SISPAD 2019 Proceedings

• F. Adamu-Lema, V. Georgiev, A. Asenov:
  "Simulation of Statistical NBTI Degradation in 10nm Doped Channel pFinFETs";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 105 - 108.
  
  
• A. Afzalian, G. Pourtois:
  "ATOMOS: An ATOmistic MOdelling Solver for Dissipative DFT Transport in Ultra-Scaled HfS2 and Black Phosphorus MOSFETs";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 199 - 202.
  
  
• O. Badami, S. Berrada, H. Carrillo-Nunez, C. Medina-Bailon, V. Georgiev, A. Asenov:
  "Surface Roughness Scattering in NEGF using Self-Energy Formulation";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 89 - 92.
  
  
• O. Badami, T. Sadi, V. Georgiev, F. Adamu-Lema, V. Thirunavukkarasu, J. Ding, A. Asenov:
  "Multiscale Modeling of Charge Trapping in Molecule Based Flash Memories";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 49 - 52.
  
  
• L. Balestra, S. Reggiani, A. Gnudi, E. Gnani, G. Baccarani, J. Dobrzynska, J. Vobecky:
  "Numerical Investigation of the Leakage Current and Blocking Capabilities of High-Power Diodes with Doped DLC Passivation Layers";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 243 - 246.
  
  
• Y.S. Bankapalli, H.Y. Wong:
  "TCAD Augmented Machine Learning for Semiconductor Device Failure Troubleshooting and Reverse Engineering";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 21 - 24.
  
  
• S. Bhagdikar, S. Mahapatra:
  "A Stochastic Hole Trapping-Detrapping Framework for NBTI, TDDS and RTN";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 13 - 16.
  
  
• A. Biswas, D. Ludwig, M. Cotorogea:
  "A New Computer-Aided Calibration Technique of Physics Based IGBT & Power-Diode Compact Models with Verilog-A Implementation";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 133 - 136.
  
  
• A. R. Brown, L. Wang, P. Asenov, F.J. Klüpfel, B. Cheng, S. Martinie, O. Rozeau, S. Barraud, J.-C. Barbé, C. Millar, J. Lorenz:
  "From Devices to Circuits: Modelling the Performance of 5nm Nanosheets";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 223 - 226.
  
  
• L. Cai, W. Chen, X. Zhang, Y. Zhao, X. Liu:
  "3D Kinetic Monte Carlo Simulation of Electromigration in Multi-layer Interconnects";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 1 - 4.
  
  
• E. Caruso, F. Bettetti, L. Del Linz, D. Pin, M. Segatto, P. Palestri:
  "Modeling 1/f and Lorenzian noise in III-V MOSFETs";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 97 - 100.
  
  
• E. Caruso, J. Lin, S. Monaghan, K. Cherkaoui, L. Floyd, F. Gity, P. Palestri, D. Esseni, L. Selmi, P.K. Hurley:
  "Relationship Between Capacitance and Conductance in MOS Capacitors";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 315 - 318.
  
  
• W. Chen, L. Cai, X. Liu, G. Du:
  "Trap Dynamics based 3D Kinetic Monte Carlo Simulation for Reliability Evaluation of UTBB MOSFETs";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 307 - 310.
  
  
• M.-C. Cheng:
  "A Quantum Element Reduced Order Model";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 77 - 80.
  
  
• J. Cho, D. Kimpton, E. Guichard:
  "Optimization of Select Gate Transistor in Advanced 3D NAND Memory Cell";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 65 - 68.
  
  
• J. Choi, U. Monga, Y. Park, H. Shima, U. Kwon, S. Pae, D.S. Kim:
  "Impact of BEOL Design on Self-heating and Reliability in Highly-scaled FinFETs";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 93 - 96.
  
  
• F. Ducry, M.H. Bani-Hashemian, M. Luisier:
  "A Hybrid Mode-Space/Real-Space Scheme for DFT+NEGF Device Simulations";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 69 - 72.
  
  
• L. Filipovic:
  "Modeling and Simulation of Atomic Layer Deposition";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 323 - 326.
  
  
• S. Fiorentini, R.L. de Orio, W. Gös, J. Ender, V. Sverdlov:
  "Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 57 - 60.
  
  
• K. Fukuda, J. Hattori, H. Asai, M. Shimizu, T. Hashizume:
  "Simulation of Deep Level Transient Spectroscopy Using Circuit Simulator with Deep Level Trap Model Implemented by Verilog-A Language";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 129 - 132.
  
