SISPAD 2024 Proceedings
- C. Ahn, J. Jeon, S. Lee, W. Choi, D. S. Kim, N. Cowern:
"Generalization of Fick's Law and Derivation of Interface Segregation Parameters Using Microscopic Atomic Movements";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - C. Ahn, K. Yeom, A. Schmidt, Y. Nishizawa, A. Payet, S. Jin, Y. Kayama, W. Choi, D. S. Kim:
"A Self-Consistent Tiling Method for Chip-Scale Stress Simulation";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - J. Ahn, S. Satapathy, J. Kulkarni:
"Optimization of Complementary Reconfigurable Field-Effect Transistor for Improved Circuit-Level Metrics";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - P.-H. Ahn, S.-M. Hong:
"AC Quantum Transport Simulation Including Electron-Phonon Scattering";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - P. Aleksandrov, P. Acharya, V. Georgiev:
"Diffusion-Based Machine Learning Method for Accelerating Quantum Transport Simulations in Nanowire Transistors";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - P. Baikadi, R. Kim, P.D. Reyntjens, A. Penumatcha, M.L. Van de Put, W. Vandenberghe:
"Towards Low Contact Resistance Metal Transition-Metal Dichalcogenide Contacts - A Quantum Transport Study";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - B. Bamer, S. Leroch, A. Hössinger, L. Filipovic:
"Cluster-Based Semi-Empirical Model for Dopant Activation in Silicon Carbide";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - A. Boujnah, O. Cueto, M. Jaud, S. Martinie, F. Nallet, C. Fenouillet-Beranger, O. Rozeau:
"DTCO of advanced FDSOI CMOS technology by process emulation";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - M. Brahma, M.L. Van de Put, E. Chen, M.V. Fischetti, W. Vandenberghe:
"Contact Resistance in Monolayer MoS2 Edge-Contacts: "Electrostatic" vs. Substitutional Doping";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - P. Chatterjee, K. Thakor, S. Mahapatra:
"A TCAD to SPICE Simulation Framework for Analysis of Device to Circuit BTI and HCD Aging";
Talk: SISPAD, San Jose, CA, USA (invited); 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - W. Choi, H. Noh, H. Park, A.-T. Pham, S. Jin, B. Lee, C. Ahn, H. Kubotera, D. S. Kim:
"Hierarchical Simulation of Monolithic CFETs Using Atomistic and Continuum Models";
Talk: SISPAD, San Jose, CA, USA (invited); 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - Y. Choi, S. Myung, K. Kim, G. Kang, B. Jung, Y. Jeon, K. Yeom, S. Han, J. Jeong, D. S. Kim:
"Real Time TCAD Calibration via Transfer Learning";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - K. Chou, Y. Li:
"First Simulation of the Effects of Metal Sidewall Source/Drain and Channel Number on the Output Characteristics of Current Mirror Formed by Vertically Stacked GAA Si NS MOSFETs";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - M.-H. Chuang, S. R. Kola, Y. Li:
"Characteristic Variability of GAA Si NS CFETs Induced by Process Variation Effect and Intrinsic Parameter Fluctuation";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - C. Dam Vedel, V. Georgiev:
"Atomistic Simulations of the Impact of Rotational Twin Planes Defects on the Optical Properties of InP Systems";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - T. Dutta, F. Adamu-Lema, N. Xeni, A. Rezaei, A. Dixit, I. Topaloglu, V. Georgiev, A. Asenov:
"Predictive Simulation of Nanosheet Transistors Including the Impact of Access Resistance";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - L. Filipovic, T. Reiter, J. Piso, R. Kostal:
"Equipment-Informed Machine Learning-Assisted Feature-Scale Plasma Etching Model";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - C. Finnan, L. Tatum, T. Liu:
"Advanced Ferroelectric Modeling for BEOL Negative Capacitance Nanoelectromechanical Switches";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - N. Gandhi, S. Rathore, R. K. Jaisawal, P. N. Kondekar, N. Kumar, A. Dixit, V. Georgiev, N. Bagga:
