SISPAD 2022 Proceedings
- F. Gamiz (ed.):
"Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)";
Universidad de Granada, Granada, Spain, 2022, 219 pages.
Talks and Poster Presentations (with Proceedings-Entry)
- E. Amat, A. del Moral, J. Bausells, F. Perez-Murano:
"Stacking devices in a vertical nanowire, a feasible option to implement smaller ICs";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 193 - 194. - M. Annamalai, M. Schröter:
"A compact physical expression for the static drain current in heterojunction barrier CNTFETs";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2022), ISSN: 0038-1101; 108523-1 - 108523-5. - J. Backman, Y. Lee, M. Luisier:
"Electron-phonon calculations using a Wannier-based supercell approach: Applications to the monolayer MoS2 mobility";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108461-1 - 108461-4. - J. Cao, S. Fiore, C. Klinkert, M. Luisier:
"Bulk photovoltaic effect in partial overlap MoSe2-WSe2 van der Waals heterostructures: An ab initio quantum transport study";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108452-1 - 108452-4. - S. Cha, S.-M. Hong:
"Approximate H-transformation for numerical stabilization of a deterministic Boltzmann transport equation solver based on a spherical harmonics expansion";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108457-1 - 108457-4. - Y. Cha, J. Park, C. Park, S. Chong, C.-H. Kim, C.-S. Lee, I. Jeong, H. Cho:
"A novel methodology for neural compact modeling based on knowledge transfer";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108450-1 - 108450-5. - S. Cho, B. Choi:
"String-level Compact Modeling Based on Channel Electrostatic Potential for Dynamic Operation of 3D Charge Trapping Flash Memories";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 101 - 102. - Y. Chu, S. Lu, M. Povolotskyi, G. Klimeck, U. Ravaioli, T. Palacios, M. Mohamed:
"Assessment of Lateral and Vertical Tunneling FETs Based on 2D Material for Ultra-Low Power Logic Applications";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 23 - 24. - R Defrance, B. Sklénard, M Guillaumont, J. Li, M. Freyss:
"Ab initio study of electron mobility in V2O5 via polaron hopping";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108455-1 - 108455-4. - E. Deylgat, E. Chen, M.V. Fischetti, B. Soree, W.G. Vandenberghe:
"Image-force barrier lowering in top- and side-contacted two-dimensional materials";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108458-1 - 108458-4. - S. Donati Guerrieri, E. Catoggio, F. Bonani:
"TCAD simulation of microwave circuits: The Doherty amplifier";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108445-1 - 108445-5. - L. Donetti, C. Marquez, C. Navarro, C. Medina-Bailon, J.L. Padilla, C. Sampedro, F. Gamiz:
"Towards a DFT-based layered model for TCAD simulations of MoS2";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108437-1 - 108437-4. - M. Fan, F. Liu, X. Liu:
"Polarization switching characteristics in AFE/FE Double-Layer devices";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108454-1 - 108454-5. - F. Gity:
"Mono-material TMD-based heterostructures for nanoelectronics applications";
Talk: SISPAD, Granada, Spain (invited); 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 68 - 69. - C. Jungemann, F. Meng, M. D. Thomson, H. G. Roskos:
"Massively parallel FDTD full-band Monte Carlo simulations of electromagnetic THz pulses in p-doped silicon at cryogenic temperatures";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108439-1 - 108439-4. - G. Klimeck, T. Faltens, D. Mejia, A. Strachan, L. Zentner, M. Zentner:
"Semiconductor workforce development through immersive simulations on nanoHUB.org";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 103 - 104. - S. Kumar, T. Samadder, D. Kochar, S. Mahapatra:
"A Stochastic Simulation Framework for TDDB in MOS Gate Insulator Stacks";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 160 - 161. - H. Kwon, H. Seo, H. Huh, F. Iza, D. Oh, S. K. Park, S. Cha:
