The 2006 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD '06) will be held on September 6-8, 2006 at Monterey Plaza Hotel, Monterey, California.

Program for: September 7, 2006, Poster Session
             September 8, 2006

September 5, 6:00pm - 8:00pm
September 6, 7:30am - 2:00pm

Wednesday, September 6
8:30 - 8:45

Opening Remarks
Phil Oldiges, IBM

Plenary Session

8:45 - 9:30
"Design Tools for Emerging Technologies"
S. Johnson, Y. Avniel, J. White, S. Boyd*, Massachusetts Institute of Technology, Cambridge, MA, *Stanford University, Stanford, CA
9:30 - 10:15
"Model to Hardware Matching for Nanometer Scale Technologies"
Sani R. Nassif, IBM Austin Research Lab
Break (15 minutes)

10:30 - 11:15
"TCAD as an Integral Part of the Semiconductor Manufacturing Environment"
Rainer Minixhofer, Austriamicrosystems, Unterpremstaetten, Austria
11:15 - 12:00
"Active and Passive RF Device Compact Modeling in CMOS Technologies"
Hyungcheol Shin, In Man Kang, Jong Wook Jeon, Joonho Gil*, , Seoul National University, Seoul, South Korea, *RadioPulse Inc., Seoul, South Korea

Session 1 - CNT Transport

1:30 - 1:55

"Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors"
E. Gnani, A. Marchi, S. Reggiani, M. Rudan, G. Baccarani,
University of Bologna, Bologna, Italy
1:55 - 2:20
"Carbon Nanoribbons: An Alternative to Carbon Nanotubes"
B. Obradovic, R. Kotlyar, F. Heinz, P. Matagne, T. Rakshit, D. Nikonov, M. A. Stettler,
Intel Corp., Hillsboro, OR
2:20 - 2:45
"Quantum Electron Transport in Carbon Nanotubes: Velocity Oscillations and Length Dependence"
A. Akturk, G.W. Pennington, N. Goldsman, A.E. Wickenden*,
University of Maryland, College Park, MD, *Army Research Laboratory
2:45 - 3:10
"Influence of Electron-Phonon Interactions on the Electronic Transport in Nanowire Transistors"
S. Jin, Y.J. Park, H.S. Min,
Seoul National University, Seoul, Korea

Session 2 - Device Physics: Mobility and Incomplete Ionization

1:30 - 1:55

"Analytical Modeling of Electron Mobility in Strained Germanium"
S. Dhar, E. Ungersboeck, H. Kosina, T. Grasser, S. Selberherr,
TU Vienna, Vienna, Austria
1:55 - 2:20
"Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs"
E. Ungersboeck, V. Sverdlov, H. Kosina, S. Selberherr,
TU Vienna, Vienna, Austria
2:20 - 2:45
"Modeling of Electron Mobility Degradation for HfSiON MISFETs"
H. Tanimoto, M. Kondo, T. Enda, N. Aoki, R. Iijima, T. Watanabe, M. Takayanagi, H. Ishiuchi,
Toshiba Corp., Yokohama, Japan
2:45 - 3:10
"Physical Model of Incomplete Ionization for Silicon Device Simulation"
A. Schenk*,**, P. P. Altermatt***, B. Schmithusen*,
*ETH-Zurich, Zurich, Switzerland, **Synopsys Switzerland LLC., Switzerland, ***University of Hanover, Germany

Session 3 - Monte Carlo - Strain and Orientation Effects

3:30 - 3:55

"Self-consistent Full-band Monte Carlo Device Simulation for Strained nMOSFETs Incorporating Vertical Quantization, Multi-subband, and Different Channel Orientation Effects"
M. Hane, T. Ikezawa*, M. Kawada*, T. Ezaki**, T. Yamamoto,
NEC Corporation, Sagamihara, Japan, *NEC Informatec Systems, Ltd., Japan, **Hiroshima University, Japan

3:55 - 4:20

"A Tool Development of Rigorous Schrodinger/Luttinger Based Monte Carlo Codes for Scaled MOS Studies in terms of Crystal Orientation, Channel Direction, Mechanical Stress and Applied Voltage"
T. K. Okada,
Toshiba Corp., Kawasaki, Japan

4:20 - 4:45

"Full-Band Monte Carlo Analysis of Electron Transport in Arbitrarily Strained Silicon"
G. Karlowatz, E. Ungersboeck. W. Wessner, H. Kosina,
TU Vienna, Vienna, Austria

4:45 - 5:10

"3D Monte Carlo Device Simulation of NanoWire MOSFETs including Quantum Mechanical and Strain Effects"
A. Ghetti, D. Rideau*,
STMicroeletronics, Agrate Brianza, Italy, *STMicroelectronics, Crolles, France

Session 4 - Process Physics: Defects, Diffusion and Activation

3:30 - 3:55

"Modeling of Defect Evolution and TED under Stress based on DFT Calculations"
H-W. Guo, S.T. Dunham, C-L. Shih, C. Ahn,
University of Washington, Seattle, WA

3:55 - 4:20

"Ab-initio Calculations of Shear Stress Effects on Defects and Diffusion in Silicon"
M. Diebel, H.W. Kennel, M.D. Giles,
Intel Corp., OR

4:20 - 4:45

"Ab-initio Calculation of As-Vacancy Deactivation and Interstitial-Mediated As Diffusion in Strained Si"
Y. Kim, G. Hwang, S. K. Banerjee,
University of Texas at Austin, Austin, TX

4:45 - 5:10

"Predictive Models for Co-doping Effects Between Combinations of Donors (P/As/Sb) and Acceptors (B/Ga/In)"
C. Ahn, S.T. Dunham,
University of Washington, Seattle, WA
6:00pm Dinner

Back to SISPAD 06 homepage