"TCAD Investigation of Abnormal Degradation if Inhibited Cells in NAND Flash Structures"
J. Postel-Pellerin, F. Lalande, P. Canet, R. Bouchakour,
F. Jeuland*, B. Bertello*, B. Villard
Aix-Marseille Universite, Marseille, France, *ATMEL
Corporation, Rousset, France
"A New F(ast)-CMOS Algorithm for Efficient Three-Dimensional NEGF Simulations of Arbitrarily Shaped Silicon Nanowire MUGFETs"
A. Afzalian, C.-W. Lee, N. Dehdashti Akhavan, R. Yan,
I. Ferain, P. Razavi, J.-P. Colinge
Tyndall National Institute, Cork, Ireland
"Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation"
G. Sasso, G. Matz*, C. Jungemann*, N. Rinaldi
University of Naples, Naples, Italy, *Bundeswehr University,
"Impact of Thickness and Deposition Temperature of Gate Dielectric on Valence Bands in Silicon Nanowires"
H. Xu, Y. He, C. Fan*, Y. Zhao, G. Du, J. Kang, R. Han, X. Liu
Peking University & Minstry of Education, Beijing, China,
*Peking University, Beijing, P.R. China
"TCAD Analysis of a Vertical RF Power Transistor"
W. Z. Cai, B. Gogoi, R. B. Davies, D. Lutz, D. Rice,
G. H. Loechelt*, G. Grivna*
HVVi Semiconductors, Phoenix, AZ, *ON Semiconductor,
"Using TCAD, Response Surface Model and Monte Carlo Methods to Model Processes and Reduce Device Variation"
D. Basu, J. Guha*, P. Hatab*, P. Vaidyanathan*,
S. K. Groothuis**, C. Mouli*
University of Texas at Austin, Austin, TX, *Micron Technology,
Boise, ID, **Consultant, SimuTech Group
"Semiclassical Monte Carlo with Quantum-Confinement Enhanced Scattering: Quantum Correction and Application to Short-Channel Device Performance vs. Mobility for Biaxial-Tensile-Strained Silicon nMOSFETs"
N. Shi, L. F. Register, S. K. Benerjee
University of Texas at Austin, Austin, TX
"Population Inversion and Negative Dynamic Conductivity in Optically Pumped Graphene"
A. Satou, F. T. Vasko*, T. Otsuji**, V. Ryzhii
University of Aizu, Aizu-Wakamatsu, Japan, *NAS of Ukraine, Kiev, Ukraine, **Tohoku University, Sendai, Japan
"Comparative Study on Si and Ge p-type Nanowire FETs based on Full-Band Non-Equilibrium Green's Function Simulation"
H. Minari, N. Mori
Osaka University, Osaka, Japan
"Adding Physical Scalability to BSIM4 by Meta-Modeling of Fitting Parameters"
T. Nagumo, K. Takeuchi, S. Kumashiro, Y. Hayashi
NEC Electronics Corp., Kanagawa, Japan
"Simulation on NBTI Degradation Due to Discrete Interface Traps Considering Local Mobility Model and its Statistical Effects"
S. W. Choi, C.-K. Baek*, S. Park, H. H. Park, Y. J. Park
Seoul National University, Seoul, Korea, *Korea Institute for
Advanced Study, Seoul, Korea
"Monte Carlo Study of Ambipolar Transport and Quantum Effects in Carbon Nanotube Transistors"
H. N. Nguyen, S. Retailleau, D. Querlioz, A. Bournel, P. Dollfus
Universite Paris-Sud, Orsay, France
"Simulation of Layout-Dependent STI Stress and Its Impact on Circuit Performance"
L. Yang, X. Li, L. Tian, Z. Yu
Tsinghua University, Beijing, China
"Full Quantum Investigation of Low Field Mobility in Short-Channel Silicon Nanowire FETs"
S. Poli, M. G. Pala*
University of Bologna, Italy, *IMEP-LAHC, Grenoble, France
"Integrated Stress and Process Calibration in Strained-Si Devices"
T.-H. Yu, K.-C. Tu, Y.-M. Sheu, C. H. Diaz
TSMC, Hsinchu, Taiwan
"SPICE Modeling of Self Sustained Operation (SSO) to Program Sub 90nm Floating Body Cells"
M. Gupta, S. Bhardwaj, J. Kwon, V. Gopinath
Innovative Silicon Inc., Santa Clara, CA
"Comparison of In0.7Ga0.3As and Si as Material of Choice for Low-Power High Performance Logic Devices: A Theoretical Investigation"
T. Rakshit, N. Neophytou*, H. Pal**, G. Dewey, M. Hudait,
Intel Corporation, *TU Vienna, Austria, **Purdue University
"2D Quantum Mechanical Simulation of Gate-Leakage Current in Double-Gate n-MOSFETs"
S. Muraoka, R. Mukai, S. Souma, M. Ogawa
Kobe University, Kobe, Japan
"Particle-based Simulation of Conductance of Solid State Nanopores and Ion Channels"
C. Berti, S. Furini*, S. Cavalcanti*, E. Sangiorgi*, C. Fiegna*
University of Bologna and IUNET, Cesena, Italy, University of
Bologna, Bologna, Italy