"TCAD Augmented Generative Adversarial Network for Optimizing a Chip-level Size Mask Layout Design in the HARC Etching Process";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 65 - 67. - P. Lapham, V. P. Georgiev:
"Theoretically probing the relationship between barrier length and resistance in Al/AlOx/Al tunnel junctions";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108442-1 - 108442-4. - W. Lee, S. Ko, J. H. Kim, Y.-S. Kim, U. Kwon, H.C. Kim, D. S. Kim:
"Simulation-based study on characteristics of dual vertical transfer gates in sub-micron pixels for CMOS image sensors";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108472-1 - 108472-3. - Y. Li, X. Huang, C. Liao, R. Wang, S. Zhang, L. Zhang, R. Huang:
"A dynamic current hysteresis model for IGZO-TFT";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108459-1 - 108459-5. - A. Lu, J. Marshall, Y. Wang, M. Xiao, Y. Zhang, H. Y. Wong:
"Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108468-1 - 108468-4. - M. Matic, M. Poljak:
"Ab initio quantum transport simulations of monolayer GeS nanoribbons";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108460-1 - 108460-4. - J. P. Mendez, D. Mamaluy:
"Disorders in δ-layer tunnel junctions";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 121 - 122. - M. OŽDonovan, P. Farrell, T. Streckenbach, T. Koprucki, S. Schulz:
"Impact of random alloy fluctuations on carrier transport in (In,Ga)N quantum well systems: Linking atomistic tight-binding models to drift-diffusion";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", (2022), 91 - 92. - A. Pilotto, P. Dollfus, J. Saint-Martin, M. Pala:
"Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108469-1 - 108469-4. - R.J. Prentki, M. Harb, C. Zhou, P. Philippopoulos, F. Beaudoin, V. Michaud-Rioux, H. Guo:
"Tunneling leakage in ultrashort-channel MOSFETs - From atomistics to continuum modeling";
Talk: SISPAD, Granada, Spain (invited); 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108438-1 - 108438-4. - F. Rodrigues, L. F. Aguinsky, A. Hössinger, J. Weinbub:
"3D Feature-Scale Modeling of Highly Selective Fluorocarbon Plasma Etching";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 32 - 33. - B. Rrustemi, F. Triozon, M. Jaud, W. Vandendaele, G. Ghibaudo:
"Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108470-1 - 108470-5. - H. Ryu:
"On the noise-sensitivity of entangling quantum logic operations implemented with a semiconductor quantum dot platform";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108453-1 - 108453-4. - Siegfried Selberherr, V. Sverdlov:
"About electron transport and spin control in semiconductor devices";
Talk: SISPAD, Granada, Spain (invited); 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108443-1 - 108443-4. - M. Shin, S. Jeon, K. Joo:
"Efficient atomistic simulations of lateral heterostructure devices with metal contacts";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108456-1 - 108456-4. - K. Sonoda, N. Shiraishi, K. Maekawa, N. Ito, E. Hasegawa, T. Ogata:
"Modeling electrical resistivity of CrSi thin films";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108471-1 - 108471-4. - A. Toral-Lopez, E. G. Marin, F. Pasadas, D. Pardo, J. Cuesta, F.G Ruiz, A. Godoy:
"1D Drift-Diffusion transport in 2D-material based FETs with vertical contacts";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 105 - 106. - L. Treps, J. Li, B. Sklénard:
"Impact of hydrogen coverage on silane adsorption during Si epitaxy from ab initio simulations";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108441-1 - 108441-3. - H. Xu, W. Gan, L. Cao, H. Yin, Z. Wu:
"A Machine-learning-based Multi-Objective Optimization of Stacked Nanosheet Transistors for sub-3nm technology node";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 109 - 110. - K. Yamaguchi, S. Souma:
"Scattering matrix-based low computational cost model for the device and circuit co-simulation of phosphorene tunnel field-effect transistors";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 140 - 141.