E. Fuchs, S. Orain, C. Ortolland, P. Dollfus, G. Le Carval, D. Villanueva, A. Dray, H. Jaouen, T. Skotnicki: "A New Quasi Ballistic Model for Strained MOSFET"; Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 303 - 306.
M.D. Giles: "TCAD Challenges in the Nanotechnology Era"; Talk: Conference, Tokyo, Japan (invited); 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 7 - 12.
A. Marchi, S. Reggiani, M. Rudan: "A Schrödinger-Poisson Solution of CNT-FET Arrays"; Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 83 - 86.
V. Moroz, G. Eneman, P. Verheyen, F. Nouri, L. Washington, L. Smith, M. Jurczak, D. Pramanik, X. Xu: "The Impact of Layout on Stress-Enhanced Transistor Performance"; Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 143 - 146.
M. Rudan: "The R-Σ Method for Nanoscale Device Analysis"; Talk: Conference, Tokyo, Japan (invited); 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 13 - 18.
Y. Sheu, Y.-M. Huang, Y.-P. Hu, C.-C. Wang, S. Liu, R. Duffy, A. Heringa, F. Roozeboom, N.E. Cowern, P.B. Griffin: "Modeling Dopant Diffusion in Strained and Strain-Relaxed Epi-SiGe"; Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 75 - 78.