"Revealing the Noise Dependent Sensitivity of a Junctionless FinFET-Based Hydrogen Sensor with Ferroelectric Gate Stack";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - A. Gentles, M. Dehghani, R. Minixhofer, P. Khakbaz, D. Waldhör, M. Waltl:
"Modeling Next Generation Sensor Chips: Towards Predictive Band Structure Models for Quarternary III-V Semiconductor Alloys";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - S. Ghosh, M. Miura-Mattausch, H. Kikuchihara, T. Iizuka, S. Chaudhry, Y. Sahara:
"Modeling of SOI-MOSFET with Trap-Rich Substrate for RF Circuit Design";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - N. Govindugari, H. Y. Wong:
"Study of Using Variational Quantum Linear Solver for Solving Poisson Equation";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - J. Gull, L. Filipovic, H. Kosina:
"Electron-Electron Scattering in Non-Parabolic Transport Models";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - S. Han, D. Seo, J. Cha, S. Kim, M. Shin:
"Cation Disorder Limited IGZO Mobility Calculation Based on the Density Functional Theory";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - Y. Hayashi, S. Souma:
"Simulation of Qubits Confined in Pseudo Magnetic Field Generated by Strained Graphene Nanoribbon";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - T. Hellemans, D. Verreck, A. Arreghini, G. Van den Bosch, M. Rosmeulen, M. Houssa, J. Van Houdt:
"Modeling the Operation of Charge Trap Flash Memory: A Monte Carlo Approach to Carrier Distribution and (De)trapping";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - Z. Hu, L. Filipovic, J. Li, L. Wang, Z. Wu, R. Chen, Y. Wei, L. Li:
"Modeling Non-Uniformity During Two-Step Dry Etching of Si/SiGe Stacks for Gate-All-Around FETs";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - L. Hung, G. Rzepa, M. Kampl, C. Tsai, F. Schanovsky, O. Baumgartner, Z. Stanojevic, M. Karner:
"Hierarchical Transport Modeling for Path-Finding DTCO";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - H. Jacquinot, E. Pluchart, F. Rothan, S. Martinie, T. Wakaoka, R. Kasai, S. Hidaka, F. Voiron, C. Laviron, Y. Moursy:
"3D Electromagnetic Simulation and Modeling for DTCO of Decoupling High-Density Capacitor in Silicon Interposer for HPC Applications";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - K. Jana, S. Liu, K. Toprasertpong, Q. Jiang, S. Wahid, J. Kang, J. Chen, E. Pop, W. Wong:
"Modeling and Understanding Threshold Voltage and Subthreshold Swing in Ultrathin Channel Oxide Semiconductor Transistors";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - J. Jung, G. Yoo, A. Schmidt, W. Song, H. Kubotera, M. Raju, B. Lee, W. Choi, A. Payet, H. Koshimoto, Y. Kayama, B. Kim, C. Lee, J. Koo, J. Jeon, S. Lee, D. S. Kim:
"Atomistic Multiscale Simulation-Based Extraction of Design Margins in Advanced Transistor Architectures";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - S. Jung, I. K. Kim, K. Lee, S.-M. Hong:
"Process Emulation and Device Simulation of Monolithic CFET Inverter and Transmission Gate with Split-Gate Structure";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - J. H. Kim, S. Kim, H. Park, G. Kang, S. Ko, J. Yoon, W. Lee, Y. Park, J. Go, H.C. Kim, D. S. Kim:
"Atomistic analysis on random telegraph noise of SF transistors in sub-micrometer CIS pixels";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - K. Kim, S. Myung, Y. Choi, G. Kang, K. Yeom, S. Han, J. Jeong, D. S. Kim:
"Neural Drift-Diffusion Model Based on Operator Learning in Fourier Space";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - A. Kumar, R. Tiwari, H. Rai, R. Saikia, A. Bisht, S. Mahapatra:
"Modeling of Trap Generation in 3-D NAND Charge Trap Flash Memory";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - N. Kumar, C. P. Garcia, A. Dixit, V. Georgiev:
"Understanding the dynamic perturbative behaviour of Electrolyte-Gated FET based Biosensors with Immobilised Nanoparticles";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - R.-G. Lee, J. Song, Y.-H. Kim:
"First-principles study of the origins of random telegraph noise in MoS2/hBN-based field-effect transistors";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - S. Leroch, R. Stella, A. Hössinger, L. Filipovic:
"MD Simulation of Epitaxial Recrystallization and Defect Structure of Al-Implanted 4H-SiC";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - K. Lin, S. Amoroso, P. Chen, Y. Tseng, A. Brown, P. Asenov, U.G. Vej-Hansen, X.-W. Lin, A. Blom, V. Moroz, C. Wang:
"A Multiscale Simulation Approach for Program Noise and Cross-temperature Effects in 3D NANDs";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - K. Liu, T. Gunst, K.-H. Lee, A. Blom, X.-W. Lin:
"Memory Window and Variability Modeling of Multi- Domain Al:HfO2 Ferroelectric NAND Memory";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - A. Lu, H. Y. Wong:
"Rapid Simulation Framework for Superconducting Qubit Readout System Inverse Design and Optimization";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - P. Maciazek, I. Nicholson, J.-R. Manouvrier, D. Rideau, F. Kaklin, E. Lacombe, M. Al-Rawhani, C. Bu, S. Pellegrini, V. Georgiev:
"Automated Algorithmic Parameter Extraction of TCAD-Based SPAD SPICE Models";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - B. Magyari-Koepe, J. Wu:
"Advances in Modeling of Interconnect Materials";
Talk: SISPAD, San Jose, CA, USA (invited); 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - T. Markussen, P.A. Khomyakov, B. Verstichel, A. Blom, R. Faber:
"Band Alignment in GAA Nanosheet Structures from Density Dependent Hybrid Functional and Many-Body GW Methods";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - L. Melican, H. Hsiao, D. Lemus, T. Kubis:
"Mode space in DFTB quantum transport in the nanodevice simulation tool NEMO5";
Talk: SISPAD, San Jose, CA, USA (invited); 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - P. Mu, T. Cui, L. Xu, K. Luo, Z. Li, Z. Wu:
"A Finite Element Framework for Solving the Density-Gradient Model";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - L. Nguyen, A. Lu, H. Y. Wong:
"TCAD Structure Input File Generation Using Large Language Model";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - Y. Ogawa, H. Suzuki, M. Miyata:
"Identification of key atomic process of Metal-induced lateral crystallization from First-principles Calculations";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - T. Oh, H. Nam, C. Park, H. Cho:
"FuncAnoDe: A Function Level Anomaly Detection in Device Simulation";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - S. Park, D. Shin, J. H. Kim, Y. Park, D.S. Kim:
"Chip Reliability Improvement by Designing Re-Distribution Layer (RDL) Pattern for Thermal Cycle in Wafer Level Packages (WLP)";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - M. Pech, A. Abdi, D. Schulz:
"Density Matrix Based Transport in Heterostructure Devices Utilizing Tight-Binding Approaches";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - M. Pech, D. Schulz:
"Switching Behavior of Graphene Nanoribbon FETs";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - A.-T. Pham, M.A. Pourghaderi, S. Jin, S. Song, Y. Park, U. Kwon, W. Choi, D.S. Kim:
"Tunneling quantum correction potential model for drift-diffusion simulations of Schottky contact resistance";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - B. Pruckner, N. Jorstad, M. Bendra, T. Hádámek, W Goes, Siegfried Selberherr, V. Sverdlov:
"Simulation of Advanced MRAM Devices for sub-ns Switching";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - Y. Qing, J. Zhao, V. De Smedt, J. Prinzie:
"Cryogenic Modeling of 22nm FDSOI MOSFET";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - K. Rajput, R.-G. Lee, T. H. Kim, H. Yeo, J. Lee, Y.-H. Kim:
"First-Principles Calculations of Non-Equilibrium Energetics and Polarization Switching in Oxide Ferroelectric Tunnel";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - T. Reiter, A. Toifl, S. Kong, A. Hössinger, L. Filipovic:
"Impact of Ion Energy and Yield in Oblique Ion Beam Etching Process for Blazed Gratings";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - D. Rideau, M. Le Grand, L. Mouron, V. Serradeil, L. Tremas, P. Urard, D. Maitre, H. Mohamad, L. Dilhan, E.G. Carnemolla, M. Fissore, J. Downing, B. Rae:
"Approaches to Simulating Meta-surfaces for Flat Optical Devices: The Transition to Solutions Based on Neural Networks";
Talk: SISPAD, San Jose, CA, USA (invited); 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - A.-S. Royet, R. Chouk, O. Cueto, J. Kanyandekwe, V. Lapras, M. Jaud, S. Martinie, T. Mota-Frutuoso, B. Rrustemi, Z. Chalupa, O. Rozeau:
"Calibration Insights of Phosphorus Diffusion Model for NMOS FDSOI : Pathway to Advanced Technology Nodes";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - H. Saifi, J. Postel-Pellerin, N. Yazigy, N. Couzi, V. Della Marca, P. Canet, N. Caçoilo, G. Di Pendina, R. Sousa:
"Electrical TCAD Simulation of STT-MRAMs";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - A. Sanchez-Soares, T. Kelly, S.-K. Su, E. Chen, J.C. Greer, G. Fagas:
"Efficient Quantum Simulations of Devices Based on 2D Materials Including Vertical Heterojunctions";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - A. Sharma, A. Pampori, M. Tang, R. Goel, A. Mahmoud, V. Kubrak, C. Hu, Y. Chauhan:
"An Improved Overlap Capacitance Model for LDMOS Transistors based on the BSIM-BULK Framework";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - A. Singhal, G. Gill, A. Lahgere, G. Pahwa, H. Agarwal:
"Improved Compact Modeling of Snapback Behaviour in ESD MOSFETs";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - J. Son, J. Park, T. Lee, S. Woo, S. Yu:
"Modeling Row Hammer Effect in 3D Capacitor-less DRAM Using Triple-Gated Silicon Nanosheet Device";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - J. Song, W. Cheon, Y. Tsuji, Y. Higuchi, H. Kotakemori, J. Kim, D. Lee, S. Lee, Y. Kayama, J. Jeong, D. S. Kim, S. Lee:
"Wafer Edge and Backside Profile Integration with 3-D Process Emulation";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - C. Tung, S. Salahuddin, C. Hu:
"A SPICE-Compatible Neural Network Compact Model for Efficient IC Simulations";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - A. Tunga, M. Shur, M. Grupen, D. Hill, S. Rakheja:
"Simulating Terahertz Plasma Oscillations in Transistors";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - P. B. Vyas, A. Pal, S. Weeks, J. Holt, A. Kumar, L. Date, L. Megalini, M. Khoury, C. Caballero, D. Chaturvedula, M. Chudzik, S. Krishnan, S. Kengeri, E. Bazizi:
"Novel Mobility Enhancement Schemes for Next Generation Silicon Carbide (SiC) Trench MOSFET Technology";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - F. Widauer, X. Klemenschits, C. Balla, G. Rzepa, J. Gonzalez-Medina, B. Dongre, G. Strof, Z. Stanojevic, M. Karner:
"STEM Image Based Structure Generation for Advanced CMOS Devices";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - X. Xie, Z. Wang, Y. Wang, F. Liu:
"Global Field Heterogeneous Graph Neural Networks for Accelerating Quantum Transport Calculation";
Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - K. Yeom, G. Yoo, A. Schmidt, A. Payet, J. Jeon, S. Lee, Y. Nishizawa, M. Uchiyama, Y. Kayama, C. Ahn, W. Choi, D. S. Kim:
"Full Chip Stress Model for Defect Formation Risk Analysis in Multilayer Structures";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4. - Y. Zhao, Y. Yu, J. Guo, L. Wang, N. Yang, J. Jiang, Y. Lu, M. Zhou, S. Huang, L. Xu, Z. Wu, G. Yang, D. Geng, G. Wang, B. Kang, C. Zhao, L. Li, M. Liu:
"D2D Variation Aware DTCO for Novel Vertical a-IGZO-FETs in Large-Scale M3D 2TOC DRAM Bit Cell Evaluation via Statistical Modeling Methodology";
Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
Talks and Poster Presentations (without Proceedings-Entry)
- B. DeSalvo:
"The Future of Augmented Reality";
Keynote Lecture: SISPAD, San Jose, CA, USA (invited); 2024-09-25 - 2024-09-27. - A. Sarkar:
"Delivering to the era with pervasive intelligence with TCAD technologies and solutions";
Keynote Lecture: SISPAD, San Jose, CA, USA (invited); 2024-09-25 - 2024-09-27.