SISPAD 2024 Proceedings
- C. Ahn, J. Jeon, S. Lee, W. Choi, D. S. Kim, N. Cowern: 
 "Generalization of Fick's Law and Derivation of Interface Segregation Parameters Using Microscopic Atomic Movements";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- C. Ahn, K. Yeom, A. Schmidt, Y. Nishizawa, A. Payet, S. Jin, Y. Kayama, W. Choi, D. S. Kim: 
 "A Self-Consistent Tiling Method for Chip-Scale Stress Simulation";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- J. Ahn, S. Satapathy, J. Kulkarni: 
 "Optimization of Complementary Reconfigurable Field-Effect Transistor for Improved Circuit-Level Metrics";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- P.-H. Ahn, S.-M. Hong: 
 "AC Quantum Transport Simulation Including Electron-Phonon Scattering";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- P. Aleksandrov, P. Acharya, V. Georgiev: 
 "Diffusion-Based Machine Learning Method for Accelerating Quantum Transport Simulations in Nanowire Transistors";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- P. Baikadi, R. Kim, P.D. Reyntjens, A. Penumatcha, M.L. Van de Put, W. Vandenberghe: 
 "Towards Low Contact Resistance Metal Transition-Metal Dichalcogenide Contacts - A Quantum Transport Study";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- B. Bamer, S. Leroch, A. Hössinger, L. Filipovic: 
 "Cluster-Based Semi-Empirical Model for Dopant Activation in Silicon Carbide";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- A. Boujnah, O. Cueto, M. Jaud, S. Martinie, F. Nallet, C. Fenouillet-Beranger, O. Rozeau: 
 "DTCO of advanced FDSOI CMOS technology by process emulation";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- M. Brahma, M.L. Van de Put, E. Chen, M.V. Fischetti, W. Vandenberghe: 
 "Contact Resistance in Monolayer MoS2 Edge-Contacts: "Electrostatic" vs. Substitutional Doping";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- P. Chatterjee, K. Thakor, S. Mahapatra: 
 "A TCAD to SPICE Simulation Framework for Analysis of Device to Circuit BTI and HCD Aging";
 Talk: SISPAD, San Jose, CA, USA (invited); 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- W. Choi, H. Noh, H. Park, A.-T. Pham, S. Jin, B. Lee, C. Ahn, H. Kubotera, D. S. Kim: 
 "Hierarchical Simulation of Monolithic CFETs Using Atomistic and Continuum Models";
 Talk: SISPAD, San Jose, CA, USA (invited); 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- Y. Choi, S. Myung, K. Kim, G. Kang, B. Jung, Y. Jeon, K. Yeom, S. Han, J. Jeong, D. S. Kim: 
 "Real Time TCAD Calibration via Transfer Learning";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- K. Chou, Y. Li: 
 "First Simulation of the Effects of Metal Sidewall Source/Drain and Channel Number on the Output Characteristics of Current Mirror Formed by Vertically Stacked GAA Si NS MOSFETs";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- M.-H. Chuang, S. R. Kola, Y. Li: 
 "Characteristic Variability of GAA Si NS CFETs Induced by Process Variation Effect and Intrinsic Parameter Fluctuation";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- C. Dam Vedel, V. Georgiev: 
 "Atomistic Simulations of the Impact of Rotational Twin Planes Defects on the Optical Properties of InP Systems";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- T. Dutta, F. Adamu-Lema, N. Xeni, A. Rezaei, A. Dixit, I. Topaloglu, V. Georgiev, A. Asenov: 
 "Predictive Simulation of Nanosheet Transistors Including the Impact of Access Resistance";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- L. Filipovic, T. Reiter, J. Piso, R. Kostal: 
 "Equipment-Informed Machine Learning-Assisted Feature-Scale Plasma Etching Model";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- C. Finnan, L. Tatum, T. Liu: 
 "Advanced Ferroelectric Modeling for BEOL Negative Capacitance Nanoelectromechanical Switches";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- N. Gandhi, S. Rathore, R. K. Jaisawal, P. N. Kondekar, N. Kumar, A. Dixit, V. Georgiev, N. Bagga: 
