SISPAD 2025

SISPAD 2025 Proceedings

A. Abdi, T. Alexewicz, D. Schulz:
"Tight-Binding Analysis of Excitonic States in Low-Dimensional GeSn Heterostructures";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 368 - 371.
A. Afzalian:
"Ab-initio-NEGF Fundamental Roadmap for Carbon-Nanotube and Two-Dimensional-Material MOSFETs at the Scaling and VDD Limit";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 264 - 267.
S. Amoroso, G. Eneman, P. Asenov, M.-H. Ke, N. Rassoul, I. Lee, A. Belmonte, K.-H. Lee, X.-W. Lin, V. Moroz:
"Understanding the Floating-Body Effect Simulation and Optimization in 3D-DRAMs";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 152 - 155.
T. Bhowmik, Y. Xiang, M. Monteiro, S. Rao, F. García-Redondo, J. Van Houdt, K. Temst:
"Modeling SOT-Driven Domain Wall Motion in MTJ Switching";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 124 - 127.
G. Boschetto, C. Wilhelmer, L. Cvitkovich, J. Li, D. Waldhör, T. Grasser, B. Martinez:
"Multi-scale simulation framework for the modelling of charge capture and emission in spin qubit devices";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 132 - 135.
F.M. Bufler, G. Eneman, P. Matagne, N. Horiguchi, G. Hellings:
"On the Channel and Wafer Orientation Dependence in Unstrained and Strained p-Type Nanosheets";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 332 - 335.
J. Cao, N. Vetsch, V. Maillou, A. Winka, A. Maeder, A. Ziogas, M. Luisier:
"Solving the Bethe-Salpeter Equation in the NEGF formalism";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 300 - 303.
C.-Y. Chang, B. Sorée, A. Afzalian:
"Layer and Stacking Effects on Transport Properties in Steep-Slope Cold-Metal-Source FETs";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 260 - 263.
J. Cho, H. Hwang, S. Park, M.-K. Park, J.-H. Lee:
"Modeling and Analysis of Electron Trapping Mechanisms in Al2O3/Si3N4 and Al2O3/Si3N4/SiO2 Charge Trap Devices";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 208 - 211.
G. Choi, M. Shin:
"Efficient Quantum-Mechanics-Based Molecular Dynamics Through Machine Learning-Driven Density Functional Theory Hamiltonian";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 296 - 299.
P. Clemencon, T. Hirtzlin, F. Rummens, T. Dalgaty, E. Hardy, M. Ezzadeen, J. Minguet Lopez, O. Billoint, L. Grenouillet, L. Hutin, D. Querlioz, E. Vianello:
"Resistive memories: multifaced impact on neuromorphic computing";
SISPAD, Grenoble, France (invited); 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 52 - 55.
E. Deylgat, B. Sorée, W. Vandenberghe:
"Quantum limit of the contact resistance to low-dimensional materials";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 224 - 227.
N. Dhungana, G. Freychet, T. Dewolf, M. Knebel, P. Gergaud:
"Cuboid-Based Novel Simulation for Enhanced Roughness Metrology";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 356 - 359.
A. Dixit, N. Bagga, S. Kumar, N. Kumar, Y. Gao, O. Badami, J. Lee, C. Medina-Bailon, L. F. Aguinsky, V. Georgiev:
"A Comprehensive Assessment of Scattering and Ballistic Effects on Sub-3nm Nanosheet FET: A Quantum Transport Simulation";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 424 - 427.
L. Donetti, C. Medina-Bailon, J.L. Padilla, C. Sampedro, F. Gamiz:
"A novel 3D Multi-Subband Monte Carlo approach including material-dependent non-parabolic effects";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 336 - 339.
G. Elbaz, P.L. Julliard, M. Casse, H. Niebojewski, B. Bertrand, G. Roussely, V. Labracherie, M. Vinet, B. Paz, T. Meunier:
"Transport characterization and quantum dot coupling in commercial 22FDX";
SISPAD, Grenoble, France (invited); 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 56 - 59.
L. Filipovic:
"From Atoms to Reactors: Multi-Scale Modeling for Semiconductor Fabrication (invited)";
Talk: SISPAD, Grenoble, France (invited); 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 304 - 307.
