybridization-induced Negative Differential Resistance in a Pb-free 1D Halide Perovskite";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 415 - 418.
  
  
• K. Lee, M.-S. Jang, S.-M. Hong:
  "Efficient DC Simulation of Monolithic CFETs Using a Quasi-1D Approach";
  Talk: SISPAD, Kumamoto, Japan (invited); 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 191 - 194.
  
  
• R.-G. Lee, J. Lee, Y.-H. Kim:
  "First-Principles Electrostatic Embedding for Dielectric and Capacitance Analysis in Nonequilibrium 2D Devices";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 131 - 134.
  
  
• S. Lee, S. Park, S.H. Song, M. Shin:
  "Three-Dimensional Quantum Transport in Nanosheet FETs: Effects of Contacts, Geometry, and Multi-Stacks";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 59 - 62.
  
  
• U. Lee, J. Kim, J. Chang:
  "Semi-Classical Monte Carlo Simulation of Contact Geometry Effect on Source/Drain Junction Resistance in N-Type Si Fin and Nanosheet FETs";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 339 - 342.
  
  
• H. Leenders, J. Faisst, C. Jungemann:
  "Deterministic Full-Band Boltzmann Equation Solver for 2D Materials";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 83 - 86.
  
  
• D. Lim, K. Kim, H. Shin:
  "Comprehensive SPICE Compact Modeling of Split-Gate Embedded Flash Memory for Transient and Worst-Case Operation Failure Simulation";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 403 - 406.
  
  
• X.-W. Lin, T. Yan, K. Morgan, X. Xu, S. Smidstrup, J. Schneider:
  "From Atom to System: Multi-scale Thermal, Mechanical, and Reliability Modeling of Advanced Packages for AI";
  SISPAD, Kumamoto, Japan (invited); 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 35 - 38.
  
  
• A. Lorin, J. Li:
  "FE-NEGF for Cryogenic Thermal Management";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 351 - 354.
  
  
• A. Lu, M. Raj, H. Y. Wong, I. Rumyantsev, S. Li, H. Takeuchi:
  "Enabling 4F2 DRAM Junctionless Vertical Channel Transistors with Novel Oxygen Inserted Si Substrates - A TCAD Study";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 55 - 58.
  
  
• A. Lu, J. Verbeke, P. Oldiges, R. Arghavani, H. Y. Wong:
  "Self-Heating and Radiation Hardness Studies of 3nm GAA-FET-Based SRAM with Different Substrate Isolation Techniques";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 283 - 286.
  
  
• D. Mai, D. Schulz:
  "Lattice-Based Quantum Phonon Transport in FD-SOI Transistors";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 347 - 350.
  
  
• D. Maitre, F. Guadagnuolo, J. Banon, M. Darnon, R. Clerc, L. Tremas, M. Le Grand, A. Fuchs, P. Urard, C. Gaye, O. Jeannin, J. Downing, D. Rideau:
  "k-space resolved surrogate models for efficient inverse design of optical metasurfaces";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 243 - 246.
  
  
• D. Mamaluy, J. P. Mendez, C. Cariker, M. Titze, A.A. Belianinov:
  "Revealing New Leakage Paths in GAAFETs using Predictive First-Principles Simulations";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 279 - 282.
  
  
• E. Mashhadi, S. Ghazvini, W. Vandenberghe, A. Saadat, H. Edwards, S. Sampath, D. Pham:
  "Double-Gate LDMOS Transistors with Exceptional Figure-of-Merit Exceeding 700 kW/mm2";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 307 - 310.
  
  
• M. Matsubara, E. Bellotti:
  "First-principles calculation of free carrier absorption in 4H-SiC";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 411 - 414.
  
  
• S. Mohanty, V. Thakor, O. Maheshwari, N. R. Mohapatra:
  "Impact of Surface Charging on Feature Profile Evolution in 3D NAND Pillar Etching";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 371 - 374.
  
  
• N. Mori:
  "Bridging Semiconductor Physics and Device Engineering: From Crystal Anisotropy to Efficient Quantum Transport";
  SISPAD, Kumamoto, Japan (invited); 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 27 - 30.
  
  
• S. Moslemi-Tabrizi, P. Schvan, P. Blaise, U Kapoor, D. Lemus, T. Kubis:
  "Low-Temperature Behavior in Silicon Nanowire n-FETs Studied by Atomistic NEGF";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 211 - 214.
  
