SISDEP 1986 Proceedings
- C.C. Abbas:
"COMPASS: A Design Tool for High-Power Semiconductor Devices";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 615 - 629. - S.A. Abbasi, A.A. Khan:
"Profiles of Boron Diffused into Silicon through Narrow Windows";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 287 - 298. - G.A. Armstrong, R.S. Ferguson, J.R. Davis:
"A Device Simulator for Silicon-On-Insulator MOSFETs";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 449 - 467. - M.J. Baines, C.P. Please, P.K. Sweby:
"Numerical Solution of Dopant Diffusion Equations";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 271 - 286. - S. Bandyopadhyay, M.E. Klausmeier-Brown, C.M. Maziar, M.S. Lundstrom, S. Datta:
"Transport Parameters in Submicron Devices";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 217 - 231. - T.M. Barton, C.M. Snowden, J.R. Richardson:
"Modeling of Recessed-Gate MESFET Structures";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 528 - 543. - M. Budil, W. Jüngling, E. Guerrero, S. Selberherr, H. Pötzl:
"Modeling of Point Defect Kinetics during Thermal Oxidation";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 384 - 397. - M. Cahay, M. McIennan, S. Bandyopadhyay, S. Datta, M.S. Lundstrom:
"Self-Consistent Treatment of Electron Propagation in Devices";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 58 - 67. - C.G. Cahill, K. McCarthy, W.A. Lane:
"MOS Model Parameter Extraction Techniques: A Comparison";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 16 - 29. - E. Cameron, J. Robertson, R. Holwill:
"Control of Oxide Growth by Real-Time Simulation";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 405 - 411. - J.S. Campbell, C. Lyden:
"Cauchy-Newton Methods for the Solution of the Nonlinear Equations of SCD Numerical Modeling";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 362 - 370. - M.J. Cooke:
"Monte-Carlo Simulation of Thin Film Deposition in a Square Groove";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 398 - 404. - G. De Mey:
"Stochastic Geometry Effects in Polysilicon Interconnects";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 182 - 189. - T.C. Denton:
"Validation of BIPOLE";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 169 - 181. - O.L. El-Sayed, K.E. Ismail:
"Performance Optimization and Assessment of Normally-On Ga0.47In0.53As Injection FETs";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 114 - 129. - G.V. Gadiyak, M.S. Obrecht:
"The Use of Factorization Methods for Solving the Charge Transfer Equations in Semiconductor Devices";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 147 - 156. - G.V. Gadiyak, I.V. Travkov:
"Simulation of Insulator Conductivity in an Electric Field";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 572 - 579. - M.D. Giles:
"Calculation of Ion-Implantation Profiles for Two-Dimensional Process Modeling";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 233 - 246. - C. Greenough, C.J. Hunt, R.D. Mount, C.J. Fitzsimons:
"ESCAPADE: A Flexible Software System for Device Simulation";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 639. - R. Guerrieri, P. Ciampolini, A. Gnudi, M. Gibertoni, M. Rudan, G. Baccarani:
"An Investigation of Polycrystalline Silicon MOSFET Operation";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 468 - 479. - S.E. Habib, S.H. Embabi:
"Lateral Power MOSFET with an Improved On-Resistance";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 594 - 605. - G. Hobler, E. Langer, S. Selberherr:
"Two-Dimensional Modeling of Ion Implantation";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 256 - 270. - R. Ismail, G. Amaratunga:
"Contour Meshing with a 1D Remeshing Scheme for the Simulation of MOS Source/Drain Diffusion";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 560 - 571. - H. Jacobs, R. Kircher, C. Werner, M. Strzempa-Depre, K.P. Karmann:
"Design Variations for Suppressing Latch-Up in CMOS Circuits Studied by 2D Transient Device Simulation";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 44 - 57. - R. Kircher, H.M. Muhlhoff, L. Risch, C. Werner:
"Simulation of the Isolating Behavior of a Trench Capacitor";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 314 - 321. - M. Koltai, S. Trutz:
"Process Simulation on the IBM Personal Computer";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 580 - 593. - M. Le Helley, J.P. Chante:
"Ron-BV-CGD Compromise in Power VDMOS Transistors";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 630 - 638. - D. Loret, R. Baets, C.M. Snowden, W.J. Hughes:
"Two-Dimensional Numerical Models for the High Electron Mobility Transistor";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 100 - 113. - C. Lyden, W.M. Kelly, J.S. Campbell, S. Eivers:
"Development and Verification of an Accurate GaAs MESFET Model";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 508 - 512. - C.A. Marinov, P. Neittaanmaki:
"Delay Time for General Distributed Networks with Application to Timing Analysis of Digital MOS Integrated Circuits";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 322 - 336. - P.A. Mawby, C.M. Snowden, D.V. Morgan:
"Numerical Modeling of GaAs/AlGaAs Heterojunctions and GaAs/AIGaAs Heterojunction Bipolar Transistors";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 82 - 99. - A. McCowen, M.S. Towers:
"Algorithms for 1D and 2D Transient Simulators";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 157 - 168. - C. Moglestue:
"Channel Mobility in Silicon MOSFETS";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 204 - 216. - P.J. Mole:
"The Numerical Simulation of Silicon-On-Insulator MOS Devices";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 434 - 448. - S. Mottet, J.E. Viallet:
"Simulation of Ill-V Devices on Semi-Insulating Materials";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 494 - 507. - S. Mottet, J.E. Viallet:
"Transient Hot Electron Behavior in GaAs MESFETS";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 68 - 81. - S.J. Murray, P.J. Mole:
"Towards a Physical Model of Carrier Mobility for Device Simulation";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 190 - 203. - Y. Namba, J. Ueda, T. Miyoshi, S. Ushio:
"Two/Three-Dimensional Device Simulator";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 299 - 313. - M.J. Needs, V. Jovic, C. Taylor, K. Board, M.J. Cooke:
"A 2D Linear Elastic Model for the Local Oxidation of Silicon Using the Boundary Element Method";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 412 - 432. - S.J. Polak, W. Schilders, M. Driessen:
"The CURRY Algorithm";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 131 - 146. - M. Razaz, S.F. Quigley:
"An Investigation of the Effects of Recessed-Gate Geometry on MESFET Performance";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 513 - 527. - M. Razaz, S.F. Quigley:
"Transient Simulation of MOSFETS";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 30 - 43. - S. Selberherr:
"The Status of MINIMOS"";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 2 - 15. - M. Sever:
"An Alternative Approach to Lumped Element Modeling";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 349 - 361. - C.M. Snowden:
"Two-Dimensional Modeling of Non-Stationary Effects in Short Gate Length GaAs MESFETs";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 544 - 558. - J.S. Van Welij:
"Basis Functions Matching Tangential Components on Element Edges";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 371 - 383. - J.E. Viallet, S. Mottet:
"Steady and Transient Simulation of Photodiodes";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 337 - 347. - J.B. Waddell, J. Middleton:
"A Design Model for Surface Termination Profile Optimization of pn-Junctions";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 480 - 493. - R.P. Webb, I.H. Wilson:
"An Extension to the Projected Range Algorithm (PRAL) to Give Energy Deposition Profiles";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 247 - 255. - K.R. Whight, P.A. Gough:
"On-State Modeling of Semiconductor Floating Regions Using Gummel's Algorithm";
Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 606 - 614.