Y. Fu, H. Shao, L. Xia, R. Ge, G. Bai, X. He, J. Li, R. Chen, Y. Wei, L. Li, L. Filipovic:
"Atomic-Level Monte Carlo Modeling of SiN Deposition by PECVD";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 320 - 323.
M. Galvagno, L. Zullino, S. Mariani, P. Zuliani, S.F. Liotta, S. Cannizzaro, G. Malavena, C. Compagnoni, A.S. Spinelli:
"3D Wide-Area TCAD Approach to Address Avalanche Breakdown in IGBT Edge Termination";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 188 - 191.
S. Gangwal, D. Vasileska, M. Povolotskyi:
"Modeling Electrostatics and Hole Transport in (Si)GeSn Heterostructures";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 380 - 383.
R. Ghosh, A. Provias, A. Karl, R.R. Chaudhuri, D. Waldhör, T. Knobloch, C. Wilhelmer, T. Grasser:
"Unveiling Fast Interface Trap Dynamics in Monolayer MoS2 FETs";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 204 - 207.
J. Gonzalez-Medina, L. Hung, Y. He, A. Arsalane, O. Baumgartner, T. Mikolajick, J. Trommer, C. Mukherjee, M. Karner:
"TCAD Analysis on the Geometry Effects in Three-Independent-Gates Reconfigurable FETs";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 128 - 131.
D. Green, T. Jokinen, S. Carapezzi:
"Artificial Intelligence Driven Optimization of 1200V SiC DMOS";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 184 - 187.
E. Guichard, J. Weinbub, J. Cho, B. Tudor, C. Caillat, S. Chourou, T. Jokinen, S. Veitzer, S. Carapezzi, P. Blaise, D. Kimpton, A. Hössinger, M. Townsend:
"Driving Four Decades of TCAD Innovation: From Physical Simulation to AI-Powered Digital Twins (invited)";
Talk: SISPAD, Grenoble, France (invited); 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 100 - 103.
J. Gull, L. Filipovic, H. Kosina:
"Accurate Carrier Dynamics for a Kane Dispersion Relation";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 96 - 99.
Z. Guo, G. Ma, E. Xu, P. Chang:
"Assessment of the Charge Trapping Behaviors in Ferroelectric Field-Effect Transistor Based Ternary Content Addressable Memory";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 432 - 435.
T. Hatakeyama, H. Hirai, M. Sometani, D. Okamoto, M. Okamoto, S. Harada:
"TCAD-Oriented Physical Modeling of Temperature-Dependent Inversion Layer Mobility in SiC MOSFETs";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 404 - 407.
R. Helleboid, S. Dahan, K. Morel-Handa, G. Mugny, I. Nicholson, D. Rideau, M. Pala, P. Dollfus, J. Saint-Martin:
"Improved stochastic SPAD quenching model including build-up field effect";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 172 - 175.
T. Hellemans, D. Verreck, A. Arreghini, G. Van den Bosch, M. Rosmeulen, M. Houssa, J. Van Houdt:
"Modeling Carrier In- and Ejection for Charge Trap Flash Memory: Insights from Engineered SON(ON)OS Vehicles";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 360 - 363.
X. Hong, S. Wang, Y. Su, X. Su, B. Ma, Z. Liu, X. Ling, Y. Wang, P. Ren, Y. Jiang, Z. Chen, T. Chen, Y. Wei:
"Context-OPCGAN: Context-Aware OPC Modeling with Generative Adversarial Networks";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 372 - 375.
H. Houmsi, B. Sklénard, F. Triozon, M Guillaumont, J. Li:
"Anisotropic electron polaron mobility in V2O5: from ab initio to Kinetic Monte Carlo";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 248 - 251.
Z. Hu, J. Li, H. Shao, R. Chen, L. Filipovic, L. Li:
"Physics-Informed Bayesian Optimization Framework for Etching Rate and Surface Roughness Co-optimization";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 384 - 387.
M.-S. Jang, S. Jung, S.-M. Hong:
"Stress Simulation of CFET Inverters with Unmerged SiGe S/D and Wrap-Around Contact";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 388 - 391.
