SISPAD 2004 Proceedings

• N. Akil, R. Van Langevelde, P. Goarin, M. Van Duuren, M. Slotboom:
  "SPICE-Compatible Macro Model for Split-Gate Compact NVM Cell with Various Gap Sizes";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 263 - 267.
  
  
• A. Akturk, G. Pennington, N. Goldsman:
  "Numerical Performance Analysis of Carbon Nanotube (CNT) Embedded MOSFETs";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 153 - 156.
  
  
• C. Alexander, A. R. Brown, J.R. Watling, A. Asenov:
  "Impact of Scattering on Random Dopant Induced Current Fluctuations in Decanano MOSFETs";
  Talk: Conference, Munich, Germany; 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 223 - 226.
  
  
• T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
  "Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 295 - 298.
  
  
• E. Bär, J. Lorenz, H. Rysse:
  "3D Feature-Scale Simulation of Sputter Etching with Coupling to Equipment Simulation";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 339 - 342.
  
  
• M.O. Bloomfield, T.S. Cale:
  "Simulation of Microstructure Formation during Thin Film Deposition";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 323 - 326.
  
  
• F.M. Bufler, A. Schenk, W. Fichtner:
  "Scalability of FinFETs and Unstrained Si/Strained Si FDSOI MOSFETs";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 195 - 198.
  
  
• A. Burenkov, J. Lorenz:
  "3D Simulation of Process Effects Limiting FinFET Performance and Scalability";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 125 - 128.
  
  
• H. Ceric, R. Sabelka, S. Holzer, W. Wessner, M. Wagner, S. Selberherr:
  "The Evolution of the Resistance and Current Density during Electromigration";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 331 - 334.
  
  
• S. Chakravarthi, P.R. Chidambaram, B. Hornung, C.F. Machala:
  "Continuum Modeling of Indium to Predict SSR Profiles";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 49 - 52.
  
  
• L. Chang, M.-K. Ieong, M. Yang:
  "CMOS Circuit Performance Enhancement by Surface Orientation Optimization";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 57 - 60.
  
  
• M. Choi, C. Jia, L. Milor:
  "Simulation of Lithography-Caused Gate Length and Interconnect Linewidth Variational Impact on Circuit Performance in Nanoscale Semiconductor";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 243 - 246.
  
  
• D. Choudhary, J. Catherwood, P. Clancy, C.S. Murthy:
  "Understanding the Role of Strain in SiGe Devices";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 203 - 206.
  
  
• J.-H. Chun, C.-H. Choi, R.W. Dutton:
  "Electrothermal Simulations of Strained Si MOSFETs under ESD Conditions";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 207 - 210.
  
  
• C. Claeys, E. Simoen:
  "Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes";
  Talk: Conference, Munich, Germany (invited); 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 181 - 190.
  
  
• M. Diebel, S. Chakravarthi, S.T. Dunham, C.F. Machala:
  "Ab-Initio Calculations to Predict Stress Effects on Boron Solubility in Silicon";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 37 - 40.
  
  
• D. Esseni, P. Palestri:
  "Full-Band and Approximated Solutions of the Schrödinger Equation in Silicon Inversion Layers";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 17 - 20.
  
  
• T. Ezaki, H. Nakamura, T. Yamamoto, K. Takeuchi, M. Hane:
  "Theoretical Analysis of Stress and Surface Orientation Effects on Inversion Carrier Mobility";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 53 - 56.
  
  
• E. Fuchs, P. Dollfus, G. Lecarval, E. Robilliart, S. Barraud, D. Villanueva, H. Jaouen:
  "A New Backscattering Model for Nano-MOSFET Compact Modeling";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 251 - 254.
  
  
• T. Fühner, A. Erdmann, C.J. Ortiz, J. Lorenz:
  "Genetic Algorithm for Optimization and Calibration in Process Simulation";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 347 - 350.
  
  
• O. Fujii, H. Yoshimura, R. Hasumi, T. Sanuki, H. Oyamatsu, F. Matsuoka, T. Noguchi:
  "Modeling of Stress Induced Layout Effect on Electrical Characteristics of Advanced MOSFETs";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 61 - 64.
  
  
• A. Gehring, S. Selberherr:
  "On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 25 - 28.
  
  
• E. Gnani, F. Ghidoni, M. Rudan:
  "Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 343 - 346.
  
  
• T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
  "Advanced Transport Models for Sub-Micrometer Devices";
  Talk: Conference, Munich, Germany (invited); 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 1 - 8.
  
