G.H. Gilmer, L. Pelaz, M. Jaraiz, H.-J. Gossmann, C.S. Rafferty: "Atomistic Simulations of Ion Implantation and Diffusion"; Talk: Conference, Kyoto, Japan (invited); 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 43 - 46.
S. Izumi, T. Kawakami, S. Sakai: "A FEM-MD Combination Method for Silicon"; Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 143 - 146.
K. Kato, T. Uda, K. Terakura: "Atomistic Simulation of Si Oxidation"; Talk: Conference, Kyoto, Japan (invited); 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 187 - 190.
H. Sato, Y. Ito, H. Kunitomo, H. Baba, S. Isomura, H. Masuda: "An Efficient and Accurate Delay Library Generation with RSM"; Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 95 - 98.
M. Valdinoci, D. Ventura, M.C. Vecchi, M. Rudan, G. Baccarani, F. Illien, A. Stricker, L. Zullino: "Impact Ionization in Silicon at Large Operating Temperature"; Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 27 - 30.
T. Wada, H. Umimoto, M. Fujinaga, M. Kimura, T. Uchida, K. Suzuki, Y. Akiyama, M. Hane, M. Takenaka, N. Miura, N. Kontani: "A Three-Dimensional Process Simulator Based on an Open Architecture"; Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 127 - 130.