  
• X. Gao, G. Hennigan, L. Musson, A. Huang, M. Negoita:
  "Simulation and Investigation of Electrothermal Effects in Heterojunction Bipolar Transistors";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 167 - 170.
  
  
• A. Ghetti:
  "Exact Correction of the Self-Force Problem in Monte Carlo Device Simulation";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 29 - 32.
  
  
• L. Giacomazzi, L. Martin-Samos, N. Richard, M. Valant, N. Ollier:
  "First-Principles Investigation of Paramagnetic Centers in P2O5 Based Glasses";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 137 - 140.
  
  
• J.M. Gonzalez-Medina, E. Marin, A. Toral-Lopez, F.G Ruiz, A. Godoy:
  "Numerical Investigation of the Photogating Effect in MoTe2 Photodetectors";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 153 - 154.
  
  
• Y. Guan, Z.C. Li, H. Carrillo-Nunez, V. P. Georgiev, A. Asenov:
  "Quantum Mechanical Simulations of the Impact of Surface Roughness on Nanowire TFET Performance";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 81 - 84.
  
  
• S.D. Guerrieri, F. Bonani, G. Ghione:
  "TCAD Analysis of FinFET Temperature-Dependent Variability for Analog Applications";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 239 - 242.
  
  
• S.-C. Han, S.-M. Hong:
  "Deep Neural Network for Generation of the Initial Electrostatic Potential Profile";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 45 - 48.
  
  
• F.A. Herrera, M. Miura-Mattausch, H. Kikuchihara, T. Iizuka, H.J. Mattausch, H. Takatsuka:
  "Modeling of Temperature-Dependent MOSFET Aging";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 235 - 238.
  
  
• G. Herrero-Saboya, L. Martin-Samos, A. Hemeryck, D. Rideau, N. Richard:
  "Electronic and Structural Properties of Interstitial Titanium in Crystalline Silicon from First-Principles Simulations";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 183 - 186.
  
  
• T. Herrmann, A. Zaka, N.K. Subramani, Z. Zhao, S. Lehmann, Y. Andee:
  "RF Performance Improvement on 22FDX Platform and Beyond";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 263 - 266.
  
  
• T. Ikegami, K. Fukuda, J. Hattori:
  "Implementation of Automatic Differentiation to Python-based Semiconductor Device Simulator";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 41 - 44.
  
  
• H. Ilatikhameneh, H.-H. Park, Z. Jiang, W. Choi, M.A. Pourghaderi, J. Kim, U. Kwon, D.S. Kim:
  "Effective Work-Function Tuning of TiN/HfO2/SiO2 Gate-Stack; a Density Functional Tight Binding Study";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 215 - 218.
  
  
• C. Jungemann, T. Linn, Z. Kargar:
  "On the Simulation of Plasma Waves in HEMTs and the Dyakonov-Shur Instability";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 25 - 28.
  
  
• S. Juong, S. Kim:
  "Leakage Performance Improvement in Multi-Bridge-Channel Field Effect Transistor (MBCFET) by Adding Core Insulator Layer";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 267 - 270.
  
  
• M. Kantner, T. Koprucki, H.-J. Wünsche, U. Bandelow:
  "Simulation of Quantum Dot Based Single-Photon Sources using the Schrödinger-Poisson-Drift-Diffusion-Lindblad System";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 355 - 358.
  
  
• P. Khakbaz, F. Driussi, A. Gambi, P. Giannozzi, S. Venica, D. Esseni, A. Gahoi, S. Kataria, M.C. Lemme:
  "DFT Study of Graphene Doping Due to Metal Contacts";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 279 - 282.
  
  
• K. Y. Kim, B.-G. Park:
  "Transient Simulation of Field-Effect Biosensors: How to Avoid Charge Screening Effect";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 179 - 181.
  
  
• X. Klemenschits, P. Manstetten, L. Filipovic, Siegfried Selberherr:
  "Process Simulation in the Browser: Porting ViennaTS using WebAssembly";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 339 - 342.
  
  
• A. Korzenietz, F. Hille, F.-J. Niedernostheide, C. Sandow, G. Wachutka, G. Schrag:
  "TCAD Simulations Combined with Free Carrier Absorption Experiments Revealing the Physical Nature of Hydrogen-Related Donors in IGBTs";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 251 - 254.
  