 "Revealing the Noise Dependent Sensitivity of a Junctionless FinFET-Based Hydrogen Sensor with Ferroelectric Gate Stack";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- A. Gentles, M. Dehghani, R. Minixhofer, P. Khakbaz, D. Waldhör, M. Waltl: 
 "Modeling Next Generation Sensor Chips: Towards Predictive Band Structure Models for Quarternary III-V Semiconductor Alloys";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- S. Ghosh, M. Miura-Mattausch, H. Kikuchihara, T. Iizuka, S. Chaudhry, Y. Sahara: 
 "Modeling of SOI-MOSFET with Trap-Rich Substrate for RF Circuit Design";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- N. Govindugari, H. Y. Wong: 
 "Study of Using Variational Quantum Linear Solver for Solving Poisson Equation";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- J. Gull, L. Filipovic, H. Kosina: 
 "Electron-Electron Scattering in Non-Parabolic Transport Models";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- S. Han, D. Seo, J. Cha, S. Kim, M. Shin: 
 "Cation Disorder Limited IGZO Mobility Calculation Based on the Density Functional Theory";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- Y. Hayashi, S. Souma: 
 "Simulation of Qubits Confined in Pseudo Magnetic Field Generated by Strained Graphene Nanoribbon";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- T. Hellemans, D. Verreck, A. Arreghini, G. Van den Bosch, M. Rosmeulen, M. Houssa, J. Van Houdt: 
 "Modeling the Operation of Charge Trap Flash Memory: A Monte Carlo Approach to Carrier Distribution and (De)trapping";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- Z. Hu, L. Filipovic, J. Li, L. Wang, Z. Wu, R. Chen, Y. Wei, L. Li: 
 "Modeling Non-Uniformity During Two-Step Dry Etching of Si/SiGe Stacks for Gate-All-Around FETs";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- L. Hung, G. Rzepa, M. Kampl, C. Tsai, F. Schanovsky, O. Baumgartner, Z. Stanojevic, M. Karner: 
 "Hierarchical Transport Modeling for Path-Finding DTCO";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- H. Jacquinot, E. Pluchart, F. Rothan, S. Martinie, T. Wakaoka, R. Kasai, S. Hidaka, F. Voiron, C. Laviron, Y. Moursy: 
 "3D Electromagnetic Simulation and Modeling for DTCO of Decoupling High-Density Capacitor in Silicon Interposer for HPC Applications";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- K. Jana, S. Liu, K. Toprasertpong, Q. Jiang, S. Wahid, J. Kang, J. Chen, E. Pop, W. Wong: 
 "Modeling and Understanding Threshold Voltage and Subthreshold Swing in Ultrathin Channel Oxide Semiconductor Transistors";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- J. Jung, G. Yoo, A. Schmidt, W. Song, H. Kubotera, M. Raju, B. Lee, W. Choi, A. Payet, H. Koshimoto, Y. Kayama, B. Kim, C. Lee, J. Koo, J. Jeon, S. Lee, D. S. Kim: 
 "Atomistic Multiscale Simulation-Based Extraction of Design Margins in Advanced Transistor Architectures";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- S. Jung, I. K. Kim, K. Lee, S.-M. Hong: 
 "Process Emulation and Device Simulation of Monolithic CFET Inverter and Transmission Gate with Split-Gate Structure";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- J. H. Kim, S. Kim, H. Park, G. Kang, S. Ko, J. Yoon, W. Lee, Y. Park, J. Go, H.C. Kim, D. S. Kim: 
 "Atomistic analysis on random telegraph noise of SF transistors in sub-micrometer CIS pixels";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- K. Kim, S. Myung, Y. Choi, G. Kang, K. Yeom, S. Han, J. Jeong, D. S. Kim: 
 "Neural Drift-Diffusion Model Based on Operator Learning in Fourier Space";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- A. Kumar, R. Tiwari, H. Rai, R. Saikia, A. Bisht, S. Mahapatra: 
 "Modeling of Trap Generation in 3-D NAND Charge Trap Flash Memory";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- N. Kumar, C. P. Garcia, A. Dixit, V. Georgiev: 
 "Understanding the dynamic perturbative behaviour of Electrolyte-Gated FET based Biosensors with Immobilised Nanoparticles";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- R.-G. Lee, J. Song, Y.-H. Kim: 
 "First-principles study of the origins of random telegraph noise in MoS2/hBN-based field-effect transistors";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- S. Leroch, R. Stella, A. Hössinger, L. Filipovic: 