J. Jung, A. Schmidt, B. Lee, W. Choi, J. Jeon, S. Lee, D. S. Kim:
"Full device scale atomistic kinetic lattice Monte-Carlo simulation of metal-induced lateral crystallization process";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 312 - 315.
M. Kanzawa, M. Miura-Mattausch, K. Johguchi:
"Compact Modeling of GAA-FET Applicable down for TSi=5nm Generation";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 352 - 355.
E. Kao, C. Jungemann, M. Houssa, S. Tyaginov:
"Deterministic Boltzmann Transport Equation Solver: Validation and Heat Generation Modeling";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 212 - 215.
B. Kim, U. Kwon, W.I. Choi, H. Kwon, D. S. Kim:
"Carrier Energy-Dependent Capture Model for Improved CTF TCAD Simulations";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 340 - 343.
H. Kim, D. Song, J. Oh, S.H. Jin, Y. Kim, Y. Lee, H. Kwon, S. Kim, S. Lee, S. Park, W. Choi, D. S. Kim:
"Modeling of PMOS Off-State Stress by introducing an energy resonant cross-section into the energy-driven hot carrier degradation model";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 196 - 199.
Y. Kim, M.-C. Park, S. Kim, U. Chae, B. Shin, S. Kwon, S. Kim, Y.-S. Kim, J.-H. Kang, Y.-G. Kim, J.-W. Jeon, D. S. Kim:
"From CMP Surface Prediction to Defect Detection: An AI-Driven Virtual Metrology-TCAD Framework";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 316 - 319.
R. Kostal, T. Reiter, L. Filipovic:
"A New Module for Automated Optimization of Process TCAD Model Parameters";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 108 - 111.
H. Kubotera, C. Ahn, A. Schmidt, G. Yoo, B. Lee, M. Vörös, W. Choi, A. Payet, D. S. Kim:
"High-Fidelity and Efficient Epitaxial Growth Simulations via Hybrid Meshing and BVH-based Ray Tracing";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 308 - 311.
N. Kumar, A. Dixit, P. Kumar, N. Bagga, S.R. Panda, O. Badami, J. Lee, C. Medina-Bailon, L. F. Aguinsky, V. Georgiev:
"Dual-Mode Reconfigurable Core-Shell Nanowire Feedback FET with Tunable Logic-Memory Windows: Proposal and Performance Optimization";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 420 - 423.
N. Kumar, N.G. Pruiti, J. Januszewicz, E. Di Gaetano, L. F. Aguinsky, M. Sorel, D. Paul, K. Gallacher, V. Georgiev:
"Quantifying Variability in Silicon Photonics: A Stochastic Study of Sidewall Roughness and Its Impact on Waveguide Performance";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 416 - 419.
Y.-C. Kuo, H. Yu, N. de Almeida Braga, J. Fang, A. Gupta, S. Yadav, A. Alian, U. Peralagu, N. Collaert:
"Modeling of hole generation process in AlGaN/GaN HEMTs";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 192 - 195.
H. Kwon, K. Kim, S. Jin, Y. Lee, S. Kim, H.J. Kim, D. Seo, H. Choi, D. S. Kim:
"Composition Effect of Tunneling and Charge Trap Layer for Enhanced Cycle Retention in VNAND Flash Memory";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 200 - 203.
D. Lee, S.W. Kang, L.F. Register, S.K. Banerjee, J. Chang:
"Efficient and Accurate Full Band Semi-Classical Monte-Carlo Transport Simulation Using Smearing Method and Marching Tetrahedra Algorithm";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 216 - 219.
J. Lee, J. Kim, Y.C. Kim, W. Cho, H. Nah, S. Lee:
"Investigation of Reverse Recovery Failure Mechanism in SJ MOSFET with Increasing Rg";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 428 - 431.
O. Loison, A. M`foukh, M. Pala, P. Dollfus:
"Multi-band model Hamiltonian for tunnel devices with van der Waals heterojunctions";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 272 - 275.
A. Lu, R. Arghavani, H. Y. Wong:
"Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 348 - 351.
