SISPAD 2017 Proceedings

• E. Abbaspour, S. Menzel, C. Jungemann:
  "Random Telegraph Noise analysis in Redox-based Resistive Switching Devices Using KMC Simulations";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 313 - 316.
  
  
• F. Adamu-Lema, M. Duan, C. Navaro, V. Georgiev, B. Cheng, X. Wang, C. Millar, F. Gamiz, A. Asenov:
  "Simulation Based DC and Dynamic Behaviour Characterization of Z2FET";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 317 - 320.
  
  
• S.H. Ahn, M. Ryu, E. Jang, H.J. Jeon, K.R. Kim:
  "Advanced non-quasi-static(NQS) compact model for characterization of non-resonant plasmonic terahertz detector";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 297 - 300.
  
  
• T. Al-Ameri, V. P. Georgiev, F. Adamu-Lema, A. Asenov:
  "Does a Nanowire Transistor Follow the Golden Ratio?";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 57 - 60.
  
  
• S. Andermatt, M.H. Bani-Hashemian, S. Brück, J. Vande Vondele, M. Luisier:
  "Transport Simulations with Density-Matrix-Based Real-Time Time-Dependant Density Functional Theory";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 177 - 180.
  
  
• A. Ayres, O. Rozeau, B. Borot, L. Fesquet, G. Cibrario, M. Vinet:
  "Back-end Limitations in Advanced Nodes and Alternatives";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 149 - 152.
  
  
• A. Aziz, N. Jao, S. Datta, V. Narayanan, S.K. Gupta:
  "A Computationally Efficient Compact Model for Leakage in Cross-point Array";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 141 - 144.
  
  
• J.-C. Barbé, S. Barraud, O. Rozeau, S. Martinie, J. Lacord, P. Blaise, Z. Zeng, L. Bourdet, F. Triozon, Y. Niquet:
  "Stacked Nanowires/Nanosheets GAA MOSFET From Technology to Design Enablement";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 5 - 8.
  
  
• E.M. Bazizi, A. Zaka, T. Herrmann, I. Cortes, L. Jiang, M.H.J. GOH, S.D. Roy, E. Nowak, G. Kluth, P. Javorka, L. Pirro, J. Mazurier, D. Harame, T. Kammler, J. Höntschel, J. Schaeffer, F. Benistant, B. Rice:
  "Versatile technology modeling for 22FDX platform development";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 365 - 368.
  
  
• M. Bellini, L. Knoll:
  "Application of Multiobjective Optimizer Algorithms to the Design of SiC devices";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 45 - 48.
  
  
• S. Blawid, D.L.M. de Andrade, F. Wolf, S. Mothes, M. Claus:
  "Evaluation of reconfigurable tunnel FETs for low power and high performance operation";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 193 - 196.
  
  
• J. Cho, F. Geelhaar, U. Rana, L. Vanamurthy, R. Sporer, F. Benistant:
  "TCAD Analysis of SiGe Channel FinFET Devices";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 357 - 360.
  
  
• J.-H. Choy, V. Sukharev, S. Chatterjee, F.N. Najm, A. Kteyan, S. Moreau:
  "Finite-difference methodology for full-chip electromigration analysis applied to 3D IC test structure: simulation vs. experiment";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 41 - 44.
  
  
• A. Chvala, J. Marek, P. Pribytny, A. Satka, D. Donoval, S. Stoffels, N. Posthuma, S. Decoutere:
  "Electrothermal Analysis of Power Multifinger HEMTs Supported by Advanced 3-D Device Simulation";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 253 - 256.
  
  
• T. Cosnier, L. Lucci, A. Torres, M. Pala:
  "Local Stress Engineering for the Optimization of p-GaN Gate HEMTs Power Devices";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 121 - 124.
  
  
• G. Darbandy, S. Mothes, M. Schröter, M. Claus:
  "Analysis of Screening Effects in Multiple-Gate and Gate-All-Around Si NW array FETs";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 181 - 184.
  
  
• A. Dasgupta, Y. Chauhan:
  "Modeling of Flicker Noise in Quasi-ballistic FETs";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 105 - 108.
  