  
• T. Grasser, H. Kosina, S. Selberherr:
  "On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 109 - 112.
  
  
• G. Groos, N. Jensen, M. Denison, M. Stecher:
  "Simulation of the Cross-Coupling among Snap Back Devices under Transient High Current Stress";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 211 - 214.
  
  
• A. Hössinger, R. Minixhofer, S. Selberherr:
  "Full Three-Dimensional Analysis of a Non-Volatile Memory Cell";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 129 - 132.
  
  
• A. Horn, G. Wachutka:
  "Three-Dimensional Simulation of Orientation-Dependent Wet Chemical Etching";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 133 - 136.
  
  
• G. Iannaccone, G. Curatola, G. Fiori:
  "Effective Bohm Quantum Potential for Device Simulators Based on Drift-Diffusion and Energy Transport";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 275 - 278.
  
  
• A. Icaza Deckelmann, G. Wachutka, J. Krumrey, F. Hirler:
  "Simulation of the Failure Mechanism of Power DMOS Transistors under Avalanche Stress";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 215 - 218.
  
  
• T. Ishihara, J. Koga, S. Takagi:
  "Comprehensive Understanding of Carrier Mobility in MOSFETs with Oxynitrides and Ultrathin Gate Oxides";
  Talk: Conference, Munich, Germany (invited); 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 173 - 180.
  
  
• C. Ito, O. Tornblad, S. Ma, R.W. Dutton:
  "A New Methodology for Efficient and Reliable Large-Signal Analysis of RF Power Devices";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 367 - 370.
  
  
• W. Jacobs, A. Kersch, G. Prechtl, G. Schulze Icking-Konert:
  "Modeling CVD Effects in Atomic Layer Deposition on the Feature Scale";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 137 - 140.
  
  
• J. Jang, R.W. Dutton:
  "Small-Signal Modeling of RF CMOS";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 371 - 374.
  
  
• S. Jin, J.-H. Yi, Y.-J. Park, H.S. Min:
  "A Monte Carlo Method for Distribution of Standby Currents and its Application to DRAM Retention Time";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 315 - 318.
  
  
• C. Jungemann, B. Neinhüs, C. D. Nguyen, B. Meinerzhagen:
  "Impact of the Floating Body Effect on Noise in SOI Devices Investigated by Hydrodynamic Simulation";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 235 - 238.
  
  
• Y. Kanegae, H. Moriya, T. Iwasaki:
  "Strain Optimization to Reduce Gate Leakage Current in MOS Transistors with Silicon Oxynitride Gate Dielectrics by Use of First-Principles Calculations";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 73 - 76.
  
  
• S.-D. Kim, J.B. Johnson, J. Yuan, J.C.S. Woo:
  "Optimization of Recessed and Elevated Silicide Source/Drain Contact Structure Using Physical Compact Resistance Modeling and Simulation in Ultrathin Body SOI MOSFETs";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 247 - 250.
  
  
• G. Klimeck:
  "NEMO-1D: The First NEGF-Based TCAD Tool";
  Talk: Conference, Munich, Germany (invited); 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 9 - 12.
  
  
• T. Krishnamohan, C. Jungemann, K.C. Saraswat:
  "Very High Performance, Sub-20nm, Strained Si and Si_x Ge_1-x, Heterostructure, Center Channel (CC) NMOS and PMOS DGFETs";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 191 - 194.
  
  
• Z. Krivokapic, V. Moroz:
  "Implications of Gate Misalignment for Ultra-Narrow Multigate Devices";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 85 - 88.
  
  
• Z. Krivokapic, Q. Xiang, M.-R. Lin:
  "Strain Scaling for Ultrathin Silicon NMOS Devices";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 299 - 302.
  
  
• C. Le Royer, G. Le Carval, M. Sanquer:
  "SET Accurate Compact Model for SET-MOSFET Hybrid Circuit Simulation";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 268 - 270.
  
  
• J. Li, R. Hull, R. Yang, V. Hou, C. Mouli:
  "Three-Dimensional Characterization and Modeling of Stress Distribution in High-Density DRAM Memory Cells";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 69 - 72.
  
  
• Y. Li, J.-W. Lee, H.-M. Chou:
  "Comparison of Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 307 - 310.
  
  
• M. Lorenzini, D. Wellekens, L. Haspeslagh, J. Van Houdt:
  "Source-Side Injection Modeling by Means of the Spherical Harmonics Expansion of the BTE";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 89 - 92.
  
