E.M. Bazizi, I. Chakarov, T. Herrmann, A. Zaka, L. Jiang, X. Wu, S.M. Pandey, F. Benistant, D. Reid, A. R. Brown, C. Alexander, C. Millar, A. Asenov: "Advanced TCAD Simulation of Local Mismatch in 14nm CMOS Technology FinFETs"; Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 341 - 344.
H. Demel, Z. Stanojevic, M. Karner, G. Rzepa, T. Grasser: "Expanding TCAD Simulations from Grid to Cloud"; Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 186 - 189.
L. Donetti, C. Sampedro, F. Gamiz, A. Godoy, F.J. Garcia-Ruiz, E. Towie, V. P. Georgiev, S.M. Amoroso, C. Riddet, A. Asenov: "Multi-Subband Ensemble Monte Carlo Simulation of Si Nanowire MOSFETs"; Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 353 - 356.
P. Feng, J. Kim, J. Cho, S.M. Pandey, S. Narayanan, M. Tng, B. Liu, E. Banghart, B. Zhu, P. Zhao, M. Rahman, Y. Park, L. Jiang, F. Benistant: "Contact Model Based on TCAD-Experimental Interactive Algorithm"; Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 238 - 241.
K. Fukuda, H. Asai, J. Hattori, H. Koshimoto, T. Ikegami: "A Moving Mesh Method for Device Simulation"; Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 409 - 412.
R. Hussin, L. Gerrer, J. Ding, S.M. Amaroso, L. Wang, M. Semicic, P. Weckx, J. Franco, A. Vanderheyden, D. Vanhaeren, N. Horiguchi, B. Kaczer, A. Asenov: "Reliability aware Simulation Flow: From TCAD Calibration to Circuit Level Analysis"; Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 152 - 155.
H. Ilatikhameneh, R. Rahman, J. Appenzeller, G. Klimeck: "Electrically Doped WTe2 Tunnel Transistors"; Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 270 - 272.
M. Karner, Z. Stanojevic, C. Kernstock, H.W. Cheng-Karner, O. Baumgartner: "Hierarchical TCAD Device Simulation of FinFETs"; Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 258 - 261.
C. Kernstock, Z. Stanojevic, O. Baumgartner, M. Karner: "Layout-Based TCAD Device Model Generation"; Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 198 - 201.
J. Kim, P.J. Oldiges, H.-f. Li, H. Niimi, M. Raymond, P. Zeitzoff, V. Kamineni, P. Adusumilli, C. Niu, F. Chafik: "Specific contact resistivity of n-type Si and Ge M-S and M-I-S contacts"; Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 234 - 237.
P. Kivisaari, T. Sadi, J. Li, V. Georgiev, J. Oksanen, P. Rinke, J. Tulkki: "Bipolar Monte Carlo Simulation of Hot Carriers in III-N LEDs"; Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 393 - 396.
V. Moroz, X.-W. Lin, L. Smith, J. Huang, M. Choi, T. Ma, J. Liu, Y. Zhang, J. Kawa, Y. Saad: "Power-Performance-Area Engineering of 5nm Nanowire Library Cells"; Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 433 - 436.
G. Mugny, D. Rideau, F. Triozon, Y. Niquet, C. Kriso, F.G. Pereira, D. Garetto, C. Tavernier, C. Delerue: "Full-zone k * p parametrization for III-As materials"; Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 28 - 31.
L. Smith, M. Choi, M. Frey, V. Moroz, A. Ziegler, M. Luisier: "FinFET to Nanowire Transition at 5nm Design Rules"; Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 254 - 257.