A. Burenkov, P. Pichler, J. Lorenz, Y. Spiegel, J. Duchaine, F. Torregrosa: "Simulation of Plasma Immersion Ion Implantation"; Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 231 - 234.
Z. Essa, P. Boulenc, C. Tavernier, F. Hirigoyen, A. Crocherie, J. Michelot, D. Rideau: "3D TCAD Simulation of Advanced CMOS Image Sensors"; Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 187 - 190.
S. Hadi, A. Nayfeh, P. Hashemi, J. Hoyt: "a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells"; Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 191 - 194.
P. Hehenberger, W. Gös, O. Baumgartner, J. Franco, B. Kaczer, T. Grasser: "Quantum-Mechanical Modeling of NBTI in High-k SiGe MOSFETs"; Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 11 - 14.
P. Kulkarni, Q. Liu, A. Khakifirooz, Y. Zhang, K. Cheng, F. Monsieur, P. Oldiges: "Impact of Substrate Bias on GIDL for Thin-BOX ETSOI Devices"; Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 103 - 106.
T. Nakahagi, D. Sugiyama, S. Yukuta, M. Miyake, M. Mattausch: "Modeling of Enhanced 1/f Noise in TFT with Trap Charges"; Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 171 - 174.
P. Oldiges, R. Muralidhar, P. Kulkarni, C.-H. Lin, K. Xiu, D. Guo, M. Bajaj, N. Sathaye: "Critical Analysis of 14nm Device Options"; Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 5 - 8.