SISPAD 2003 Proceedings

• N.B. Abdallah, E. Polizzi, M. Mouis, F. Mehats:
  "Simulation of 2D Quantum Transport in Ultra-Short DG MOSFETs: A Fast Algorithm Using Subbands";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 267 - 270.
  
  
• M. Aboy, L. Pelaz, L.A. Marques, J. Barbolla, A. Mokhberi, Y. Takamura, P.B. Griffin, J.D. Plummer:
  "Atomistic Modeling of B Activation and Deactivation for Ultra-Shallow Junction Formation";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 151 - 154.
  
  
• A. Akturk, N. Goldsman, G. Metze:
  "Coupled Modeling of Time-Dependent Full-Chip Heating and Quantum Non-Isothermal Device Operation";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 311 - 314.
  
  
• M.G. Ancona, J.B. Boos, N. Papanicolaou, W. Chang, B.R. Bennett, D. Park:
  "Modeling Gate Leakage in InAs/AlSb HEMTs";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 295 - 298.
  
  
• P. Andrei, I.D. Mayergoyz:
  "Analysis of Fluctuations in Ultra-Small Semiconductor Devices";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 95 - 98.
  
  
• J. Ankarcrona, K.-H. Eklund, L. Vestling, J. Olsson:
  "Analysis and Improvements of High Frequency Substrate Losses for RF MOSFETs";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 319 - 322.
  
  
• N.D. Arora:
  "Modeling and Characterization of Copper Interconnects for SoC Design";
  Talk: Conference, Boston, USA (invited); 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 1 - 6.
  
  
• M.J. Aziz:
  "Dopant Diffusion under Pressure and Stress";
  Talk: Conference, Boston, USA (invited); 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 137 - 142.
  
  
• N.T. Bagraev, B.S. Pavlov, A.M. Yafyasov:
  "Resonance Quantum Switch: Search of Working Parameters";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 275 - 278.
  
  
• E.P. Blair, C.S. Lent:
  "Quantum-Dot Cellular Automata: An Architecture for Molecular Computing";
  Talk: Conference, Boston, USA (invited); 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 14 - 18.
  
  
• M.O. Bloomfield, Y.H. Im, T.S. Cale:
  "Microstructure Development and Evolution";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 19 - 22.
  
  
• J. Bonnouvrier, D. Lenoble, E. Robilliart, T. Schwartzmann, H. Jaouen:
  "Simulation of Surface Engineering for Ultra Shallow Junction Formation of PMOS for the 90nm CMOS Technology Node and Beyond";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 159 - 162.
  
  
• S. Chakravarthi, P. Kohli, P.R. Chidambaram, H. Bu, A. Jain, B. Hornung, C.F. Machala:
  "Modeling the Effect of Source/Drain Sidewall Spacer Process on Boron Ultra Shallow Junctions";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 159 - 162.
  
  
• C.-H. Choi, S.-H. Yang, G. Pollack, S. Ekbote, P.R. Chidambaram, S. Johnson, C.F. Machala, R.W. Dutton:
  "Characterization of Zener-Tunneling Drain Leakage Current in High-Dose Halo Implants";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 133 - 136.
  
  
• M. Choi, L. Milor, L. Capodieci:
  "Simulation of the Circuit Performance Impact of Lithography in Nanoscale Semiconductor Manufacturing";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 219 - 222.
  
  
• C.-T. Chuang, R. Puri:
  "Effects of Gate-to-Body Tunneling Current on PD/SOI CMOS Latches";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 291 - 294.
  
  
• W.-Y. Chung, T.-K. Kim, Y.-T. Kim, B.-J. Hwang, Y.-K. Park, J.-T. Kong:
  "Photoresist Flow Simulation Using the Viscous Flow Model";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 43 - 46.
  
  
• D. Connelly, D.E. Grupp, P. Leon, D. Yergeau:
  "Mobility in UTB-SOI PFETS: Local Coordinate-Based Modeling with the Density Gradient Method";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 51 - 54.
  
  
• A.I. Deckelmann, G. Wachutka:
  "Optimization of L_Gate for ggNMOS ESD Protection Devices Fabricated on Bulk- and SOI-Substrates, Using Process and Device Simulation";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 251 - 254.
  
  
• M. Diebel, S.T. Dunham:
  "Ab-Initio Calculations to Predict Stress Effects on Defects and Diffusion in Silicon";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 147 - 150.
  
