D. Choudhary, J. Catherwood, P. Clancy, C.S. Murthy: "Understanding the Role of Strain in SiGe Devices"; Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 203 - 206.
E. Fuchs, P. Dollfus, G. Lecarval, E. Robilliart, S. Barraud, D. Villanueva, H. Jaouen: "A New Backscattering Model for Nano-MOSFET Compact Modeling"; Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 251 - 254.
T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr: "Advanced Transport Models for Sub-Micrometer Devices"; Talk: Conference, Munich, Germany (invited); 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 1 - 8.
D. Navarro, N. Nakayama, K. Machida, S. Takeda, Y. Chiba, H. Ueno, H.J. Mattausch, M. Miura-Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, S. Miyamoto: "Modeling of Carrier Transport Dynamics at GHz-Frequencies for RF Circuit-Simulation"; Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 259 - 262.
A. Pakfar, P. Holliger, A. Poncet, C. Fellous, D. Dutartre, T. Schwartzmann, H. Jaouen: "Modeling Dopant Diffusion in SiGe and SiGeC Layers"; Talk: Conference, Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proc. of SISPAD", (2004), 3-211-22468-8; 45 - 48.