  
• B. Nallan Chakravartula, Z. Wang, S. Gangwal, K. Raleva, D. Vasileska, M. Povolotskyi:
  "Hot Carriers and Self-Heating Effects in FD-SOI Devices at Cryogenic Temperatures";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 319 - 322.
  
  
• S. Narayanan, Q. Zhao, S. Mayuzumi, D. Dou, C. Qin, M. Dunga:
  "TCAD-Based Word Line Driver Optimization for NAND-type 3D Flash Memory Scaling";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 291 - 294.
  
  
• T. Nguyen, S. Dweik, H. Y. Wong:
  "Simulation of Two-qubit Gate Variability and Fidelity of Spin Qubits Built on Nanosheet Technology";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 187 - 190.
  
  
• R. Nimje, V. S, A. S, A. Mahajan:
  "Modeling and Simulation of Exciton Dynamics in Transition Metal Dichalcogenide Heterostructures";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 327 - 330.
  
  
• T. Ogura, Y. Hizume, Y. Ozeki, T. Kakegawa, H. Takeda, T. Kurusu, T. Oki, K. Sekine:
  "Simulation Study on Scaling Limits of Z-direction Pitch in 3D Flash Memories: Toward the Sub-40 nm Regime";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 43 - 46.
  
  
• H. Oh, P.-H. Ahn, J. Kim, M. Shin:
  "Quasi-Bound State Tunneling in GaN Devices using 2D NEGF with Supercell Mode-Space Method";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 335 - 338.
  
  
• Y. Ohuchi, R. Stella, S. Leroch, L. Filipovic:
  "Atomistic Modeling of Mg-Ion Implantation into GaN using an Efficient Machine-Learned Interatomic Potential";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 239 - 242.
  
  
• A. Pal, L.P. Tatum, N. Yang, R. Gupta, E. Bazizi, S. Kengeri:
  "Impact of 4F2 DRAM Access Transistor Design on Floating Body Effect and Retention";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 195 - 198.
  
  
• J. Park, Y.-H. Kim:
  "Mechanisms of HfSe2 layer-by-layer oxidation and clean van der Waals interface formation with 2D semiconductors: First-principles molecular dynamics simulation study";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 363 - 366.
  
  
• A. Pilotto, D. Lizzit, M. Pala, D. Esseni:
  "Engineering of n-type metal-TMD contacts via ferroelectric polarization: an ab-initio transport study";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 87 - 90.
  
  
• C. Pixius, F. Schulz, S. Chowdhury, M. Ley, E. Bär, C. Straub, A. Rosskopf:
  "Multi-Phase-Field Modeling of Thin-Film Silicidation";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 383 - 386.
  
  
• X. Qin, T. Yang, D. Kong, X. Wan:
  "SEMulator3D Linking Deposition Process to Electrical Metrics-Accelerated WAT Learning";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 387 - 390.
  
  
• T. Reiter, L. Filipovic:
  "GPU-Accelerated Feature-Scale Process Simulation of CFET Structures";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 159 - 162.
  
  
• M. Renner, Y. Chang, T. Linn, J. Knoch, C. Jungemann:
  "Challenges of Drift-Diffusion Simulation for Device Characterization at 4.2 K";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 111 - 114.
  
  
• G. Roh, Y. Lim, M. Shin:
  "Alloy-scattering-limited Hole Mobility in SiGe: First-principles-based Multi-scale Approach";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 63 - 66.
  
  
• I. Rumyantsev, J. Steinfeldt, N. Cody, D. Bailey, J.W. Anderson, S. Li, D. Connelly, J.W. Johnson, E.L. Piner, M. Hytha, R. Mears:
  "Physics-Informed Compact Modeling of Off-State Leakage and Breakdown in GaN-on-Si Devices";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 299 - 302.
  
  
• J. Saint-Martin, M. Ghanem, R. Sen, J. Sjakste, P. Dollfus:
  "Monte Carlo Modeling of Phonon Drag Effects on Thermoelectric Transport in Silicon Nanostructures with doping modulation";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 263 - 266.
  
  
• A. Schmidt, K. Yeom, B. Lee, M. Vörös, H. Kubotera, W. Choi, A. Payet, T. Nishimatsu, H. Koshimoto, Y. Kayama, J. Jeon, S. Lee, J.H. Jeong:
  "Unified Lattice Kinetic Monte Carlo Model for Epitaxy, Etch and Reflow Processes for Advanced Semiconductor Device Architectures";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 147 - 150.
  
  
• K. Seike, S. Sato:
  "Machine Learning Framework for the Inverse Design of Tight-Binding Parameters in Compound Semiconductors";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 423 - 426.
  