M. Luisier, N. Vetsch, A. Maeder, V. Maillou, A. Winka, L. Deuschle, C.H. Xia, M. Kaniselvan, M. Mladenovic, J. Cao, A. Ziogas:
"Acceleration of atomistic NEGF: algorithms, parallelization, and machine learning";
Talk: SISPAD, Grenoble, France (invited); 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 288 - 291.
O. Maheshwari, N. R. Mohapatra:
"Process-Performance Variability Modeling of Inner Spacer Etch in GAA FETs";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 76 - 79.
D. Maitre, D. Rideau, O. Jeannin, C. Jamin-Mornet, C. Leblanc, M. Darnon, R. Clerc, J. Banon, C. Gaye, F. Omeis, L. Fernandez-Mouron, L. Tremas, M. Le Grand, A. Fuchs, P. Urard, J. Downing, B. Rae:
"Inverse design of optical metasurface for CMOS imagers: a multi-objective optimization approach";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 72 - 75.
J.-R. Manouvrier, D. Rideau, G. Gouget, M. Al-Rawhani, E. Lacombe, I. Nicholson, M. Basset, B. Mamdy, R.-A. Bianchi, S. Pellegrini:
"Statistical SPAD Compact Model Dedicated to Pixel Transients Simulations";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 160 - 163.
O. Marcelot, D. Lambert:
"Integration of Monte-Carlo particle transport Simulations Into a TCAD Workflow";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 324 - 327.
A.G. Mauri, M. Vezzoli, S. Baggi, D. Refaldi, A.S. Spinelli, C. Compagnoni, L. Chiavarone:
"Data science statistical approach to percolative conduction in poly-Si based 3D NAND channels";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 148 - 151.
C. Mercier, J.-F. Robillard, E. Dubois, O. Cueto, B. Reig, S. Monfray, A. Fleury:
"Phase-Field Simulations for RF Switches: Highlighting the Benefits of GeTe over GST";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 396 - 399.
M. Mohseni, E. Leroux, L. Bai, R. Cousin, G. Pichon, R. Tanov:
"Virtual Twins for Semiconductor Design and Manufacturing Processes";
SISPAD, Grenoble, France (invited); 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 48 - 51.
P. Mu, T. Cui, L. Zeng, X. Feng, K. Luo, Z. Li:
"Discretization Methods for Quantum Drift-Diﬀusion Model: A Comparison Based on the Quasi-Fermi Scheme";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 392 - 395.
G. Mugny, D. Rideau, J. Grebot, J. Tillemont, I. Nicholson, W. Letka, P. Fonteneau:
"Physical-based model for the optical simulation of III-V photodiodes";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 168 - 171.
S. Nakamura, H. Kotakemori, K. Yashima, T. Ikeda, T. Ohmura, Y. Kayama, Y. Lee, G. Yoo, Y. Tsuji, S. Yi, J. Jeong, D. S. Kim:
"Purge Effect Simulation of Atomic Layer Deposition for High Aspect Ratio Structure";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 228 - 231.
E. Nam, T. Okagaki, J. Chang, Y. Song, S. Song, D. Shin, Y. Lu, H. Park, Y. Park, D. S. Kim:
"Performance Evaluation of Low Temperature Source/Drain Epitaxy Process Targeting Contact Resistance Scaling for Advanced Gate-All-Around Technology";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 112 - 115.
I. Nicholson, G. Mugny, R. Helleboid, B. Mamdy, D. Golanski, S. Place, P. Maciazek, D. Rideau:
"Hole-Induced Avalanche and its Role in Dark Current in SPADs";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 164 - 167.
Y. Ohuchi, R. Stella, L. Filipovic:
"Development of a Gaussian Approximation Potential for GaN with Point Defects and Mg Impurities";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 180 - 183.
M. Pech, J. Neu, D. Schulz:
"Analysis of Transient Quantum Transport in Nanoscale Devices Using Density Matrix Methods";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 220 - 223.
L. Peddaboina, P. Kumar, O. Badami, S. Bhattacharjee:
"A Kinetic Monte Carlo Model for Stochastic Switching in Monolayer MoS2 RRAMs";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 436 - 439.