  
• M. Duan, F. Adamu-Lema, B. Cheng, C. Navarro, X. Wang, V. P. Georgiev, F. Gamiz, C. Millar, A. Asenov:
  "2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 325 - 328.
  
  
• S. Emekar, J. Jha, S. Mukherjee, M. Meer, K. Takhar, D. Saha, S. Ganguly:
  "Modified Angelov model for an exploratory GaNHEMT technology with short, few-fingered gates";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 117 - 120.
  
  
• L. Filipovic, R.L. de Orio, W. Zisser, S. Selberherr:
  "Modeling Electromigration in Nanoscaled Copper Interconnects";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 161 - 164.
  
  
• N. Fujimoto, A. Hiroki, S. Hiratoko:
  "Angular dependence of nonparabolicity factor of energy band structures";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 221 - 224.
  
  
• R. Fujita, K. Konaga, Y. Ueoka, Y. Kamakura, N. Mori, T. Kotani:
  "Analysis of Anisotropic Ionization Coefficient in Bulk 4H-SiC with Full-Band Monte Carlo Simulation";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 289 - 292.
  
  
• K. Fukuda, J. Hattori, H. Asai, M. Shimizu, T. Hashizume:
  "Simulation of GaN MOS capacitance with frequency dispersion and hysteresis";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 233 - 236.
  
  
• J. Furuta, S. Umehara, K. Kobayashi:
  "Analysis of Neutron-induced Soft Error Rates on 28nm FD-SOI and 22nm FinFET Latches by the PHITS-TCAD Simulation System";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 185 - 188.
  
  
• T. Gao, L. Zeng, D. Zhang, X. Qin, M. Long, Y. Zhang, W. Zhao:
  "High Speed Low Power All Spin Logic Devices Assisted by Negative Capacitance Amplified Voltage Controlled Magnetic Anisotropy Effect";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 305 - 307.
  
  
• T. Gunst, M. Brandbyge, M. Palsgaard, T. Markussen, K. Stokbro:
  "New approaches for first-principles modelling of inelastic transport in nanoscale semiconductor devices with thousands of atoms";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 13 - 16.
  
  
• M. Hashimoto, W. Liao, S. Hirokawa:
  "Soft Error Rate Estimation with TCAD and Machine Learning";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 129 - 132.
  
  
• H. Hirai, M. Ogawa, S. Souma:
  "Effect of strain on electron mobility in graphene";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 209 - 212.
  
  
• T. Iizuka, Y. Hirano, T. Umeda, H. Kikuchihara, H. Miyamoto, D. Navarro, M. Miura-Mattausch, H.J. Mattausch:
  "Compact Modeling of Normally-on MOSFET Applicable for Any Technology Generations";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 261 - 264.
  
  
• H. Imran, S. Iqbal, A. Farooq, N.Z. Butt:
  "Computational Modeling of Hybrid Graphene/Quantum Dot Photodetectors";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 201 - 204.
  
  
• S. Iqbal, H. Imran, U.B. Qasim, N.Z. Butt:
  "Design of High Performance Graphene/Silicon Photodetectors";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 205 - 208.
  
  
• M. Jaud, Y. Baines, M. Charles, E. Morvan, P. Scheiblin, A. Torres, M. Plissonnier, J.-C. Barbé:
  "TCAD for gate stack optimization in pGaN Gate HEMT devices";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 113 - 116.
  
  
• V. Joshi, B. Shankar, S.P. Tiwari, M. Shrivastava:
  "Dependence of Avalanche Breakdown on Surface & Buffer Traps in AlGaN/GaN HEMTs";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 109 - 112.
  
  
• S. Jung, J. Seo, S. Heo, M. Shin:
  "Performance investigation of uniaxially strained phosphorene n-MOSFETs";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 341 - 344.
  
  
• M. Kampl, H. Kosina:
  "Hot Carrier Study Including e-e Scattering Based on a Backward Monte Carlo Method";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 293 - 296.
  
  
• Z. Kargar, D. Ruic, T. Linn, C. Jungemann:
  "Simulation of THz Emission by Plasma Waves in GaAs Devices Based on the Boltzmann Transport Equation";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 301 - 304.
  