  
• K. Dragosits, V. Palankovski, S. Selberherr:
  "Mobility Modeling in Presence of Quantum Effects";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 271 - 274.
  
  
• T. Dudar, O. Mikulchenko, N. Alum, K. Mayaram:
  "Simulation of Electronic Control in Electroosmotic Flow Channels";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 235 - 238.
  
  
• F. Gamiz, A. Godoy, J.B. Roldan:
  "A New Remote Coulomb Scattering Model for Ultrathin Oxide MOSFETs";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 47 - 50.
  
  
• A. Ghetti:
  "Calibration of Hole Scattering Rates in Silicon with a Large Set of Experimental Data Including High Voltage Quantum Yield, Drain Disturb and Substrate Hole Injection";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 71 - 74.
  
  
• J. Gil, H. Shin:
  "Simple Wide-Band On-Chip Inductor Model for Silicon-Based RF ICs";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 35 - 38.
  
  
• B. Govoreanu, P. Blomme, K. Henson, J. Van Houdt, K. De Meyer:
  "An Investigation of the Electron Tunneling Leakage Current through Ultrathin Oxides/High-Κ Gate Stacks at Inversion Conditions";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 287 - 290.
  
  
• B. Govoreanu, P. Blomme, R. Van Langevelde, K. De Meyer:
  "Simulation of Nanofloating Gate Memory with High-Κ Stacked Dielectrics";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 299 - 302.
  
  
• T. Grasser, H. Kosina, S. Selberherr:
  "Reformulation of Macroscopic Transport Models Based on the Moments of the Scattering Integral";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 63 - 66.
  
  
• K. Han, K.-K. Lee, H. Shin:
  "Thermal Noise Modeling for Short Channel MOSFETs";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 79 - 82.
  
  
• M. Hane, T. Ikezawa, T. Ezaki:
  "Coupled Atomistic 3D Process/Device Simulation Considering both Line-Edge Roughness and Random Discrete Dopant Effects";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 99 - 102.
  
  
• M. Hane, Y. Kawakami, H. Nakamura, T. Yamada, K. Kumagai, Y. Watanabe:
  "A New Comprehensive SRAM Soft-Error Simulation Based on 3D Device Simulation Incorporating Neutron Nuclear Reactions";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 239 - 242.
  
  
• L.M. Hillkirk, J.-H. Chun, R.W. Dutton:
  "Investigation of Thermal Breakdown Mechanism in 0.13μm Technology ggNMOS under ESD Conditions";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 125 - 128.
  
  
• A. Hössinger, J. Cervenka, S. Selberherr:
  "A Multistage Smoothing Algorithm for Coupling Cellular and Polygonal Datastructures";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 259 - 262.
  
  
• Y.H. Im, M.O. Bloomfield, C.P. Sukam, J. Tichy, T.S. Cale, J. Seok:
  "Integrated Multiscale Multistep Process Simulation";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 307 - 310.
  
  
• M. Je, H. Shin:
  "Accurate Four-Terminal RF MOSFET Model Accounting for the Short Channel Effect in the Source-to-Drain Capacitance";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 247 - 250.
  
  
• D. Jiao, M. Mazumder, S. Chakravarty, C. Dai, M.J. Kobrinsky, M.C. Harmes, S. List:
  "A Novel Technique for Full-Wave Modeling of Large-Scale Three-Dimensional High-Speed On/Off-Chip Interconnect Structures";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 39 - 42.
  
  
• S. Jin, Y.-J. Park, H.S. Min:
  "A Numerically Efficient Method for the Hydrodynamic Density-Gradient Model";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 263 - 266.
  
  
• C. Jungemann, B. Meinerzhagen:
  "Maximum Drive Current Scaling Properties of Strained Si NMOS in the Deca-Nanometer Regime";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 191 - 194.
  
  
• K. Kim, J.G. Fossum, C.-T. Chuang:
  "Physical Compact Model for Threshold Voltage in Short Channel Double-Gate Devices";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 223 - 226.
  
  
• Y.-T. Kim, K.-H. Lee, W.-Y. Chung, T-K. Kim, Y.-K. Park, J.-T. Kong:
  "Study on Cell Characteristics of PRAM Using the Phase-Change Simulation";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 211 - 214.
  
  
• M. Kondo, A. Hideaki, T. Hamamoto, S. Ito, N. Aoki, T. Wada:
  "A FinFET Design Based on Three-Dimensional Process and Device Simulations";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 179 - 182.
  
