General Information

The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development results in the field of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano-electronic structures. The conference is held annually in September and the location alternates between the United States, Japan, and Europe.
The topics covered in SISPAD include:

  • Modeling and simulation of all types of semiconductor devices, including FinFETs, GAA FETs, ultra-thin SOI devices, emerging memory devices, new material-based nanodevices, optoelectronic devices, TFTs, sensors, power electronic devices, spintronic devices, tunnel FETs, SETs, organic electronic devices, and bioelectronic devices
  • Modeling and simulation of all sorts of semiconductor processes, including first principles material design, and growth simulation of nano-scale fabrication
  • Fundamental aspects of device modeling and simulation, including quantum transport, thermal transport, fluctuation, noise, and reliability
  • Compact modeling for circuit simulation, including low-power, high frequency, and power electronics applications
  • Process/device/circuit co-simulation in context with system design and verification
  • Equipment, topography, lithography modeling
  • Interconnect modeling, including noise and parasitic effects
  • Numerical methods and algorithms, including grid generation, user-interface, and visualization
  • Metrology for the modeling of semiconductor devices and processes
  • Multiscale approach from First Principles to TCAD simulations
  • Estimation with TCAD and machine learning
  • Neuromorphic devices and quantum computing
  • Multi-physics simulation

Upcoming conference:

The next SISPAD conference will be held in San Jose, California, USA.


Conference History

In 1996 the first SISPAD conference was held in Tokyo as the successor to three preceding conferences:

  • NUPAD - The International Workshop on Numerical Modeling of Processes and Devices, held in the United States
  • VPAD - The International Workshop on VLSI Process and Device Modeling, held in Japan
  • SISDEP - The International Conference on Simulation of Semiconductor Devices and Processes, held in Europe