 "MD Simulation of Epitaxial Recrystallization and Defect Structure of Al-Implanted 4H-SiC";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- K. Lin, S. Amoroso, P. Chen, Y. Tseng, A. Brown, P. Asenov, U.G. Vej-Hansen, X.-W. Lin, A. Blom, V. Moroz, C. Wang: 
 "A Multiscale Simulation Approach for Program Noise and Cross-temperature Effects in 3D NANDs";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- K. Liu, T. Gunst, K.-H. Lee, A. Blom, X.-W. Lin: 
 "Memory Window and Variability Modeling of Multi- Domain Al:HfO2 Ferroelectric NAND Memory";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- A. Lu, H. Y. Wong: 
 "Rapid Simulation Framework for Superconducting Qubit Readout System Inverse Design and Optimization";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- P. Maciazek, I. Nicholson, J.-R. Manouvrier, D. Rideau, F. Kaklin, E. Lacombe, M. Al-Rawhani, C. Bu, S. Pellegrini, V. Georgiev: 
 "Automated Algorithmic Parameter Extraction of TCAD-Based SPAD SPICE Models";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- B. Magyari-Koepe, J. Wu: 
 "Advances in Modeling of Interconnect Materials";
 Talk: SISPAD, San Jose, CA, USA (invited); 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- T. Markussen, P.A. Khomyakov, B. Verstichel, A. Blom, R. Faber: 
 "Band Alignment in GAA Nanosheet Structures from Density Dependent Hybrid Functional and Many-Body GW Methods";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- L. Melican, H. Hsiao, D. Lemus, T. Kubis: 
 "Mode space in DFTB quantum transport in the nanodevice simulation tool NEMO5";
 Talk: SISPAD, San Jose, CA, USA (invited); 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- P. Mu, T. Cui, L. Xu, K. Luo, Z. Li, Z. Wu: 
 "A Finite Element Framework for Solving the Density-Gradient Model";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- L. Nguyen, A. Lu, H. Y. Wong: 
 "TCAD Structure Input File Generation Using Large Language Model";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- Y. Ogawa, H. Suzuki, M. Miyata: 
 "Identification of key atomic process of Metal-induced lateral crystallization from First-principles Calculations";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- T. Oh, H. Nam, C. Park, H. Cho: 
 "FuncAnoDe: A Function Level Anomaly Detection in Device Simulation";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- S. Park, D. Shin, J. H. Kim, Y. Park, D.S. Kim: 
 "Chip Reliability Improvement by Designing Re-Distribution Layer (RDL) Pattern for Thermal Cycle in Wafer Level Packages (WLP)";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- M. Pech, A. Abdi, D. Schulz: 
 "Density Matrix Based Transport in Heterostructure Devices Utilizing Tight-Binding Approaches";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- M. Pech, D. Schulz: 
 "Switching Behavior of Graphene Nanoribbon FETs";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- A.-T. Pham, M.A. Pourghaderi, S. Jin, S. Song, Y. Park, U. Kwon, W. Choi, D.S. Kim: 
 "Tunneling quantum correction potential model for drift-diffusion simulations of Schottky contact resistance";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- B. Pruckner, N. Jorstad, M. Bendra, T. Hádámek, W Goes, Siegfried Selberherr, V. Sverdlov: 
 "Simulation of Advanced MRAM Devices for sub-ns Switching";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- Y. Qing, J. Zhao, V. De Smedt, J. Prinzie: 
 "Cryogenic Modeling of 22nm FDSOI MOSFET";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- K. Rajput, R.-G. Lee, T. H. Kim, H. Yeo, J. Lee, Y.-H. Kim: 
 "First-Principles Calculations of Non-Equilibrium Energetics and Polarization Switching in Oxide Ferroelectric Tunnel";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- T. Reiter, A. Toifl, S. Kong, A. Hössinger, L. Filipovic: 
 "Impact of Ion Energy and Yield in Oblique Ion Beam Etching Process for Blazed Gratings";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- D. Rideau, M. Le Grand, L. Mouron, V. Serradeil, L. Tremas, P. Urard, D. Maitre, H. Mohamad, L. Dilhan, E.G. Carnemolla, M. Fissore, J. Downing, B. Rae: 