P. Philippopoulos, F. Beaudoin, P. Galy:
"Simulating two-qubit gates under the influence of charge defects in an FD-SOI device";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 136 - 139.
A. Pilotto, D. Lizzit, M. Pala, D. Esseni:
"Ab-initio transport study of Source-to-Channel Resistance in Metal-MoS2 Top Contacts including Image Force Barrier Lowering in a Heterogeneous Dielectric Environment";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 268 - 271.
S. Raghvendra, V. Moroz, R. Borges, V.K. Dasarapu, S. Smidstrup, U.G. Vej-Hansen:
"Advances in Power Electronics Design Fueled by Hyperconvergence";
Talk: SISPAD, Grenoble, France (invited); 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 176 - 179.
T. Reiter, A. Toifl, A. Hössinger, L. Filipovic:
"Simulation of a Polymer-Free DRIE Process Using SF6/O2 Plasma Etching";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 236 - 239.
M. Renner, T. Linn, C. Jungemann:
"Stabilization of the Drift-Diﬀusion Model for Arbitrary Carrier Statistics";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 84 - 87.
O. D. Restrepo, S. Ludvik, J. Lestage, O.H. Gonzalez, W. Taylor, P. Srinivasan:
"Thermal Resistance Decomposition of Packaging Solutions in Advanced CMOS Nodes";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 276 - 279.
A. Rosskopf, X. Cheng, C. Straub, D. Tenbrinck:
"Scientific Machine Learning (SciML) - How the fusion of AI and physics is giving rise to promising simulation methodologies";
Talk: SISPAD, Grenoble, France (invited); 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 60 - 63.
M. Sengoku, S. Kanie:
"Multiscale Modeling of High-Field Transport in 4H-SiC: A Novel Avalanche Generation Model Based on Full Band Monte Carlo Simulation";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 244 - 247.
D. Shin, J.H. Choi, T. Okagaki, J. Chang, E. Nam, Y. Park, J. Kim, H. Fukutome, H. Song, S. Park, K.H. Cho, S. Lee, D. S. Kim:
"Device-to-Package Level Thermal Risk Analysis of the Back-Side Power Delivery Network";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 280 - 283.
J. Singh, S. Gora, A. Datta:
"Isoelectronic Doping in Tin Oxide by Ge Leading to Mobility Increase of Hole and Electron: Experiments and DFT Simulation";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 408 - 411.
N. Smoliak, N. Kumar, P. Parreira, C. Macdonald, V. Georgiev:
"A Hybrid Machine Learning and Analytical Model of BioFETs for the Detection of Peptides";
Talk: SISPAD, Grenoble, France (invited); 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 116 - 119.
E. Song, J. H. Kim, K. Lee, J. Yoon, S. Kim, D. Shin, S. Hong, S. Kim, Y. Park, D. S. Kim:
"Modeling and investigation of auto focus disparity sensitivity for CMOS image sensors with sub-micrometer scale pixel size";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 120 - 123.
S. Souma:
"Quantum Algorithms for Simulating Quantum Transport via the Time-Dependent Open-System Schrödinger Equation";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 140 - 143.
Z. Stanojevic, F. Schanovsky, G. Rzepa, X. Klemenschits, H. Demel, O. Baumgartner, C. Kernstock, M. Karner:
"Is there anything left to do in TCAD?";
Talk: SISPAD, Grenoble, France (invited); 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 80 - 83.
R. Stella, S. Leroch, T. Reiter, A. Hössinger, L. Filipovic:
"Physics-Based Multi-Scale Modeling of Angled Reactive Ion Etching";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 232 - 235.
C. Straub, S. Mundinar, J. Klonnek, C. Pixius, A. Rosskopf:
"Modeling Nickel-Silicidation using Physics-Informed Machine Learning";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 68 - 71.
S. Subhechha, H. Tang, G. Arutchelvan, G. Eneman, B.Y.V. Ramana, M.J. van Setten, Y. Wan, N. Rassoul, A. Belmonte, G.S. Kar:
"Device process and architecture aware physical TCAD model for ultra-thin film a-IGZO transistors";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 364 - 367.