  
• F. Matsuoka, H. Sakuraba, F. Masuoka:
  "An Analysis of the Effect of Surrounding Gate Structure on Soft Error Immunity";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 355 - 358.
  
  
• K. Matsuzawa, N. Sano:
  "Stable Simulation of Impurity Fluctuation for Contact Resistance and Schottky Diodes";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 231 - 234.
  
  
• I.D. Mayergoyz, P. Andrei:
  "Analysis of Random Doping and Oxide Thickness Induced Fluctuations in Nanoscale Semiconductor Devices through Poisson-Schrödinger Computations";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 227 - 230.
  
  
• Y. Miyamoto:
  "Defect and Carrier Dynamics in Nanotubes under Electronic Excitations: Time-Dependent Density Functional Approaches";
  Talk: Conference, Munich, Germany (invited); 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 141 - 148.
  
  
• J. Mohrhof, D. Silber:
  "Experiments on Minority Carrier Diffusion in Silicon: Contribution of Excitons";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 287 - 290.
  
  
• G. Mugnaini, G. Iannaccone:
  "Proposal of Physics-Based Compact Model for Nanoscale MOSFETs Including the Transition from Drift-Diffusion to Ballistic Transport";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 363 - 366.
  
  
• D. Navarro, N. Nakayama, K. Machida, S. Takeda, Y. Chiba, H. Ueno, H.J. Mattausch, M. Miura-Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, S. Miyamoto:
  "Modeling of Carrier Transport Dynamics at GHz-Frequencies for RF Circuit-Simulation";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 259 - 262.
  
  
• O. Nayfeh, S. Yu, D.A. Antoniadis:
  "On the Relationship between Carrier Mobility and Velocity in Sub-50nm MOSFETs via Calibrated Monte Carlo Simulation";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 117 - 120.
  
  
• P. Nguyen, A. Burenkov, J. Lorenz:
  "Adaptive Surface Triangulations for 3D Process Simulation";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 161 - 164.
  
  
• M. Ogawa, N. Kagotani, M. Ohta, T. Miyoshi:
  "Quantum Mechanical Simulation in DG MOSFETs Based on a Tight Binding Green's Function Formalism";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 29 - 32.
  
  
• P. Oldiges, C.S. Murthy:
  "Examination of Spatial Frequency Dependence of Line Edge Roughness on MOS Device Characteristics";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 239 - 242.
  
  
• Q. Ouyang, T. Ning:
  "Simulation Study of Simple CMOS-Compatible Thin SOI Vertical Bipolar Transistors on Thin BOX with an Inversion Collector";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 77 - 80.
  
  
• A. Pakfar, P. Holliger, A. Poncet, C. Fellous, D. Dutartre, T. Schwartzmann, H. Jaouen:
  "Modeling Dopant Diffusion in SiGe and SiGeC Layers";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 45 - 48.
  
  
• A. Pethe, T. Krishnamohan, K. Uchida, K.C. Saraswat:
  "Analytical Modeling of Ge and Si Double-Gated (DG) NFETs and the Effect of Process Induced Variations (PIV) on Device Performance";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 359 - 362.
  
  
• J. Piprek:
  "Simulation of GaN-Based Light-Emitting Devices";
  Talk: Conference, Munich, Germany (invited); 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 101 - 108.
  
  
• M. Pourfath, E. Ungersboeck, A. Gehring, B.H. Cheong, H. Kosina, S. Selberherr:
  "Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 149 - 152.
  
  
• J. Racko, D. Donoval, P. Kudela, G. Wachutka:
  "Modeling and Simulation of Combined Thermionic Emission-Tunneling Current through Interfacial Isolation Layer";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 283 - 286.
  
  
• L. Radic, A.F. Saavedra, M.E. Law:
  "Modeling B Uphill Diffusion in the Presence of Ge";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 33 - 36.
  
  
• M. Rudan, E. Gnani, S. Reggiani, G. Baccarani:
  "The Density-Gradient Correction as a Disguised Pilot Wave of de Broglie";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 13 - 16.
  
  
• M. Rudan, G. Perroni:
  "A Method for Determining the Screening Length of the Coulombic Scattering in Non-Degenerate and Degenerate Semiconductors";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 121 - 124.
  