  
• M. Shazon, C.-Y. Lin, A. Naeemi:
  "Circuit-to-Micromagnetics Analysis of Read Disturbance in Two-Terminal SOT-MRAM";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 287 - 290.
  
  
• K. Sonoda, S. Tsuda, T. Yamaguchi, A. Amo, E. Tsukuda:
  "Modeling the Memory Window Distribution in FeFETs Considering Grain Variability";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 223 - 226.
  
  
• S. Souma, A. Ueda:
  "Physics-Informed Neural Networks for Stable Drift-Diffusion Simulation and Inverse Parameter Extraction in 2D Semiconductor Devices";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 247 - 250.
  
  
• H. Tang, Y. Wu, J. Hao, X. Zhu, R. Yin, S. Yu:
  "Revisiting Random Dopant Fluctuation at Cryogenic Temperature: the Effect of Incomplete Ionization";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 315 - 318.
  
  
• W. Tang, X. Li, Y. Zhao, X. Zhang, Q. Zhu, J. Guo, L. Wang, L. Li:
  "Vertical Channel-All-Around a-IGZO-FET Towards 2T1D DRAM Design with Self-Boosted Storage-Node Voltage";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 47 - 50.
  
  
• M. Thesberg, J. Gonzalez-Medina, Z. Stanojevic, M. Kampl, F. Schanovsky, O. Baumgartner, M. Karner:
  "A TCAD-Friendly Numerical Treatment of Bandtails in Cryogenic and Amorphous Oxide Semiconductors";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 115 - 118.
  
  
• C. Tung, X. Duan, D. Wu, J. Wang:
  "PrimeSim D2D: A Scalable, Machine Learning-assisted Data-Driven Modeling Framework for Fast DTCO";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 175 - 178.
  
  
• A. Ueda:
  "Interface Modeling for TCAD Simulations of 2D Semiconductor Transistors";
  Talk: SISPAD, Kumamoto, Japan (invited); 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 79 - 82.
  
  
• N. Vansteenvoort, A. Hidalgo, G. Gaddemane, B. Sorée, M.L. Van de Put:
  "Carrier Density Dependent Transport in Monolayer WS2";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 343 - 346.
  
  
• C. Wilhelmer, T. Grasser:
  "First-Principles Evaluation of p-Type Conductivity in Zn-Doped Bismuth Oxyselenide (Bi2O2Se)";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 235 - 238.
  
  
• Y.-W. Xu, Y. Li, M.-H. Chuang, Y. Tai:
  "Power-Performance Assessment of 48 nm Gate-Pitch CFETs Using Experimentally Calibrated Physics-Informed ANN Models";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 435 - 438.
  
  
• H. Yang, S. Zhang, Y. Zhao, L. Li:
  "Physics-Enhanced LSTM Modeling of Electric Double-Layer Transistors";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 431 - 434.
  
  
• N. Yang, P. B. Vyas, R. Gupta, A. Pal, E. Bazizi, S. Kengeri:
  "Multiscale Modeling of Channel Surface Roughness: Impact on Front-End-of-Line And Circuit Performance for Advanced Logic Technology";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 199 - 202.
  
  
• Y. Yook, C. Huang, Y. Gui, M.J. Kushner:
  "Feature Charging During Cryogenic Plasma Etching";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 395 - 398.
  
  
• S. Youn, H. Han, J. Chang:
  "Thickness-Dependent Conductivity Scaling of B20-Type Chiral Topological Semimetals for Beyond-Cu Interconnect Applications";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 139 - 142.
  
  
• C. Yu, S. Schneider, B. Rellinghaus, C. Jungemann:
  "Efficient STEM-EBIC Simulation Using an Adjoint Drift-Diffusion Model";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 103 - 106.
  
  
• W. Zhang, L. Jiao, J. Wang, X. Gong, X. Fong:
  "A Fokker-Planck Approach for Modeling Temperature-Dependent Two-Phase Switching Dynamics in Ferroelectrics";
  Poster: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 355 - 358.
  
  
• Q. Zhao, J. Li, H. Shao, R. Chen, L. Filipovic:
  "A First-Principle Study of F2 Selective Etching of Si/SiGe Stacks towards Sub-3 nm Node Transistor Manufacturing";
  Talk: SISPAD, Kumamoto, Japan; 2026-09-28 - 2026-09-30; in: "Proc. of SISPAD", (2026), 978-4-86348-817-5; 151 - 154.