  
• A. Kramer, M.L. Van de Put, C.L. Hinkle, W.G. Vandenberghe:
  "Trigonal Tellurium Nanostructure Formation Energy and Bandgap";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 207 - 210.
  
  
• M.M. Krysicki, B. Salski, P. Kopyt:
  "Hybrid Method for Electromagnetic Modelling of Coherent Radiation in Semiconductor Lasers";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 187 - 189.
  
  
• J. Kumar, A. Meersha, M. Shrivastava:
  "A First Principle Insight into Defect Assisted Contact Engineering at the Metal-Graphene and Metal-Phosphorene Interfaces";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 175 - 178.
  
  
• S. Kumashiro, T. Kamei, A. Hiroki, K. Kobayashi:
  "A Robust Simulation Method for Breakdown with Voltage Boundary Condition Utilizing Negative Time Constant Information";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 33 - 36.
  
  
• U. Kwon, J.-G. Min, S.-Y. Lee, A. Schmidt, D.S. Kim, Y. Kayama, Y. Nishizawa, K. Ishikawa:
  "Progress in Dislocation Stress Field Model and Its Appications";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 299 - 302.
  
  
• C. La Torre, A.F. Zurhelle, S. Menzel:
  "Compact Modelling of Resistive Switching Devices based on the Valence Change Mechanism";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 227 - 230.
  
  
• H. Lee, J. Seo, M. Shin:
  "Quantum Transport Simulations of the Zero Temperature Coefficient in Gate-all-around Nanowire pFETs";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 113 - 116.
  
  
• M. Lee, M.-H. Chuang, Y. Li, S. Samukawa:
  "Thermal Conductivity of Silicon Nanowire Using Landauer Approach for Thermoelectric Applications";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 121 - 124.
  
  
• T. Liu, T. Fang, K. Kavanagh, H. Yu, G. Xia:
  "A New Wet Etching Method for Black Phosphorus Layer Number Engineering: Experiment, Modeling and DFT Simulations";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 145 - 147.
  
  
• J. Locati, C. Rivero, J. Delalleau, V. Della Marca, K. Coulié, J. Innocenti, O. Paulet, A. Regnier, S. Niel:
  "TCAD Investigation of Zero-Cost High Voltage Transistor Architectures for Logic Memory Circuits";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 255 - 258.
  
  
• Y. Long, J.Z. Huang, Z. Wei, J.-W. Luo, X. Jiang:
  "OFF Current Suppression by Gate-gontrolled Strain in The N-type GaAs Piezoelectric FinFETs";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 149 - 152.
  
  
• H. Manzanarez, S. Moreau, O. Cueto:
  "Metallic Ions Drift in Hybrid Bonding Integration Modeling, Towards the Evolution of Failure Criterion";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 5 - 8.
  
  
• M. Mattausch:
  "Compact Modeling Perspective - Bridge to Industrial Applications";
  Talk: SISPAD, Udine, Italien (invited); 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 319 - 322.
  
  
• C. Medina-Bailon, T. Dutta, F.J. Klüpfel, S. Barraud, V. Georgiev, J. Lorenz, A. Asenov:
  "Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 275 - 278.
  
  
• L.J. Mele, P. Palestri, L. Selmi:
  "A Model of the Interface Charge and Chemical Noise due to Surface Reactions in Ion Sensitive FETs";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 343 - 346.
  
  
• T. Mori, J. Ida, H. Endo, Y. Arai:
  "Precise Transient Mechanism of Steep Subthreshold Slope PN-Body-Tied SOI-FET and Proposal of a New Structure for Reducing Leakage Current upon Turn-off";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 291 - 294.
  
  
• K. Muthuseenu, E.C. Hylin, H.J. Barnaby, P. Apsangi, M.N. Kozicki, G. Schlenvogt, M. Townsend:
  "TCAD Model for Ag-GeSe3-Ni CBRAM Devices";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 53 - 56.
  
  
• F. Pace, O. Marcelot, P. Martin-Gonthier, O. Saint-Pé, M.B. de Boisanger, R.-M. Sauvage, P. Magnan:
  "An Efficient Method for Modeling Parasitic Light Sensitivity in Global Shutter CMOS Image Sensors";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 363 - 366.
  
  
• A. Pal, S. Mittal, E.M. Bazizi, A. Sachid, M. Saremi, B. Colombeau, G. Thareja, S. Lin, B. Alexander, S.N.B. Ayyagari:
  "Impact of MOL/BEOL Air-Spacer on Parasitic Capacitance and Circuit Performance at 3 nm Node";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 271 - 274.
  