  
• D. Kim, H. Yu, S. Rhee, Y.J. Park:
  "Modeling of the effective field dependent mobility for TCAD simulation of DRAM cell transistors considering the random discrete dopants";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 241 - 244.
  
  
• F.J. Klüpfel, P. Pichler:
  "3D Simulation of Silicon-Based Single-Electron Transistors";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 77 - 80.
  
  
• R. Koh, M. Miyamori, K. Tsuneno, T. Muta, Y. Kawashima:
  "A SPICE-compatible model of SG-MONOS for 28nm flash macro design considering the parasitic resistance caused by trapped charges";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 145 - 148.
  
  
• B.S. Kumar, M. Paul, M. Shrivastava:
  "On the Design Challenges of Drain Extended FinFETs for Advance SoC Integration";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 189 - 192.
  
  
• S. Kumashiro, T. Kamei, A. Hiroki, K. Kobayashi:
  "An Accurate Metric to Control Time Step of Transient Device Simulation by Matrix Exponential Method";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 37 - 40.
  
  
• J. Lacord, M. Jaud, T. Poiroux, J.-C. Barbé:
  "Fast evaluation of Continuous-RX impact on performance for Strained FDSOI";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 361 - 364.
  
  
• J. Lacord, S. Martinie, M.-S. Parihar, K. Lee, M. Bawedin, S. Cristoloveanu, Y. Taur, J.-C. Barbé:
  "Z²-FET DC hysteresis: deep understanding and preliminary model";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 321 - 324.
  
  
• A.A. Laturia, W.G. Vandenberghe:
  "Dielectric Properties of Mono- and Bilayers Determined from First Principles";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 337 - 340.
  
  
• J . Lee, S. Berrada, J. Liang, T. Sadi, V. P. Georgiev, A. Todri-Sanial, D. Kalita, R. Ramos, H. Okuno, J. Dijon, A. Asenov:
  "The Impact of Vacancy Defects on CNT Interconnects: From Statistical Atomistic Study to Circuit Simulations";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 157 - 160.
  
  
• J . Lee, J. Liang, S.M. Amoroso, T. Sadi, L. Wang, P. Asenov, A. Pender, D.T. Reid, V. P. Georgiev, C. Millar, A. Todri-Sanial, A. Asenov:
  "Atoms-to-Circuits Simulation Investigation of CNT Interconnects for Next Generation CMOS Technology";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 153 - 156.
  
  
• W.-K. Lee, K. Huang, L.C. Hsu, C. Huang, J. Liang, J. Chen, C. Hsiao, K. Su, C.-K. Lin, M.-C. Jeng:
  "A Unified Aging Model with Recovery Effect and Its Impact on Circuit Design";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 93 - 96.
  
  
• Y.-H. Lee, J.H. Lee, Y.S. Tsai, S. Mukhopadhyay, Y.F. Wang:
  "Modeling of BTI-Aging VT Stability for Advanced Planar and FinFET SRAM Reliability";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 85 - 88.
  
  
• S.-C. Lu, Y. Kim, M.J. Gilbert, U. Ravaioli, M.Y. Mohamed:
  "Modeling of Black Phosphorus vertical TFETs without chemical doping for drain";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 345 - 347.
  
  
• S. Machida, K. Nomura:
  "Simulation of Turn-off Oscillation Suppression in Silicon Insulated Gate Bipolar Transistors";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 257 - 260.
  
  
• J. Madan, S. Shekhar, R. Chaujar:
  "PNIN-GAA-Tunnel FET with Palladium Catalytic Metal Gate as a Highly Sensitive Hydrogen Gas Sensor";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 197 - 200.
  
  
• P. Manstetten, A. Hössinger, J. Weinbub, S. Selberherr:
  "Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 73 - 76.
  
  
• A. Marchewka, R. Waser, S. Menzel:
  "Physical Modeling of the Electroforming Process in Resistive-Switching Devices";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 133 - 136.
  
  
• C. Medina-Bailon, C. Sampedro, J.L. Padilla, A. Godoy, L. Donetti, F. Gamiz, T. Sadi, V. Georgiev, A. Asenov:
  "Multi-Subband Ensemble Monte Carlo Study of Tunneling Leakage Mechanisms";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 281 - 284.
  
