General Information

The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development results in the field of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano-electronic structures. The conference is held annually in September and the location alternates between the United States, Japan, and Europe.
The topics covered in SISPAD include:

  • Modeling and simulation of all types of semiconductor devices, including FinFETs, GAA FETs, ultra-thin SOI devices, emerging memory devices, new material-based nanodevices, optoelectronic devices, TFTs, sensors, power electronic devices, spintronic devices, tunnel FETs, SETs, organic electronic devices, and bioelectronic devices
  • Modeling and simulation of all sorts of semiconductor processes, including first principles material design, and growth simulation of nano-scale fabrication
  • Fundamental aspects of device modeling and simulation, including quantum transport, thermal transport, fluctuation, noise, and reliability
  • Compact modeling for circuit simulation, including low-power, high frequency, and power electronics applications
  • Process/device/circuit co-simulation in context with system design and verification
  • Equipment, topography, lithography modeling
  • Interconnect modeling, including noise and parasitic effects
  • Numerical methods and algorithms, including grid generation, user-interface, and visualization
  • Metrology for the modeling of semiconductor devices and processes
  • Multiscale approach from First Principles to TCAD simulations
  • Estimation with TCAD and machine learning
  • Neuromorphic devices and quantum computing
  • Multi-physics simulation

Upcoming conference:

The next SISPAD conference will be hosted in Kobe, Japan.


Conference History

In 1996 the first SISPAD conference was held in Tokyo as the successor to three preceding conferences:

  • NUPAD - The International Workshop on Numerical Modeling of Processes and Devices, held in the United States
  • VPAD - The International Workshop on VLSI Process and Device Modeling, held in Japan
  • SISDEP - The International Conference on Simulation of Semiconductor Devices and Processes, held in Europe