  
• B. Ruhstaller, T.A. Beierlein, R. Gmür, S. Karg, H. Riel, G. Sartoris, H. Schwarzenbach, W. Riess:
  "Parameter Extraction and Validation of an Electronic and Optical Model for Organic Light-Emitting Devices";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 157 - 160.
  
  
• N. Sadachika, Y. Uetsuji, D. Kitamaru, H.J. Mattausch, M. Miura-Mattausch, L. Weiss, U. Feldmann, S. Baba:
  "Fully-Depleted SOI MOSFET Model for Circuit Simulation and its Application to 1/f Noise Analysis";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 255 - 258.
  
  
• A. Schenk:
  "A Local Mobility Model for Ultrathin DGSOI n-MOSFETs";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 113 - 116.
  
  
• X. Shao, Z. Yu:
  "A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 21 - 24.
  
  
• A. Sleiman, A. Di Carlo, G. Verzellesi, G. Meneghesso, E. Zanoni:
  "Current Collapse Associated with Surface States in GaN-Based HEMTs: Theoretical/Experimental Investigations";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 81 - 84.
  
  
• N. Subba, S. Luning, C. Riccobene, T. Feude, A. Wei, M. Horstmann:
  "Optimal Contact Placement in Partially Depleted SOI with Application to Raised Source-Drain Structures";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 319 - 322.
  
  
• V. Sukharev, R. Choudhury, C. W. Park:
  "3D Physically Based Electromigration Simulation in Copper Low-Κ Interconnect";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 335 - 338.
  
  
• R. Tanabe, Y. Ashizawa, H. Oka:
  "CMOS Scaling Analysis Based on ITRS Roadmap by Three-Dimensional Mixed-Mode Device Simulation";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 303 - 306.
  
  
• R. Thalhammer, S. Marksteiner:
  "Optimization of BAW Resonator Performance Using Combined Simulation Techniques";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 97 - 100.
  
  
• Y. Tosaka, S. Satoh, T. Okada, H. Oka:
  "An Accurate and Comprehensive Soft Error Simulator NISES II";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 219 - 222.
  
  
• T. Toyabe:
  "Single-Ion and Multi-Ion MOSFETs Simulation with Density Gradient Model";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 279 - 282.
  
  
• M. Uematsu, H. Kageshima, K. Shiraishi:
  "Effect of Stress on Pattern-Dependent Oxidation of Silicon Nanostructures";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 327 - 330.
  
  
• S. Wagner, T. Grasser, S. Selberherr:
  "Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 351 - 354.
  
  
• C.-C. Wang, T.Y. Huang, Y. Sheu, R. Duffy, A. Heringa, N.E. Cowern, P.B. Griffin, C.H. Diaz:
  "Boron Diffusion in Strained and Strain-Relaxed SiGe";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 41 - 44.
  
  
• P. Wang, T. Nirsch, D. Schmitt-Landsiedel, W. Hansch:
  "Investigation of a Novel Tunneling Transistor by MEDICI Simulation";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 93 - 96.
  
  
• X. Wang, H. Shang, P. Oldiges, K. Rim, S. Koester, M.-K. Ieong:
  "Hole Mobility Enhancement Modeling and Scaling Study for High Performance Strained Ge Buried Channel p-MOSFETs";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 65 - 68.
  
  
• K. Watanabe, T. Hamada, K. Kotani, A. Teramoto, S. Sugawa, T. Ohmi:
  "Accurate Temperature Drift Model of MOSFETs Mobility for Analog Circuits";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 291 - 294.
  
  
• W. Wessner, C. Hollauer, A. Hössinger, S. Selberherr:
  "Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 165 - 168.
  
  
• R. Wittmann, A. Hössinger, S. Selberherr:
  "Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 169 - 172.
  
  
• H. Yamazaki, H. Sakuraba, F. Masuoka:
  "Numerical Analysis for the Structure Dependence on the Subthreshold Slope of Floating Channel Type SGT (FC-SGT) Flash Memory";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 311 - 314.
  
  
• L. Yang, J.R. Watling, A. Asenov, J.R. Barker, S. Roy:
  "Device Performance in Conventional and Strained Si n-MOSFETs with High-Κ Gate Stacks";
  Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 199 - 202.
  
  
• D. Zhang, G. Zhu, H. Zhang, L. Tian, Y. Zhiping:
  "2D Quantum Mechanical (QM) Charge Model and its Application to Ballistic Transport of Sub-50nm Bulk Silicon MOSFETs";
  Poster: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 271 - 274.