  
• G. Mil nikov, J.-I. Iwata, N. Mori, A. Oshiyama:
  "First-principles calculations of the non-equilibrium polarization in ultra-small Si nanowire devices";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 349 - 352.
  
  
• P. Moroz, D.J. Moroz:
  "Feature Scale Simulation for Advanced Processing";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 237 - 239.
  
  
• S. Mudanai, A.S. Roy:
  "Unique Challenges in Compact Modeling";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 49 - 52.
  
  
• M. Noei, D. Ruic, C. Jungemann:
  "Small-Signal Analysis of Silicon Nanowire Transistors Based on a Poisson/Schrödinger/Boltzmann Solver";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 65 - 68.
  
  
• H.-H. Park, S. Jin, W. Choi, M. Luisier, J. Kim, K.-H. Lee:
  "Atomistic Simulation of Band-to-Band Tunneling in SiGe: Influence of Alloy Scattering";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 173 - 176.
  
  
• E. Piccinini, M. Rudan, R. Brunetti:
  "Implementing Physical Unclonable Functions Using PCM Arrays";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 269 - 272.
  
  
• M.A. Pourghaderi, C. Park, J. Kim, C. Jeong, W.-Y. Chung, K.-H. Lee, H.-H. Park, A.-T. Pham, S. Jin, W. Choi:
  "Nanoscale-nMOSFET Junction Design: Quantum Transport Approach";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 53 - 56.
  
  
• P. Pribytny, A. Chvala, J. Marek, D. Donoval:
  "TCAD Simulation Methodology for Full 3-D Electro- Physical and Advanced Thermal Analysis of Power Modules";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 249 - 252.
  
  
• M.A. Rabie, I. Aden-Ali, Y.M. Haddara:
  "Novel Experimentally Calibrated Multiphase TCAD Model for Cobalt Germanide Growth";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 69 - 72.
  
  
• M. Rau, M. Luisier, H.-H. Park:
  "Modeling of crystal impurities in III-V ultra-thin body field-effect transistors within the empirical tightbinding framework";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 353 - 356.
  
  
• N. Rohbani, H. Miyamoto, H. Kikuchihara, D. Navarro, T.K. Maiti, C. Ma, M. Miura-Mattausch, S.-G. Miremadi, H.J. Mattausch:
  "Circuit-Aging Modeling Based on Dynamic MOSFET Degradation and Its Verification";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 97 - 100.
  
  
• N. Rostand, S. Martinie, J. Lacord, O. Rozeau, J-C. Barbe, G. Hubert:
  "Single Event Transient in bulk MOSFETs: original modelling for SPICE application";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 89 - 92.
  
  
• S. Salahuddin:
  "Energy Efficient Computing with Hyperdimensional Vector Space Models";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 9 - 10.
  
  
• N. Sano:
  "Physical Issues in Device Modeling: Length-Scale, Disorder, and Phase Interference";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 1 - 4.
  
  
• S. Sant, M. Luisier, A. Schenk:
  "DFT-based Analysis of the Origin of Traps at the InAs/Si (111) Interface";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 17 - 20.
  
  
• R. Sawabe, N. Ito, Y. Awano:
  "Advanced Quasi-Self-consistent Monte Carlo Simulations on High-Frequency Performance of Nanometer-scale GaN HEMTs Considering Local Phonon Distribution";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 285 - 288.
  
  
• P. Scheiblin, J. Lacord, L. Lucci, J.-C. Barbé, A. Zaka, E.M. Bazizi, T. Herrmann, E. Morvan, L. Pirro, J. Mazurier, D. Harame:
  "Optimization of RF-22nm FDSOI Figures of Merit with 3D TCAD simulation";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 369 - 372.
  
  
• A. Schenk, S. Sant, K. Moselund, H. Riel, E. Memisevic, L.-E. Wernersson:
  "The Impact of Hetero-junction and Oxide-interface Traps on the Performance of InAs/Si and InAs/GaAsSb Nanowire Tunnel FETs";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 273 - 276.
  
  
• X. Shi, G. Xu, X. Duan, N. Lu, J. Chen, L. Li, M. Liu:
  "Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 225 - 228.
  
