- A. Akturk, S. Salemi, N. Goldsman, S. Potbhare, A. Lelis:

"*Density Functional Theory Based Simulation of Carrier Transport in Silicon Carbide and Silicon Carbide-Silicon Dioxide Interfaces*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 119 - 122. - C. Alexander, A. Asenov:

"*Statistical MOSFET Current Variation Due to Variation in Surface Roughness Scattering*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 275 - 278. - S. Amoroso, C. Alexander, S. Markov, G. Roy, A. Asenov:

"*A Mobility Model Correction for 'Atomistic' Drift-Diffusion Simulation*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 279 - 282. - M.G. Ancona, S. Binari:

"*Thermoelectromechanical Simulation of GaN HEMTs*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 111 - 114. - P. Asenov, F. Adamu-Lema, S. Roy, C. Millar, A. Asenov, G. Roy, U. Kovac, D. Reid:

"*The Effect of Compact Modelling Strategy on SNM and Read Current variability in Modern SRAM*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 283 - 286. - V. Axelrad, H. Hayashi, I. Kurachi:

"*Physical Circuit-Device Simulation of ESD and Power Devices*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 175 - 178. - S. Barraud, T. Poiroux, O. Faynot:

"*A Wigner Function-Based Determinist Method for the Simulation of Quantum Transport in Silicon Nanowire Transistors*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 75 - 78. - O. Baumgartner, Z. Stanojevic, H. Kosina:

"*Efficient Simulation of Quantum Cascade Lasers using the Pauli Master Equation*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 91 - 94. - M. Bellini, J. Vobecky:

"*TCAD simulations of irradiated power diodes over a wide temperature range*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 183 - 186. - A. Burenkov, P. Pichler, J. Lorenz, Y. Spiegel, J. Duchaine, F. Torregrosa:

"*Simulation of Plasma Immersion Ion Implantation*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 231 - 234. - F. Buscemi, E. Piccinini, F. Giovanardi, M. Rudan, R. Brunetti, C. Jacoboni:

"*Quantum Electronic Trap-to-Band Transitions in Chalcogenides Induced by Electron-Electron Interaction*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 67 - 70. - H. Ceric, R.L. de Orio, F. Schanovsky, W. Zisser, S. Selberherr:

"*Multilevel Simulation for the Investigation of Fast Diffusivity Paths*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 135 - 138. - H. Chang, H. Li, C. Liu, M. Tsai:

"*A Parameterized SPICE Macromodel of Resistive Random Access Memory and Circuit Demonstration*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 163 - 166. - K. Chang, H. Noh, E. Choi, B. Ryu:

"*First-principles study of Si CMOS materials and nanostructures*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 9. - H.-W. Cheng, Y. Li, C. Yiu, H. Su:

"*Nanosized Metal Grains Induced Electrical Characteristic Fluctuation in 16 nm Bulk and SOI FinFET Devices with TiN/HfO*";_{2}Gate Stack

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 287 - 290. - Y. Chiu, Y. Li, H.-W. Cheng:

"*Correlation between Interface Traps and Random Dopants in Emerging MOSFETs*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 291 - 294. - R.L. de Orio, H. Ceric, S. Selberherr:

"*A Compact Model for Early Electromigration Lifetime Estimation*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 23 - 26. - J. Dura, S. Martinie, D. Munteanu, F. Triozon, S. Barraud, Y.M. Niquet, J.-L. Autran:

"*Analytical model of drain current in nanowire MOSFETs including quantum confinement, band structure effects and quasi-ballistic transport: device to circuit performances analysis*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 43 - 46. - Z. Essa, P. Boulenc, C. Tavernier, F. Hirigoyen, A. Crocherie, J. Michelot, D. Rideau:

"*3D TCAD Simulation of Advanced CMOS Image Sensors*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 187 - 190. - L. Filipovic, S. Selberherr:

"*A Level Set Simulator for Nanooxidation using Non-Contact Atomic Force Microscopy*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 307 - 310. - X. Fong, M. Gupta, N. Mojumder, S. Choday, C. Augustine, K. Roy:

"*KNACK: A Hybrid Spin-Charge Mixed-Mode Simulator for Evaluating Different Genres of Spin-Transfer Torque MRAM Bit-cells*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 51 - 54. - K. Fukuda, M. Nishizawa, T. Tada, L. Bolotov, K. Suzuki, S. Sato, H. Arimoto, T. Kanayama:

"*3D Modeling based on Current Continuity for STM Carrier Profiling of Semiconductor Devices*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 259 - 262. - A. Glière, O. Cueto, J. Hazart:

"*Coupling the Level Set Method with an electro-thermal solver to simulate GST based PCM cells*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 63 - 66. - X. Guan, D. Kim, K.C. Saraswat, W. Wong:

"*Analytical Approximation of Complex Band Structures for Band-to-Band Tunneling Models*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 270 - 273. - D. Guerra, D.K. Ferry, S.M. Goodnick, M. Saraniti, F.A. Marino:

"*Large-Signal Full-Band Monte Carlo Device Simulation of Millimeter-Wave Power GaN HEMTs with the Inclusion of Parasitic and Reliability Issues.*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 87 - 90. - S. Hadi, A. Nayfeh, P. Hashemi, J. Hoyt:

"*a-Si/c-Si*";_{1-x}Ge_{x}/c-Si Heterojunction Solar Cells

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 191 - 194. - P. Hehenberger, W. Gös, O. Baumgartner, J. Franco, B. Kaczer, T. Grasser:

"*Quantum-Mechanical Modeling of NBTI in High-k SiGe MOSFETs*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 11 - 14. - T. Ikeda, H. Saito, F. Kawai, K. Hamada, T. Ohmine, H. Takada, V. Deshpande:

"*Development of SF*";_{6}/O_{2}/Si Plasma Etching Topography Simulation Model using New Flux Estimation Method

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 115 - 118. - T. Kamioka, H. Imai, T. Watanabe, K. Ohmori, K. Shiraishi, Y. Kamakura:

"*Impact of Channel Shape on Carrier Transport Investigated by Ensemble Monte Carlo/Molecular Dynamics Simulation*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 83 - 86. - H. Kasai, S. Aspera, H. Kishi, N. Awaya, S. Ohnishi, Y. Tamai:

"*First Principles Study on the Switching Mechanism in Resistance Random Access Memory Devices*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 211 - 214. - K. Kawabata, M. Tanizawa, K. Ishikawa, Y. Inoue, M. Inuishi, T. Nishimura:

"*Study of Current Induced Magnetic Domain Wall Movement with Extremely Low Energy Consumption by Micromagnetic Simulation*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 55 - 58. - H. Kim, J. You, D. Lee, T. Kim, K. Lee:

"*Enhancement of the device characteristics for nanoscale charge trap flash memory devices utilizing a metal spacer layer*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 203 - 206. - Y. Kitahara, D. Hagishima, K. Matsuzawa:

"*Reliability of NAND Flash Memories Induced by Anode Hole Generation in Floating-Gate*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 131 - 134. - S. Koba, H. Tsuchiya, M. Ogawa:

"*Wigner Monte Carlo Approach to Quantum and Dissipative Transport in Si-MOSFETs*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 79 - 82. - K. Kobinata, T. Nakayama:

"*Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 295 - 298. - P. Kulkarni, Q. Liu, A. Khakifirooz, Y. Zhang, K. Cheng, F. Monsieur, P. Oldiges:

"*Impact of Substrate Bias on GIDL for Thin-BOX ETSOI Devices*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 103 - 106. - E. Kwon, D. Oh, B. Lee, J.-H. Yi, S. Kim, G. Cho, S. Park, J. Choi:

"*An Abnormal Floating Gate Interference and a Low Program Performance in 2y nm NAND Flash Devices*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 207 - 210. - C.-K. Lin, C. Hsiao, W. Chan, M.-C. Jeng:

"*A Smart Approach for Process Variation Correlation Modeling*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 159 - 162. - J. Lorenz:

"*TCAD Challenges and some Fraunhofer Solutions*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 1 - 4. - A. Malinowski, M. Sekine, M. Hori, K. Ishikawa, H. Kondo, T. Suzuki, T. Takeuchi, H. Yamamoto, A. Jakubowski, L. Lukasiak:

"*Sticking coefficient of hydrogen radicals on ArF photoresist estimated by parallel plate structure in conjunction with numerical analysis*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 235 - 238. - A. Martinez, N. Seoane, M. Aldegunde, A. Asenov, J.R. Barker:

"*The Non-Equilibrium Green Function approach as a TCAD tool for future CMOS technology*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 95 - 98. - F. Mazzamuto, J. Saint-Martin, V. H. Nguyen, Y. Apertet, C. Chassat, P. Dollfus:

"*Nanostructuration of Graphene Nanoribbons for thermoelectric applications*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 223 - 226. - G. Milīnikov, N. Mori, Y. Kamakura:

"*Low-dimensional Quantum Transport Models in Atomistic Device Simulations*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 315 - 318. - H. Minari, T. Zushi, T. Watanabe, Y. Kamakura, N. Mori:

"*Effects of Atomic Disorder on Carrier Transport in Si Nanowire Transistors*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 27 - 30. - M. Miyake, S. Kusu, H. Kikuchihara, A. Tanaka, Y. Shintaku, M. Ueno, J. Nakashima, U. Feldmann, H.J. Mattausch, M. Mattausch:

"*The Flexible Compact SOI-MOSFET Model HiSIM-SOI Valid for Any Structural Types*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 167 - 170. - Y. Miyoshi, M. Ogawa, S. Souma, H. Nakamura:

"*Analysis of geometrical structure and transport property in InAs/Si heterojunction nanowire tunneling field effect transistors*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 227 - 230. - M. Mochizuki, H. Hayashi, S. Ishii, S. Ohira, I. Kurachi, N. Miura:

"*Accurate and global model of SOI H gate body-tied MOSFET for circuit simulator*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 247 - 250. - T. Nakahagi, D. Sugiyama, S. Yukuta, M. Miyake, M. Mattausch:

"*Modeling of Enhanced 1/f Noise in TFT with Trap Charges*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 171 - 174. - N. Neophytou, H. Kosina:

"*Strong Anisotropy and Diameter Effects on the Low-Field Mobility of Silicon Nanowires*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 31 - 34. - T. Numata, S. Uno, Y. Kamakura, N. Mori, K. Nakazato:

"*Fully Analytic Compact Model of Ballistic Gate-All-Around MOSFET with Rectangular Cross Section*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 39 - 42. - P. Oldiges, R. Muralidhar, P. Kulkarni, C.-H. Lin, K. Xiu, D. Guo, M. Bajaj, N. Sathaye:

"*Critical Analysis of 14nm Device Options*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 5 - 8. - D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:

"*Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 59 - 62. - T. Ota, H. Tsuji, Y. Kamakura, K. Taniguchi:

"*Characterization and Modeling of Self-Heating Effect on Transient Current Overshoot in Poly-Si TFTs Fabricated on Glass Substrate*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 255 - 258. - V. Peikert, A. Schenk:

"*A Wavelet Method to Solve High-dimensional Transport Equations in Semiconductor Devices*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 299 - 302. - D. Rideau, W. Zhang, Y.M. Niquet, C. Delerue, C. Tavernier, H. Jaouen:

"*Electron-phonon scattering in Si and Ge: from bulk to nanodevices*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 47 - 50. - F. Roger, J. Cambieri, R. Minixhofer:

"*A Novel Simulation Methodology for Development of ESD Primitives on a 0.18μm Analog, Mixed-Signal High Voltage Process Technology*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 179 - 181. - K. Rupp, T. Grasser, A. Jüngel:

"*Adaptive Variable-Order Spherical Harmonics Expansion of the Boltzmann Transport Equation*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 151 - 154. - K. Rupp, T. Grasser, A. Jüngel:

"*Parallel Preconditioning for Spherical Harmonics Expansions of the Boltzmann Transport Equation*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 147 - 150. - Y. Saitou, T. Nakamori, S. Souma, M. Ogawa:

"*Bridge-Function Pseudospectral Method for Quantum Mechanical Simulation of Nano-Scaled Devices*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 311 - 314. - F. Schanovsky, O. Baumgartner, T. Grasser:

"*Multi Scale Modeling of Multi Phonon Hole Capture in the Context of NBTI*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 15 - 18. - A. Schenk, R. Rhyner, M. Luisier, C. Bessire:

"*Analysis of Si, InAs, and Si-InAs Tunnel Diodes and Tunnel FETs Using Different Transport Models*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 263 - 266. - A. Scholze, S. Furkay, S.-D. Kim, S. Jain:

"*Exploring MOL Design Options for a 20nm CMOS Technology using TCAD*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 99 - 102. - C. Shen, D. Gong:

"*Inverse Modeling of sub-100nm MOSFET with PDE-Constrained Optimization*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 155 - 158. - C. Shen, Y. Li, I. Lo, P. Lin, S. Chung:

"*Modeling Temperature and Bias Stress Effects on Threshold Voltage for a-Si:H TFTs for Gate Driver Circuit Simulation*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 251 - 254. - X. Shen, S. Chong, D. Lee, R. Parsa, R. Howe, W. Wong:

"*2D Analytical Model for the Study of NEM Relay Device Scaling*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 243 - 246. - S. Sho, S. Odanaka:

"*Numerical Methods for A Quantum Energy Transport Model Arising in Scaled MOSFETs*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 303 - 306. - K. Sonoda, M. Tanizawa, K. Ishikawa, Y. Inoue:

"*Modeling Statistical Distribution of Random Telegraph Noise Magnitude*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 19 - 22. - Z. Stanojevic, M. Karner, K. Schnass, C. Kernstock, O. Baumgartner, H. Kosina:

"*A Versatile Finite Volume Simulator for the Analysis of Electronic Properties of Nanostructures*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 143 - 146. - I. Starkov, H. Ceric, S. Tyaginov, T. Grasser, H. Enichlmair, J. Park, C. Jungemann:

"*Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 127 - 130. - H. Takashino, M. Tanizawa, T. Okagaki, T. Hayashi, M. Taya, H. Ishida, K. Ishikawa, Y. Inoue:

"*Impact of Quantum Confinement on Stress induced nMOSFET Threshold Voltage Shift*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 107 - 110. - F. Torricelli, L. Colalongo, L. Milani, Z.M. Kovacs-Vajna, E. Cantatore:

"*Impact of Energetic Disorder and Localization on the Conductivity and Mobility of Organic Semiconductors*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 195 - 198. - H. Toshiyoshi:

"*A Spice-based Multi-physics Simulation Technique for Integrated MEMS*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 239 - 242. - S. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J. Park, C. Jungemann:

"*Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 123 - 126. - W.G. Vandenberghe, B. Soree, W. Magnus, G. Groeseneken, A.S. Verhulst, M.V. Fischetti:

"*Field Induced Quantum Confinement in Indirect Semiconductors: Quantum Mechanical and Modified Semiclassical Model*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 271 - 274. - J. Weinbub, J. Cervenka, K. Rupp, S. Selberherr:

"*High-Quality Mesh Generation Based on Orthogonal Software Modules*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 139 - 142. - X. Xiu:

"*Simulation of Channel Electron Mobility Due to Scattering with Interfacial Phonon-Plasmon Modes in Silicon Nanowire under the Presence of High-k Oxide and Metal Gate*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 35 - 38. - K. Yamaguchi, A. Otake, K. Kamiya, K. Shiraishi, Y. Shigeta:

"*First Principle Study of the Stability of H Atoms in SiN Layers on MONOS-Type Memories During Program/Erase Operations*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 215 - 218. - J. You, H. Kim, T. Kim, K. Lee:

"*Effect of the trap density and distribution of the silicon nitride layer on the retention characteristics of charge trap flash memory devices*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 199 - 202. - X. Yu, J. Zhang, J. Kang, Z. Yu, Y. Tan:

"*Study on Carrier Mobility in Graphene Nanoribbons*";

Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 219 - 222. - Z. Yuan, A. Nainani, X. Guan, W. Wong, K.C. Saraswat:

"*Tight-binding Study of Γ-L Bandstructure Engineering for Ballistic III-V nMOSFETs*";

Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "*Proc. of SISPAD*", (2011), 71 - 74.