  
• M. Pala, D. Esseni:
  "Full Band Quantum Transport Modelling with EP and NEGF Methods: Application to Nanowire Transistors";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 73 - 76.
  
  
• H.-H. Park, W. Choi, M.A. Pourghaderi, J. Kim, U. Kwon, D.S. Kim:
  "NEGF Simulations of Stacked Silicon Nanosheet FETs for Performance Optimization";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 191 - 193.
  
  
• M. Quell, A. Toifl, A. Hössinger, Siegfried Selberherr, J. Weinbub:
  "Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 335 - 338.
  
  
• K. Reiser, J. Twynam, C. Eckl, H. Brech, R. Weigel:
  "Influence of Accurate Electron Drift Velocity Modelling on the Electrical Characteristics in GaN-on-Si HEMTs";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 247 - 250.
  
  
• T. Rollo, L. Daniel, D. Esseni:
  "Accurate and Efficient Dynamic Simulations of Ferroelectric Based Electron Devices";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 287 - 290.
  
  
• D. Rossi, M. Auf der Maur, A. DiCarlo:
  "A Generalized Multi-Particle Drift-Diffusion Simulator for Optoelectronic Devices";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 359 - 362.
  
  
• N. Rostand, S. Martinie, J. Lacord, O. Rozeau, T. Poiroux, G. Hubert:
  "Single Event Transient Compact Model for FDSOI MOSFETs Taking Bipolar Amplification and Circuit Level Arbitrary Generation Into Account";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 219 - 222.
  
  
• A.-S. Royet, S. Kerdiles, P.A. Alba, C. Bonafos, V. Paillard, F. Cristiano, B. Curvers, K. Huet:
  "Numerical Simulations of Nanosecond Laser Annealing of Si Nanoparticles for Plasmonic Structures";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 331 - 334.
  
  
• S.-M. Ryu, Y. Kim, D. Pederson, J . Lee, Y. Kim, L.L. Raja, J. Uh, S.-J. Choi:
  "Simulation of Chemically Reacting Flow in Plasma Native Oxide Cleaning Process";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 125 - 128.
  
  
• T. Sadi, O. Badami, V. Georgiev, J. Ding, A. Asenov:
  "Physical Insights into the Transport Properties of RRAMs Based on Transition Metal Oxides";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 155 - 158.
  
  
• N. Salles, L. Martin-Samos, S. de Gironcoli, L. Giancomazzi, M. Valant, A. Hemeryck, P. Blaise, B. Sklénard, N. Richard:
  "Defect Creation and Diffusion under Electric Fields from First-Principles: The Prototypical Case of Silicon Dioxide";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 211 - 214.
  
  
• R. Sharma, E. Patrick, J. Yang, F. Ren, M. Law, S. Pearton:
  "Electro-Thermal Analysis and Edge Termination Techniques of High Current β-Ga2O3 Schottky Rectifiers";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 117 - 120.
  
  
• U. Sharma, S. Mahapatra:
  "A SPICE Compatible Compact Model for Process and Bias Dependence of HCD in HKMG FDSOI MOSFETs";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 109 - 112.
  
  
• M. Shin, Y. Cho, S. Jeon:
  "Effect of Trap on Carrier Transport in InAs FET with Al2O3 Oxide: DFT-based NEGF simulations";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 303 - 306.
  
  
• N. Shrestha, C. Chen, Z.-M. Tsai, Y. Li, J.-H. Tarng, S. Samukawa:
  "Barrier Engineering of Lattice Matched AlInGaN/ GaN Heterostructure Toward High Performance E-mode Operation";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 259 - 262.
  
  
• M. Soleimani, N. Asoudegi, P. Khakbaz, M. Pourfath:
  "Negative Capacitance Field-Effect Transistor Based on a Two-Dimensional Ferroelectric";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 295 - 298.
  
  
• N. Speciale, R. Brunetti, M. Rudan:
  "Extending the Numerov Process to the Semiconductor Transport Equations";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 37 - 40.
  
  
• D. Stradi, U.G. Vej-Hansen, P.A. Khomyakov, M.-E. Lee, G. Penazzi, A. Blom, J. Wellendorff, S. Smidstrup, K. Stokbro:
  "Atomistic Modeling of Nanoscale Ferroelectric Capacitors using a Density Functional Theory and Non-Equilibrium Green's-Function Method";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 203 - 206.
  