  
• H. Kosina, M. Nedjalkov, S. Selberherr:
  "Comparison of Numerical Quantum Device Models";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 171 - 174.
  
  
• T. Krishnamohan, Z. Krivokapic, K.C. Saraswat:
  "A Novel Sub-20nm Depletion-Mode Double-Gate (DMDG) FET";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 243 - 246.
  
  
• T. Kunikiyo, T. Watanabe, T. Kanamoto, H. Asazato, M. Shirota, K. Eikyu, Y. Ajioka, H. Makino, K. Ishikawa, S. Iwade, Y. Inoue, K. Yamashita, M. Kobayashi, A. Gohda, Y. Oda, R. Yamaguchi, H. Umimoto, K. Ohtani:
  "Non-Destructive Inverse Modeling of Copper Interconnect Structure for 90nm Technology Node";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 31 - 34.
  
  
• N. Kusunoki, K. Ohuchi, A. Hokazono, N. Aoki, H. Tanimoto, K. Matsuzawa:
  "Topography and Schottky Contact Models Applied to NiSi SALICIDE Process";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 59 - 62.
  
  
• A. Labun, T. Reeve:
  "CLIMATE: Chip-Level Intertwined Metal and Active Temperature Estimator";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 23 - 26.
  
  
• A.N. Larsen, N. Zangenberg:
  "Experimental Studies of Dopant Diffusion in Strained Si and SiGe";
  Talk: Conference, Boston, USA (invited); 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 7.
  
  
• K.-I. Lee, C. Lee, H. Shin, Y.-J. Park, H.S. Min:
  "An Efficient Method for Frequency-Domain Simulation of Short Channel MOSFET Including the Non-Quasistatic Effect";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 231 - 234.
  
  
• T. Liang, W. Windl, S. Lopatin, G. Duscher:
  "Investigation of the Detailed Structure of Atomically Sharp Ge/SiO₂ Interfaces";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 143 - 146.
  
  
• K. Matsuzawa, T. Ohguro, N. Aoki:
  "Simulation of Noise Characteristics Caused by Discretized Traps in MOSFETs";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 83 - 86.
  
  
• K. Matsuzawa, H. Satake, C. Sutou, H. Kawashima:
  "Simulation of Number of Pulses to Breakdown during TLP for ESD Testing";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 129 - 132.
  
  
• H. Nah, S.-M. Hong, Y.-J. Park, H.S. Min:
  "The Physical and Numerical Implications of the Noise Modeling Method: IFM, CPM, and ERS";
  Talk: Conference, Boston, USA (invited); 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 75 - 78.
  
  
• T.-Y. Oh, C. Jungemann, R.W. Dutton:
  "Hydrodynamic Simulation of RF Noise in Deep Submicron MOSFETs";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 87 - 90.
  
  
• Y. Ohkura, C. Suzuki, H. Amakawa, K. Nishi:
  "Analysis of Gate Currents through High-Κ Dielectrics Using a Monte Carlo Device Simulator";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 67 - 70.
  
  
• M. Orlowski:
  "Zero-Flux Boundary Condition in a Two-Probability Parameter Random Walk Model";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 113 - 116.
  
  
• Q. Ouyang, S.J. Koester, J.O. Chu, K.L. Saenger, J.A. Ott, K.A. Jenkins:
  "Implications of Gate Design on RF Performance of Sub-100nm Strained Si/SiGe n-MODFETs";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 203 - 206.
  
  
• G. Pennington, N. Goldsman:
  "Theory and Design of Field-Effect Carbon Nanotube Transistors";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 167 - 170.
  
  
• E. Pop, R.W. Dutton, R. Dutton, K. Goodson:
  "Detailed Heat Generation Simulations via the Monte Carlo Method";
  Talk: Conference, Boston, USA; 2003-09-03; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 121 - 124.
  
  
• F. Pregaldiny, C. Lallement, D. Mathiot:
  "Quantum Surface Potential Model Suitable for Advanced MOSFETs Simulation";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 227 - 230.
  
  
• R. Rodriguez, R.V. Joshi, J.H. Stathis, C.-T. Chuang:
  "Oxide Breakdown Model and its Impact on SRAM Cell Functionality";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 283 - 286.
  
  
• J. Sato-Wanaga, A. Asai, T. Takagi, M. Tanabe, Z. Yu, R.W. Dutton:
  "Device Design of SiGe HBTs with Low Distortion Characteristics Using Harmonic Balance Device Simulator";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 199 - 202.
  