  
• S. Sho, S. Odanaka:
  "A hybrid MPI/OpenMP parallelization method for a quantum drift-diffusion model";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 33 - 36.
  
  
• V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
  "Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 125 - 128.
  
  
• L. Song, J. Zhang:
  "Efficient Models for Designing GB-Level 3-D 1S1R Horizontal-Stacked-RRAM and Vertical-RRAM Arrays";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 137 - 140.
  
  
• Y.-S. Song, C.-Y. Chu, J. Jeon, U.-H. Kwon, K.-H. Lee, S. Kim:
  "Accurate BEOL Statistical Modeling Methodology with Circuit-Level Multi-Layer Process Variations";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 265 - 268.
  
  
• S. Souma, T. Akiyama, K. Sasaoka, M. Ogawa:
  "Time dependent quantum dynamical study of laser induced current switching in graphene";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 213 - 216.
  
  
• Z. Stanojevic, O. Baumgartner, M. Karner, C. Kernstock, HW. Karner, H. Demel, G. Strof, F. Mitterbauer:
  "Towards Physics-Based DTCO for Performance of Advanced Technology Nodes";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 245 - 247.
  
  
• W.-L. Sung, P.-J. Chao, Y. Li:
  "Timing and Power Fluctuations on Gate-All-Around Nanowire CMOS Circuit Induced by Various Sources of Random Discrete Dopants";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 61 - 64.
  
  
• S. Suzuki, A.M.M. Hammam, M.E. Schmidt, M. Muruganathan, H. Mizuta:
  "Sub 0.5 V bias voltage operation of a triple-topgate graphene tunnel field effect transistor";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 309 - 312.
  
  
• H. Tanaka, J. Suda, T. Kimoto:
  "Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 277 - 280.
  
  
• Y.-C. Tsai, Y. Li:
  "On Electronic Structure and Geometry of MoX₂ (X = S, Se, Te) and Black Phosphorus by ab initio Simulation with Various van der Waals Corrections";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 169 - 172.
  
  
• D. Vaidya, S. Lodha, S. Ganguly:
  "Comparison of Basis Sets for Efficient Ab-initio Modeling of Semiconductors";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 165 - 168.
  
  
• D. Verreck, A.S. Verhulst, M.L. Van de Put, B. Soree, W. Magnus, N. Collaert, A. Mocuta, G. Groeseneken:
  "Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 29 - 32.
  
  
• F.T. Wakam, J. Lacord, S. Martinie, J.-C. Barbé, M. Bawedin, S. Cristoloveanu:
  "Optimization guidelines of A2RAM cell performance through TCAD simulations";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 329 - 332.
  
  
• W. Wei, X. Chuai, N. Lu, Y. Wang, L. Li, C. Ye, M. Liu:
  "Simulation of doping effect for HfO₂-based RRAM based on first-principles calculations";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 21 - 24.
  
  
• H.Y. Wong, N. Braga, R.V. Mickevicius:
  "A Physical Model of the Abnormal Behavior of Hydrogen-Terminated Diamond MESFET";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 333 - 336.
  
  
• H.Y. Wong, S. Motzny, V. Moroz, S. Mishra, S. Mahapatra:
  "FinFET NBTI Degradation Reduction and Recovery Enhancement through Hydrogen Incorporation and Self-Heating";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 101 - 104.
  
  
• T.-H. Yu:
  "Effects of Surface Orientation and Body Thickness on the Performance of III-V Ultrathin-Body nMOSFETs";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 229 - 232.
  
  
• M. Zanuccoli, C. Fiegna, E. Cianci, C. Wiemer, A. Lamperti, G. Tallarida, L. Lamagna, S. Losa, S. Rossini, F. Vercesi:
  "Simulation of micro-mirrors for optical MEMS";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 81 - 84.
  
  
• X. Zhang, G. Liang:
  "Performance Evaluation of Ferroelectric MOSFETs based on Gibbs Free Energy";
  Poster: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 217 - 220.
  
  
• A. Ziegler, M. Luisier:
  "Phonon confinement effects in diffusive quantum transport simulations with the effective mass approximation and k * p method";
  Talk: SISPAD, Kamakura, Japan; 2017-09-07 - 2017-09-09; in: "Proc. of SISPAD", (2017), 25 - 28.