  
• W.-L. Sung, M.-H. Chuang, Y. Li:
  "Variability of Threshold Voltage Induced by Work-Function Fluctuation and Random Dopant Fluctuation on Gate-All-Around Nanowire nMOSFETs";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 171 - 174.
  
  
• T. Suwa, S. Hayase:
  "Investigation of TCAD Calibration for Saturation and Tail Current of 6.5kV IGBTs";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 101 - 104.
  
  
• C.-W. Teo, K.L. Low, V. Narang, A.V-Y. Thean:
  "TCAD-Enabled Machine Learning Defect Prediction to Accelerate Advanced Semiconductor Device Failure Analysis";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 17 - 20.
  
  
• V. Thirunavukkarasu, H. Carrillo-Nunez, F.D. Alema, S. Berrada, O. Badami, C. Medina-Bailon, T. Datta, J . Lee, Y. Guen, V. Georgiev, A. Asenov:
  "Efficient Coupled-mode space based Non-Equilibrium Green's Function Approach for Modeling Quantum Transport and Variability in Vertically Stacked SiNW FETs";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 85 - 88.
  
  
• R. Tiwari, N. Parihar, K. Thakor, H.Y. Wong, S. Mahapatra:
  "TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 9 - 12.
  
  
• A. Toifl, M. Quell, A. Hössinger, A. Babayan, Siegfried Selberherr, J. Weinbub:
  "Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 327 - 330.
  
  
• A. Toral-Lopez, F. Pasadas, E. Marin, A. Medina-Rull, F.J.G. Ruiz, D. Jimenez, A. Godoy:
  "Device-to-Circuit Modeling Approach to Metal-Insulator-2D Material FETs Targeting the Design of Linear RF Applications";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 163 - 166.
  
  
• F. Torricelli, E. Macchia, P. Romele, K. Manoli, C. Di Franco, Z.M. Kovacs-Vajna, G. Palazzo, G. Scamarcio, L. Torsi:
  "Investigation and Modelling of Single-Molecule Organic Transistors";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 347 - 350.
  
  
• N. Uene, T. Mabuchi, M. Zaitsu, S. Yasuhara, T. Tokumasu:
  "Molecular Dyanamics Simulation of Thermal Chemical Vapor Deposition for Hydrogenated Amorphous Silicon on Si (100) Substrate by Reactive Force-Field";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 159 - 162.
  
  
• B. Venitucci, J. Li, L. Bourdet, Y.M. Niquet:
  "Modeling Silicon CMOS Devices for Quantum Computing";
  Talk: SISPAD, Udine, Italy (invited); 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 195 - 198.
  
  
• D. Verreck, A. Arreghini, F. Schanovsky, Z. Stanojevic, K. Steiner, F. Mitterbauer, M. Karner, G. Van den Bosch, A. Furnemont:
  "3D TCAD Model for Poly-Si Channel Current and Variability in Vertical NAND Flash Memory";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 61 - 64.
  
  
• D. Verreck, G. Arutchelvan, M.M. Heyns, I.P. Radu:
  "Device and Circuit Level Gate Configuration Optimization for 2D Material Field-Effect Transistors";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 283 - 286.
  
  
• B. Vianne, A. Crocherie, S. Guissi, D. Sieger, S. Calderon, D. Rideau, H. Wehbe-Alause:
  "Advances in 3D CMOS Image Sensors Optical Modeling: Combining Realistic Morphologies with FDTD";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 351 - 354.
  
  
• K. Vuttivorakulchai, M. Luisier, A. Schenk:
  "Effect of Stacking Faults on the Thermoelectric Figure of Merit of Si Nanowires";
  Talk: SISPAD, Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 231 - 234.
  
  
• K. Yoshida, K. Tsukahara, N. Sano:
  "Polarization Effect Induced by Discrete Impurity at Semiconductor/Oxide Interface in Si-FinFET";
  Talk: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 311 - 314.
  
  
• Q. Zhang, T. Kudo, J. Gounder, Y. Chen, K. Suzuki, H. Miura:
  "Theoretical Study of the Edge Effect of Dumbbell-shape Graphene Nanoribbon with a Dual Electronic Properties by First-principle Calculations";
  Poster: SISPAD, Udine, Italien; 2019-09-04 - 2019-09-06; in: "Proc. of SISPAD", (2019), 978-1-7281-0939-8; 141 - 144.