SISPAD 2007 Proceedings
- U. Aeberhard, R. Morf:
"Microscopic Modeling of Quantum Well Solar Cells";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 237 - 240. - Z. Aksamija, U. Ravaioli:
"Energy Conservation in Collisional Broadening";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 73 - 76. - A. Akturk, N. Goldsman, G. Pennington:
"Modeling Carbon Nanotube Electron-Phonon Resonances Shows Terahertz Current Oscillations";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 225 - 228. - M. Aldegunde, A. Garcia-Loureiro, P.V. Sushko, A.L. Shluger, K. Kalna, A. Asenov:
"Atomistic Mesh Generation for the Simulation of Semiconductor Devices";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 97 - 100. - Y. Ashizawa, H. Oka:
"Thin Body Effects to Suppress Random Dopant Fluctuations in Nanoscaled MOSFETs";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 93 - 96. - C.A. Awo-Affouda, M.O. Bloomfield, T.S. Cale:
"Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D IC Cu Vias";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 41 - 44. - K.H. Bach, R. Liebmann, M. Nawaz, C. Jungemann, E. Ungersboeck:
"Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 113 - 116. - E. Bahat-Treidel, V. Sidorov, J.H. Würfl, G. Tränkle:
"Simulation of AlGaN/GaN HEMTs Breakdown Voltage Enhancement Using Grating Field Plates";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 277 - 280. - A. Brannick, N.A. Zakhleniuk, B.K. Ridley, L.F. Eastman, J.R. Shealy, W.J. Schaff:
"Modeling of Hot Electron Effects in GaN/AlGaN HEMT with AlN Interlayer";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 281 - 284. - R. Brunetti, E. Piccinini:
"Upcoming Physics Challenges for Device Modeling";
Talk: Conference, Vienna, Austria (invited); 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 169 - 176. - F.M. Bufler, L. Sponton, R. Gautschi:
"3D Stress, Process and Device Simulation: Extraction of the Relevant Stress Tensor";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 117 - 120. - P. Castrillo, R. Pinacho, J.E. Rubio, L.M. Vega, M. Jaraiz:
"Atomistic Modeling of Defect Diffusion in SiGe";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 9 - 12. - S.M. Cea, A. Eremenko, P. Fleischmann, M.D. Giles, S. Halama, F.O. Heinz, A.N. Ivanov, P.H. Keys, A.D. Lilak:
"Challenges in 3D Process Simulation for Advanced Technology Understanding";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 361 - 364. - H. Ceric, A. Nentchev, E. Langer, S. Selberherr:
"Intrinsic Stress Build-Up during Volmer-Weber Crystal Growth";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 37 - 40. - J. Cervenka, H. Ceric, O. Ertl, S. Selberherr:
"Three-Dimensional Sacrificial Etching";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 433 - 436. - K.-B. Chang, W.-Y. Chung, S.-J. Kim, Y.-M. Ko, J.-J. Jang, T.-K. Kim, J.-K. Park, Y.-K. Park, M.-H. Yoo:
"Process Margin Analysis and Yield Enhancement through Statistical Topography Simulation";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 413 - 416. - B. Cheng, S. Roy, A. Asenov:
"Statistical Compact Model Parameter Extraction Strategy for Intrinsic Parameter Fluctuation";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 301 - 304. - Y. Cheng, I.M. Gamba, A. Majorana, C.W. Shu:
"Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 257 - 260. - M.-H. Chiang, J.-N. Lin, K. Kim, C.-T. Chuang:
"Asymmetrical Triple-Gate FET";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 389 - 392. - A. Di Carlo:
"Multiscale Simulation of Electronic and Optoelectronic Devices with TiberCAD";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 245 - 248. - O. Ertl, C. Heitzinger, S. Selberherr:
"Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 417 - 420. - C. Fiegna, M. Braccioli, S. Brugger, F.M. Bufler, P. Dollfus, V. Aubry-Fortuna, C. Jungemann, B. Meinerzhagen, P. Palestri, S. Galdin-Retailleau, E. Sangiorgi, A. Schenk, L. Selmi:
"Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 57 - 60. - W. Gös, T. Grasser:
"First-Principles Investigation on Oxide Trapping";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 157 - 160. - X. Guan, Y. Tan, J. Lu, L. Tian, Y. Wang, Z. Yu:
"A Self-Consistent Simulation of InSb Double-Gate MOSFETs Using Full-Band Tight-Binding Approach";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 161 - 164. - B.P. Harish, N. Bhat, M.B. Patil:
"Process Variation-Aware Estimation of Static Leakage Power in Nano CMOS";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 393 - 396. - T. Herrmann, W. Klix, R. Stenzel, S. Duenkel, R. Illgen, J. Höntschel, T. Feudel, M. Horstmann:
"Line Edge and Gate Interface Roughness Simulations of Advanced VLSI SOI MOSFETs";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 101 - 104. - L.M. Hillkirk, A.R. Hefner, R.W. Dutton, S.B. Bayne, H. O´Brien:
"Electrothermal, Transient, Mixed-Mode 2D Simulation Study of SiC Power Thyristors Operating under Pulsed Power Conditions";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 181 - 184. - T. Hiramoto, K. Miyaji, M. Kobayashi:
"Transport in Silicon Nanowire and Single-Electron Transistors";
Talk: Conference, Vienna, Austria (invited); 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 209 - 216. - K. Hirose, N. Kobayashi, H. Ishii:
"Ab-Initio Calculations of the Transport through Single Molecules and Carbon Nanotubes";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 429 - 432. - A. Hössinger, Z. Djuric, A. Babayan:
"Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 53 - 56. - S.-M. Hong, H.-H. Park, C.H. Park, M.J. Lee, H.S. Min, Y.-J. Park:
"Physics-Based Simulation of 1/f Noise in MOSFETs under Large-Signal Operation";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 89 - 92. - C. Hu, M. Dunga, C.-H. Lin, D. Lu, A. Niknejad:
"Compact Modeling for New Transistor Structures";
Talk: Conference, Vienna, Austria (invited); 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 285 - 288. - L.P. Huang, K.C. Ku, Y. Sheu, C.F. Nieh, C.H. Chen, H. Chang, L.T. Wang, T.L. Lee, C.-C. Wang, C.H. Diaz:
"Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 33 - 36. - B. Hwang, Y. Lee, J.-G. Min, H. Shin, N. Lim, S. Kim, W.-Y. Chung, T-K. Kim, J.-H. Park, Y.-K. Lee, D. Kwak, J. Park, W.-S. Lee:
"Modeling of Re-Sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nm Node Technology";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 45 - 48. - T. Ichikawa, T. Takase, N. Tamaoki:
"Modeling of Deposition during C5F8/CO/O2/Ar Plasma Etching Using Topography and Composition Simulation";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 425 - 428. - M.-A. Jaud, S. Barraud, J. Saint-Martin, A. Bournel, P. Dollfus, H. Jaouen:
"Pearson Effective Potential versus Multi-Subband Monte Carlo Simulation for Electron Transport in DG n-MOSFETs";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 65 - 68. - S. Jin, M.V. Fischetti, T.-W. Tang:
"Surface Roughness Scattering in Ultrathin Body SOI MOSFETs";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 61 - 64. - C. Jungemann:
"Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 69 - 72. - J. Kim, C.-Y. Chen, R.W. Dutton:
"A Simple Technique for the Monte Carlo Simulation of Transport in Quantum Wells";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 77 - 80. - S.-D. Kim, B. Yang, S. Narasimha, A. Waite, K. Nummy, L. Black, H. Yin, S. Luning:
"Modeling and Extraction of Effective Lateral Doping Profile Using the Relation of On-Resistance versus Overlap Capacitance in (100) and (110)-Oriented MOSFETs";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 405 - 408. - Y.-K. Kim, S.-Y. Park, T. Won:
"Ab-Initio Calculations of Indium Migration in Uniaxial Strained Silicon";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 441 - 444. - U. Knipper, F. Pfirsch, T. Raker, J. Niedermeyr, G. Wachutka:
"Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge Termination Structures";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 189 - 192. - H. Kosina, O. Triebl, T. Grasser:
"Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 317 - 320. - T. Krishnamohan, D. Kim, C. Jungemann, A.T. Pham, B. Meinerzhagen, Y. Nishi, K.C. Saraswat:
"High-Performance, Strained Ge, Heterostructure p-MOSFETs";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 21 - 24. - N. Kusunoki, N. Yasutake, M. Awano, I. Mizushima, H. Yoshimura, S. Yamada, F. Matsuoka:
"Impact of Two-Step Recessed SiGe S/D Engineering for Advanced p-MOSFETs of 32nm Technology Node and Beyond";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 121 - 124. - L. Larcher, A. Padovani, P. Pavan, I. Rimmaudo, A. Calderoni, G. Molteni, F. Gattel, P. Fantini:
"Modeling NAND Flash Memories for Circuit Simulations";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 293 - 296. - L. Li, G. Meller, H. Kosina:
"Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 377 - 380. - Y. Li, C.-H. Hwang, S.-M. Yu, H.-M. Huang, T.-C. Yeh, H.-W. Cheng, H.-M. Chen, J.-R. Hwang, F.-L. Yang:
"Characteristic Fluctuation Dependence on Discrete Dopants for 16nm SOI FinFETs at Different Temperature";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 365 - 368. - T.D. Linton Jr., K. Foley, F.O. Heinz, R. Kotlyar, P. Matagne, A. Eremenko, S. Sergienko, M. Stettler, M.D. Giles, B. Voinov:
"MDS - A New, Highly Extensible Device Simulator";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 341 - 344. - J. Liu, G. Du, J. Cao, Z. Xia, Y. Wang, R. Han, X. Liu:
"Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 253 - 256. - H.-Y. Lo, Y. Li, H.-Y. Chao, C.-H. Tsai, F.-M. Pan, M.-C. Chiang, T.-C. Kuo, C.-N. Mo:
"Numerical Simulation of Field Emission in the Surface Conduction Electron-Emitter Display";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 233 - 236. - M. Luisier, A. Schenk, W. Fichtner:
"Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 221 - 224. - W. Magnus, B. Soree, G. Pourtois, S. Compernolle:
"A Simplified Quantum Mechanical Model for the Electron Distribution in a Si Nanowire";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 321 - 324. - S. Markov, N. Barin, C. Fiegna, S. Roy, E. Sangiorgi, A. Asenov:
"Analysis of Silicon Dioxide Interface Transition Region in MOS Structures";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 149 - 152. - L.A. Marques, L. Pelaz, I. Santos, P. Lopez, M. Aboy:
"Molecular Dynamics Modeling of Octadecaborane Implantation into Si";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 17 - 20. - A. Martinez-Limia, C. Steen, P. Pichler, N. Gupta, W. Windl, S. Paul:
"Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 13 - 16. - T. Maruizumi, J. Ushio, Y. Shiraki:
"Molecular Orbital Examination of Negative Bias Temperature Instability Mechanism";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 409 - 412. - G. Meller, L. Li, S. Holzer, H. Kosina:
"Dynamic Monte Carlo Simulation of an Amorphous Organic Device";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 373 - 376. - H. Minari, N. Mori:
"Crystalline Orientation Effects on Ballistic Hole Current in Ultrathin DG SOI MOSFETs";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 229 - 232. - A. Nakajima, K. Itagaki, K. Horio:
"Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 265 - 268. - M. Nawaz, S. Decker, L.-F. Giles, W. Molzer, T. Schulz, A. Schrüfer, R. Mahnkopf:
"Device Design Evaluation of Multigate FETs Using Full 3D Process and Device TCAD Simulation";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 401 - 404. - O. Nayfeh, D.A. Antoniadis:
"Calibrated Hydrodynamic Simulation of Deeply Scaled Well-Tempered Nanowire Field Effect Transistors";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 305 - 308. - A. Nentchev, S. Selberherr:
"On the Magnetic Field Extraction for On-Chip Inductance Calculation";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 349 - 352. - N. Neophytou, A. Paul, M.S. Lundstrom, G. Klimeck:
"Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 217 - 220. - H.-N. Nguyen, H.C. d´Honincthu, C. Chapus, A. Bournel, S. Galdin-Retailleau, P. Dollfus, N. Locatelli:
"Monte Carlo Modeling of Schottky Contacts on Semiconducting Carbon Nanotubes";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 313 - 316. - Y. Ohkura, C. Suzuki:
"Monte Carlo Study on Number of Scattering Events for Quasi-Ballistic Transport in MOSFETs";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 197 - 200. - T. Okada, A. Fathurahman, R. Takeda, H. Banba, H. Kubota, Y. Matsushita, M. Naito, S. Nakamura:
"A Prototype Wafer Processing TCAD Tool Composed of BMD Simulation Module, Metal Gettering and Thermal Stress/Slip Functions for Scaled Device Design Phase";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 133 - 136. - L. Oniciuc, P. Andrei:
"RDF Analysis of Small-Signal Equivalent Circuit Parameters in MOSFET Devices";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 449 - 452. - H.-H. Park, S.-M. Hong, S. Jin, H.S. Min, Y.-J. Park:
"Noise Simulation of Nanoscale Devices Based on the Non-Equilibrium Green´s Function Formalism";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 445 - 448. - J.- M. Park, H. Enichlmair, R. Minixhofer:
"Hot Carrier Behaviour of a 0.35μm High-Voltage n-Channel LDMOS Transistor";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of. SISPAD", (2007), 978-3-211-72860-4; 369 - 372. - A. Pecchia, G. Penazzi, A. Di Carlo:
"Efficient Green´s Function Algorithms for Atomistic Modeling of Si Nanowire FETs";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 325 - 328. - A.T. Pham, C. Jungemann, B. Meinerzhagen:
"Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 193 - 196. - P. Pichler:
"Upcoming Challenges for Process Modeling";
Talk: Conference, Vienna, Austria (invited); 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 81 - 88. - M.R. Pinto:
"Nanomanufacturing Technology and Opportunities through Physically-Based Simulation";
Talk: Conference, Vienna, Austria (invited); 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 1 - 8. - V.M. Polyakov, F. Schwierz:
"EMC Simulation of THz Emission from Semiconductor Devices";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 353 - 356. - C. Populaire, D. Villanueva, S. Orain, H. Brillet-Rouxel:
"Strained Contact Etch Stop Layer Integration: Geometry Design Impact";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 421 - 424. - S. Potbhare, N. Goldsman, G. Pennington, A. Akturk, A. Lelis:
"Transient Characterization of Interface Traps in 4H-SiC MOSFETs";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 177 - 180. - M. Pourfath, H. Kosina:
"The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 309 - 312. - M.A. Pourghaderi, W. Magnus, B. Soree, M. Meuris, M. Heyns, K. De Meyer:
"Study of the Junction Depth Effect on Ballistic Current Using the Subband Decomposition Method";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 205 - 208. - P.-Y. Prodhomme, P. Blaise, F. Fontaine-Vive, J. Even, M. Orlowski:
"Atomistic Study of Metal/High-K Interface";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 437 - 440. - D. Rideau, E. Batail, S. Monfray, C. Tavernier, H. Jaouen:
"Modeling Study of Ultrathin Ge Layers Using Tight-Binding, LCBB and k·p Methods";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 145 - 148. - F. Sacconi, A. Pecchia, M. Povolotskyi, A. Di Carlo, J.M. Jancu:
"Tunneling Properties of MOS Systems Based on High-Κ Oxides";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 153 - 156. - N. Sadachika, H. Oka, R. Tanabe, T. Murakami, H.J. Mattausch, M. Miura-Mattausch:
"Compact Double-Gate MOSFET Model Correctly Predicting Volume-Inversion Effects";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 289 - 292. - T. Sadi, R.W. Kelsall:
"Electrothermal Monte Carlo Study of Charge Confinement in GaN HFETs";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 269 - 272. - W. Schoenmaker, P. Meuris, E. Janssens, K.-J. van der Kolk, N. van der Meijs, W.H. Schilders:
"Maxwell Equations on Unstructured Grids Using Finite-Integration Methods";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 333 - 336. - I. Semenikhin, E. Vostrikova, A. Ivanov, V. Ryzhii:
"Modeling of Shock Waves in Two-Dimensional Electron Channels: Effect of Tsunami";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 261 - 264. - A.Y. Serov, S.-M. Hong, Y.-J. Park, H.S. Min:
"Surface-Potential-Based Compact Model for Quantum Effects in Planar and Double-Gate MOSFET";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 297 - 300. - T. Shimada, S. Odanaka:
"Adaptive Time Discretization for a Transient Quantum Drift-Diffusion Model";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 337 - 340. - J. Shimokawa, T. Enda, N. Aoki, H. Tanimoto, S. Ito, Y. Toyoshima:
"Modeling of NBTI Degradation for SiON p-MOSFET";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 141 - 144. - Y. Song, G. Du, J. Yang, R. Jin, R. Han, K.-H. Lee, X. Liu:
"Influence of the Poole-Frenkel Effect on Programming and Erasing in Charge Trapping Memories";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 345 - 348. - K. Sonoda, A. Sakai, M. Moniwa, K. Ishikawa, O. Tsuchiya, Y. Inoue:
"Compact Modeling of Phase-Change Memories";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 137 - 140. - L. Sponton, L. Bomholt, W. Fichtner:
"Analysis of Process-Geometry Modulations through 3D TCAD";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 385 - 388. - K. Suzuki, Y. Ito, H. Miura:
"Influence of Oxygen Composition and Carbon Impurity on Electronic Reliability of HfO2";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 165 - 168. - V.A. Sverdlov, G. Karlowatz, E. Ungersboeck, H. Kosina:
"Influence of Uniaxial (110) Stress on the Silicon Conduction Band Structure: Stress Dependence of the Non-Parabolicity Parameter";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 329 - 332. - H. Takashino, T. Okagaki, T. Uchida, T. Hayashi, M. Tanizawa, E. Tsuda, K. Eikyu, S. Wakahara, K. Ishikawa, O. Tsuchiya, Y. Inoue:
"Impact of Shear Strain and Quantum Confinement on (110) Channel n-MOSFET with High-Stress CESL";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 105 - 108. - H. Takeda, T. Ikezawa, M. Kawada, M. Hane:
"Strain Induced Drain-Current Enhancement Mechanism in Short Channel Bulk Ge p-MOSFETs with Different Channel and Surface Orientations";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 25 - 28. - R. Tanabe, H. Anzai, Y. Ashizawa, H. Oka:
"The Optimization of Low Power Operation SRAM Circuit for 32nm Node";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 397 - 400. - J.-L. Thobel, O. Bonno, F. Dessenne:
"Monte Carlo Simulation of Time-Dependent Operation of Quantum Cascade Lasers";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 241 - 244. - E.-H. Toh, G.H. Wang, L. Chang, G. Samudra, Y.-C. Yeo:
"Device Design and Scalability of an Impact Ionization MOS Transistor with an Elevated Impact Ionization Region";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 129 - 132. - E. Tsukuda, Y. Kamakura, H. Takashino, T. Okagaki, T. Uchida, T. Hayashi, M. Tanizawa, K. Eikyu, S. Wakahara, K. Ishikawa, S. Tsuchiya, Y. Inoue, K. Taniguchi:
"Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm Node p-MOSFETs";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 29 - 32. - M. Vasicek, M. Karner, E. Ungersboeck, M. Wagner, H. Kosina, T. Grasser:
"Modeling of Macroscopic Transport Parameters in Inversion Layers";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 201 - 204. - S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr:
"Hydrodynamic Modeling of AlGaN/GaN HEMTs";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 273 - 276. - C.C. Wang, K.-S. Chang-Liao, C.-Y. Lu, T.-K. Wang:
"Enhanced Band-to-Band Tunneling-Induced Hot Electron Injection in p-Channel Flash by SiGe Channel and HfO2 Tunnel Dielectric";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 357 - 360. - R. Wang, J. Zhuge, R. Huang:
"Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors";
Poster: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 381 - 384. - X. Wang, A. Bryant, O. Dokumaci, P. Oldiges, W. Haensch:
"Simulation Study of Multiple FIN FinFET Design for 32nm Technology Node and Beyond";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 125 - 128. - H. Watanabe:
"Hopping Transport of Electrons via Si Dot";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 249 - 252. - D. Werber, G. Wachutka:
"Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 185 - 188. - S. Yamakawa, J. Wang, Y. Tateshita, K. Nagano, M. Tsukamoto, H. Ohri, N. Nagashima, H. Ansai:
"Analysis of Novel Stress Enhancement Effect Based on Damascene Gate Process with eSiGe S/D for pFETs";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 109 - 112. - J. Zhang, W. Xiong, M.-C. Tsai, Y. Wang, Z. Yu:
"Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT)";
Talk: Conference, Vienna, Austria; 2007-09-25 - 2007-09-27; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 49 - 52.