September 9-11, 2009 — Hotel Del Coronado — San Diego — California


Technical Program:
September 9, 2009
September 10, 2009, Poster Session

Friday, September 11

Session 9 - Interconnects

8:30 - 9:15

Invited Speaker
"CAD Based Interconnect Analysis"
G. Rollins, Synopsys
9:15 - 9:40
"Compact and Efficient Monte Carlo Method to Reproduce Size Effect on Resistivity in Sub-0.1um Metallic Interconnects"
T. Kurusu, M. Wada, N. Matsunaga, H. Tanimoto, N. Aoki, Y. Toyoshima, H. Shibata
Toshiba Corporation, Yokohama, Japan
9:40 - 10:05
"A Fast Void Detection Algorithm for Three-Dimensional Deposition Simulation"
O. Ertl, S. Selberherr
TU Wien, Vienna, Austria
Break (15 minutes)

10:20 - 10:45
"Copper Microstructure Impact on Evolution of Electromigration Induced Voids"
H. Ceric, R. L. de Orio, J. Cervenka, S. Selberherr
TU Wien, Vienna, Austria
10:45 - 11:10
"Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution"
R. L. de Orio, H. Ceric, J. Cervenka, S. Selberherr
TU Wien, Vienna, Austria

Session 10 - Nanoscale Devices

9:15 - 9:40
"Atomistic Simulation of Band-to-band Tunneling in III-V Nanowire FETs"
D. Basu, L. F. Register, *M.J. Gilbert, S. K. Banerjee
University of Texas at Austin, Austin, TX, *University of Illinois at Urbana-Champaign
9:40 - 10:05
"Trial Application of Tight-binding Method to Si-cluster Surrounded by SiO2 in Optimized Atomistic Network"
H. Watanabe, K. Kawabata, T. Ichikawa
Toshiba Corporation, Yokohama, Japan
Break (15 minutes)

10:20 - 10:45
"A Comparison between a Fully-3D Real-Space Versus Coupled Mode-Space NEGF in the Study of Variability in Gate-all-around Si Nanowire MOSFET"
A. Martinez, N. Soane*, A. R. Brown, A. Asenov
University of Glasgow, Glasgow, UK, *University of Santiago de Compostela, Spain
10:45 - 11:10
"Quantum Chemical Molecular Dynamics Study of Degradation Mechanism of Interface Integrity between a HfO2 Thin Film and a Metal Gate Electrode"
T. Inoue, K. Suzuki, H. Miura
Tohoku University, Sendai, Japan

Session 11 - Reliability

1:30 - 1:55

"Gate Current Calculations Using Spherical Harmonic Expansion of Boltzmann Equation"
S. Jin, A. Wettstein*, W. Choi, F. M. Bufler, E. Lyumkis
Synopsys Inc, Mountain View, CA, *Synopsys Switzerland LLC, Zurich, Switzerland
1:55 - 2:20
"Transient 3D Simulation of Single Event Latchup in Deep Submicron CMOS-SRAMs"
Y. Gawlina, L. Borucki, G. Georgakos, G. Wachutka*
Infineon Technologies AG, Munich, Germany, *Munich University of Technology, Munich, Germany
2:20 - 2:45
"Study on Influence of Device Structure Dimensions and Profiles on Charge Collection Current Causing SET Pulse Leading to Soft Errors in Logic Circuits"
K. Tanaka, H. Nakamura, T. Uemura, K. Takeuchi, T. Fukuda, S. Kumashiro
MIRAI-SELETE, Sagamihara, Japan
2:20 - 2:45
"Effect of Impact-Ionization-Generated Holes on the Breakdown Mechanism in LDMOS Devices"
T. Sakuda, N. Sadachika, Y. Oritsuki, M. Yokomichi, M. Miyake, T. Kajiwara, H. Kikuchihara, U. Feldmann, H.J. Mattausch, M. Miura-Mattausch
Hiroshima University, Hiroshima, Japan

Session 12 - Mobility and Transport

1:30 - 1:55

"Unified Mobility Model for Amorphous Organic Materials"
F. Torricelli, Z. M. Kovacs-Vajna, L. Colalongo
University of Brescia, Brescia, Italy
1:55 - 2:20
"Evaluation of Mobility in Graphene Nanoribbons Including Line Edge Roughness Scattering"
L. Zeng, X. Y. Liu, G. Du, J. F. Kang, R. Q. Han
Peking University, China
2:20 - 2:45
"An Investigation on Effective Mobility in Nanowire FETs under Quasi-Ballistic Conditions"
E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani
University of Bologna, Bologna, Italy
2:45 - 3:10
"Investigation of Charge Transport in Amorphous Ge2Sb2Te5 Using the Variable-Range Hopping Model"
E. Piccinini, F. Buscemi, T. Tsafack, R. Brunetti*, M. Rudan, C. Jacoboni*
University of Bologna, Bologna, Italy, *University of Modena and Reggio Emilia, Modena, Italy,

Back to SISPAD 09 homepage