  
• O. Schenk, M. Hagemann, S. Rollin:
  "Recent Advances in Sparse Linear Solver Technology for Semiconductor Device Simulation Matrices";
  Talk: Conference, Boston, USA (invited); 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 103 - 108.
  
  
• W. Schoenmaker, P. Meuris:
  "On the Inclusion of Floating Domains in Electromagnetic Field Solvers";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 117 - 120.
  
  
• J. Seok, C.P. Sukram, L. Borucki, A. Jindal, J. Tichy, R.J. Gutmann, T.S. Cale:
  "Developing the Structure of a Cu CMP Model";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 303 - 306.
  
  
• X. Shao, N. Goldsman, O. Ramahi, P.N. Guzdar:
  "A New Method for Simulation of On-Chip Interconnects and Substrate Currents with 3D Alternating-Direction-Implicit (ADI) Maxwell Solver";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 315 - 318.
  
  
• Y. Shiho, B. Winstead, M. Foisy, M. Orlowski:
  "Optimization of Sub-50nm MOSFETs to Mitigate Drive Current Degradation due to Silicon Recess in S/D";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 187 - 190.
  
  
• S. Smirnov, H. Kosina, S. Selberherr:
  "Substrate Orientation-Dependence of Electron Mobility in Strained SiGe Layers";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 55 - 58.
  
  
• K. Sonoda, M. Tanizawa, S. Shimizu, Y. Araki, S. Kawai, T. Ogura, S. Kobayashi, K. Ishikawa, Y. Inoui, N. Kotani:
  "Compact Modeling of Flash Memory Cells Including Substrate-Bias-Dependent Hot Electron Gate Current";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 215 - 218.
  
  
• B. Soree, W. Magnus, W. Schoenmaker:
  "Energy Dissipation in Mesoscopic Circuits";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 175 - 178.
  
  
• W. Steinhoegl, G. Schindler, G. Steinlesberger, M. Traving, M. Engelhardt:
  "Scaling Laws for the Resistivity Increase of Sub-100nm Interconnects";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 27 - 30.
  
  
• T. Tanaka, H. Kanata, Y. Tagawa, S. Satoh, T. Sugii:
  "Accurate Transport Modeling with 2D Dopant Profile Effect in L_eff~20nm MOSFETs via Inverse Modeling";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 183 - 186.
  
  
• A.V. Thean, A.L. Barr, T.R. White, Z.-H. Shi, B.-Y. Nguyen, C.-L. Liu, K. Beardmore, J.Z. Jiang, P. Lerma, E. Duda, M. Sadaka, M. Orlowski, B.E. White, J. Mogab:
  "Computer Aided Design of Sub-100nm Strained Si/Si _1-xGe _x n-MOSFET through Integrated Process and Device Simulations";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 195 - 198.
  
  
• K. Uchida, H. Watanabe, J. Koga, A. Kinoshita, S. Takagi:
  "Experimental Study on Carrier Transport Mechanism in Ultrathin Body SOI MOSFETs";
  Talk: Conference, Boston, USA (invited); 2005-09-03 - 2005-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 8 - 13.
  
  
• A. Vithayathil, X. Hu, J. White:
  "Substrate Resistance Extraction Using a Multi-Domain Surface Integral Formulation";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 323 - 326.
  
  
• P. Walker, H. Mizuta, S. Uno, Y. Furuta:
  "Grain Boundary Effects on Subthreshold Behaviour in Single Grain Boundary Nano-TFTs";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 207 - 210.
  
  
• C.-C. Wang, T.Y. Huang, C.H. Diaz:
  "Junction Engineering and Modeling for Advanced CMOS Technologies";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 255 - 258.
  
  
• X. Wang, H.-S. Wong, P. Oldiges, R.J. Miller:
  "Electrostatic Analysis of Carbon Nanotube Arrays";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 163 - 166.
  
  
• W. Wessner, C. Heitzinger, A. Hössinger, S. Selberherr:
  "Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 109 - 112.
  
  
• A. Wettstein, O. Penzin, E. Lyumkis, W. Fichtner:
  "Random Dopant Fluctuation Modeling with the Impedance Field Method";
  Talk: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 91 - 94.
  
  
• B. Wu, T.-W. Tang:
  "Quantum Corrected Boltzmann Transport Model for Tunneling Effects";
  Poster: Conference, Boston, USA; 2003-09-03 - 2003-09-05; in: "Proc. of SISPAD", (2003), 0-7803-7826-1; 279 - 282.