M. Tewari, A.K. Amaram, T.K. Agarwal:
"Atomistic-to-Continuum Simulation of Au-MoS2-Au Atomristor via Coupled MD-FEM Framework";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 412 - 415.
A. Thayil, L. Ermoneit, M. Kantner:
"Epitaxial Profile Optimization for Deterministic Valley Splitting Enhancement in Si/SiGe Spin-Qubits";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 328 - 331.
M. Thesberg, Z. Stanojevic, F. Schanovsky, J. Gonzalez-Medina, G. Rzepa, F. Mitterbauer, O. Baumgartner, M. Karner:
"An Effective-Medium TCAD Model of Amorphous In-Ga-Zn-O (a-IGZO) Suitable For Large-Area Devices";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 92 - 95.
N. Vansteenvoort, G. Gaddemane, B. Sorée, M.L. Van de Put:
"Analyzing full band transport in 2D TMDs using the Monte Carlo method";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 252 - 255.
A. Varghese, B. Rajendran:
"Modelling the Impact of Lateral Electrode Offset in Vertical Memristors for Neuromorphic Applications";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 376 - 378.
U.G. Vej-Hansen, K. Galiano, N. de Almeida Braga, T. Riccobono, T. Knight, R. Borges:
"Predictive Nanoscale Simulations for THz Regime";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 88 - 91.
D. Verreck, S. Rachidi, G. Van den Bosch, M. Rosmeulen:
"Airgap-induced Field Enhancement to Improve Memory Operation in 3-D NAND Flash Memory";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 144 - 147.
P. B. Vyas, L.P. Tatum, N. Yang, A. Pal, N. Breil, B. Colombeau, E. Bazizi:
"Novel Block-Level DTCO Solution for Advanced Logic Technology Path-Finding";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 104 - 107.
H. Wehbe-Alause, A. Tournier, O. Jeannin, V. Serradeil, H. Mohamad, L. Dilhan, E.G. Carnemolla, M. Fissore, G. Mugny, D. Rideau, F. Bardonnet, A. Crocherie, F. Omeis, S. Villenave, E.L. Perez, B. Vianne, A. Arnaud, P. Urard, M. Le Grand, L. Tremas, D. Maitre, I. Nicholson, P. Fonteneau, F. Guyader, R.-A. Bianchi, J. Downing, B. Rae:
"Advanced Optoelectronic Technologies: Device Optimization and Securing Production with Predictive Simulation Toolchains";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 156 - 159.
C.H. Xia, M. Kaniselvan, M. Mladenovic, M. Luisier:
"Machine-Learned Hamiltonians for Quantum Transport Simulation of Valence Change Memory";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 292 - 295.
Y. Xiao, H. Yang, J. Li, C. Ye, N. Tang, Y. Wang, Z. Zhou, X. Liu, J. Kang, P. Huang:
"A Physics-Based Program-Retention Joint Model of Charge-Trap Transistor";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 344 - 347.
S. Youn, D. Lee, J. Chang:
"Full Band Semi-Classical Monte-Carlo Simulation of Layer Number-Dependent Electron Transport in MoS2 and InSe";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 256 - 259.
C.-H. Yu, J. Liang, G. Lee, C. Lee, W. Luo, K.-Y. Su, K. Su, K. Cheng, C.-K. Lin:
"A Novel CNN-Based BEOL Contour Modeling Solution for Parasitic R/C Extraction";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 64 - 67.
N. Yu, J. Kim, H. Lee, M. Yeom, D. Son, W. Jeon, H. Nah, S. Lee:
"Integrated TCAD Methodology for Simulating Ion Implantation and Device Isolation in GaN ICs";
Poster: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 400 - 403.
Y. Zhai, J. Li, R. Chen, L. Li:
"Modeling on Tilting and Twisting Distortions of 3D NAND High-Aspect-Ratio Etching";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 240 - 243.
H. Zhou, H. Wang, Z. Wang, Z. Sun, R. Wang, L. Zeng:
"Self-Heating Coupled Hot Carrier Degradation in Stacked GAA FETs Based on Full Quantum Simulation Framework";
Talk: SISPAD, Grenoble, France; 2025-09-24 - 2025-09-26; in: "Proc. of SISPAD", (2025), 284 - 287.