 "Approaches to Simulating Meta-surfaces for Flat Optical Devices: The Transition to Solutions Based on Neural Networks";
 Talk: SISPAD, San Jose, CA, USA (invited); 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- A.-S. Royet, R. Chouk, O. Cueto, J. Kanyandekwe, V. Lapras, M. Jaud, S. Martinie, T. Mota-Frutuoso, B. Rrustemi, Z. Chalupa, O. Rozeau: 
 "Calibration Insights of Phosphorus Diffusion Model for NMOS FDSOI : Pathway to Advanced Technology Nodes";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- H. Saifi, J. Postel-Pellerin, N. Yazigy, N. Couzi, V. Della Marca, P. Canet, N. Caçoilo, G. Di Pendina, R. Sousa: 
 "Electrical TCAD Simulation of STT-MRAMs";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- A. Sanchez-Soares, T. Kelly, S.-K. Su, E. Chen, J.C. Greer, G. Fagas: 
 "Efficient Quantum Simulations of Devices Based on 2D Materials Including Vertical Heterojunctions";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- A. Sharma, A. Pampori, M. Tang, R. Goel, A. Mahmoud, V. Kubrak, C. Hu, Y. Chauhan: 
 "An Improved Overlap Capacitance Model for LDMOS Transistors based on the BSIM-BULK Framework";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- A. Singhal, G. Gill, A. Lahgere, G. Pahwa, H. Agarwal: 
 "Improved Compact Modeling of Snapback Behaviour in ESD MOSFETs";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- J. Son, J. Park, T. Lee, S. Woo, S. Yu: 
 "Modeling Row Hammer Effect in 3D Capacitor-less DRAM Using Triple-Gated Silicon Nanosheet Device";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- J. Song, W. Cheon, Y. Tsuji, Y. Higuchi, H. Kotakemori, J. Kim, D. Lee, S. Lee, Y. Kayama, J. Jeong, D. S. Kim, S. Lee: 
 "Wafer Edge and Backside Profile Integration with 3-D Process Emulation";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- C. Tung, S. Salahuddin, C. Hu: 
 "A SPICE-Compatible Neural Network Compact Model for Efficient IC Simulations";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- A. Tunga, M. Shur, M. Grupen, D. Hill, S. Rakheja: 
 "Simulating Terahertz Plasma Oscillations in Transistors";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- P. B. Vyas, A. Pal, S. Weeks, J. Holt, A. Kumar, L. Date, L. Megalini, M. Khoury, C. Caballero, D. Chaturvedula, M. Chudzik, S. Krishnan, S. Kengeri, E. Bazizi: 
 "Novel Mobility Enhancement Schemes for Next Generation Silicon Carbide (SiC) Trench MOSFET Technology";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- F. Widauer, X. Klemenschits, C. Balla, G. Rzepa, J. Gonzalez-Medina, B. Dongre, G. Strof, Z. Stanojevic, M. Karner: 
 "STEM Image Based Structure Generation for Advanced CMOS Devices";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- X. Xie, Z. Wang, Y. Wang, F. Liu: 
 "Global Field Heterogeneous Graph Neural Networks for Accelerating Quantum Transport Calculation";
 Poster: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- K. Yeom, G. Yoo, A. Schmidt, A. Payet, J. Jeon, S. Lee, Y. Nishizawa, M. Uchiyama, Y. Kayama, C. Ahn, W. Choi, D. S. Kim: 
 "Full Chip Stress Model for Defect Formation Risk Analysis in Multilayer Structures";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
- Y. Zhao, Y. Yu, J. Guo, L. Wang, N. Yang, J. Jiang, Y. Lu, M. Zhou, S. Huang, L. Xu, Z. Wu, G. Yang, D. Geng, G. Wang, B. Kang, C. Zhao, L. Li, M. Liu: 
 "D2D Variation Aware DTCO for Novel Vertical a-IGZO-FETs in Large-Scale M3D 2TOC DRAM Bit Cell Evaluation via Statistical Modeling Methodology";
 Talk: SISPAD, San Jose, CA, USA; 2024-09-25 - 2024-09-27; in: "Proc. of SISPAD", (2024), 979-8-3315-1635-2; 1 - 4.
Talks and Poster Presentations (without Proceedings-Entry)
- B. DeSalvo: 
 "The Future of Augmented Reality";
 Keynote Lecture: SISPAD, San Jose, CA, USA (invited); 2024-09-25 - 2024-09-27.
- A. Sarkar: 
 "Delivering to the era with pervasive intelligence with TCAD technologies and solutions";
 Keynote Lecture: SISPAD, San Jose, CA, USA (invited); 2024-09-25 - 2024-09-27.
