SISDEP 1991 Proceedings
- A. Abramo, C. Fiegna, F. Venturi, R. Brunetti, E. Sangiorgi, C. Bergonzoni, B. Ricco:
"A New Microscopic Model for Hole Transport in Silicon with Application to Submicron LDD MOSFETs";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 257 - 264. - G. Albinus:
"Thermodynamic Aspects of the Energy Model of Hot Carrier Transport in Semiconductor Devices";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 493 - 498. - J.V. Ashby, C.H. Fitzsimons, R.F. Fowler, C. Greenough, P.J. Mole, W.H. Schilders:
"Three-Dimensional Adaptive Semiconductor Device Simulation";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 467 - 476. - V. Axelrad, G. Rollins, S. Motzny, M. Jaczynski:
"Implementation and Application of the Hydrodynamic Model in a General Purpose Device Simulator";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 483 - 492. - B. Baccus, T. Wada:
"On the Development of a Non-Equilibrium Diffusion Model";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 93 - 102. - H.M. Boots, C.G. de Kort, M.F. Schuurmans, D. Arnold, J.M. Higman:
"Monte Carlo Simulation of Electron and Radiative Emission from Silicon Diodes";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 521 - 526. - D. Chen, E. Kan, U. Ravaioli, Z. Yu, R. Dutton:
"A Self-Consistent Discretization Scheme for Current and Energy Transport Equations";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 235 - 240. - P. Ciampolini, A. Pierantoni, G. Baccarani:
"Three-Dimensional Self-Consistent Modeling of MOS Devices under Non-Isothermal Regime";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 149 - 156. - D. Collard, B. Baccus, E. Dubois:
"Efficient Simulation of Impurity Segregation during Oxidation of Arbitrarily Shaped Multi-Layers Structures";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 125 - 130. - M. Driessen, H.A. Van der Vorst:
"BI-CGSTAB in Semiconductor Modeling";
Talk: Conference, Zurich, Switzerland (invited); 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 45 - 54. - E. Dubois:
"Determination of Carriers Capture Cross-Sections of Si/SiO2 States by Means of Process/Device Simulations";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 425 - 432. - R. Dürr, P. Pichler, H. Ryssel:
"On Limitations of Pair-Diffusion Models for Phosphorus Diffusion";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 103 - 112. - F. Fasching, H. Read, C. Fischer, S. Selberherr, H. Stippel, W. Tuppa:
"A PIF Implementation for TCAD Purposes";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 477 - 482. - A. Gerodolle, S.K. Jones:
"Integration in the 2D Multilayer Simulator TITAN of an Advanced Model for Dopant Diffusion in Polysilicon";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 381 - 388. - G. Ghione, M. Pirola, C.U. Naldi:
"Physical Simulation of Small-Signal Rate-Dependent Anomalies in GaAs MESFETs: A Two-Dimensional Frequency-Domain Approach";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 71 - 80. - A. Gnudi, D. Ventura, G. Baccarani:
"One-Dimensional Simulation of a Bipolar Transistor by Means of Spherical Harmonics Expansion of the Boltzmann Transport Equation";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 205 - 214. - M. Grupen, K. Hess:
"Simulation of Transport over Heterojunctions";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 303 - 312. - N. Hitschfeld, P. Conti, W. Fichtner:
"Grid Generation for 3D Non-Planar Semiconductor Device Structures";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 165 - 172. - G. Hobler, H. Pötzl, L. Gong, H. Ryssel:
"Two-Dimensional Monte Carlo Simulation of Boron Implantation in Crystalline Silicon";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 389 - 398. - K. Horio, A. Oguchi, H. Yanai:
"Two-Dimensional Simulations of AlGaAs/GaAs HBTs with Various Collector Structures";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 81 - 90. - S. Imanaga, Y. Hayafuji:
"Monte Carlo Modeling Encompassing the Effective Bulk State as Well as Quasi Two-Dimensional State of Electrons in the MOS Inversion Layer";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 265 - 274. - K. Iniewski, C.A. Salama:
"A Submicron MOSFET Model for Analog Circuit Simulation";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 553 - 562. - K. Kells, S. Müller, W. Fichtner, G. Wachutka:
"Simulating Temperature Effects in Multi-Dimensional Silicon Devices with Generalized Boundary Conditions";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 141 - 148. - D.B. Klaassen:
"Physical Modeling for Bipolar Device Simulation";
Talk: Conference, Zurich, Switzerland (invited); 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 23 - 44. - R. Kornhuber, R. Roitzsch:
"Self-Adaptive Computation of the Breakdown Voltage of Planar pn-Junctions with Multistep Field Plates";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 535 - 544. - J. Korvink, T. Boltshauser, J. Funk, E. Anderheggen, H. Baltes:
"Modeling of Integrated Lateral Capacitor Sensors";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 367 - 372. - H. Kosina, S. Selberherr:
"Analysis of Filter Techniques for Monte Carlo Device Simulation";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 251 - 256. - T. Kuhn, L. Reggiani, L. Varani:
"A Critical Analysis of the Relaxation Rates for Device Modeling";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 175 - 184. - P. Kuivalainen, H. Ronkainen, M. Andersson, S. Eränen:
"Physical Modeling of Submicron MOSFETs by Using a Modified SPICE MOS3 Model: Application to 0.5μm LDD MOSFETs";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 545 - 552. - S. Liang, L.Z. Hou, T. Gu, C.A. Salama:
"Latch-Up Prevention in Merged Bipolar-MOS Structures for BiCMOS Applications";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 527 - 534. - H. Lin, N. Goldsman, I.D. Mayergoyz:
"A Direct Solution to the Space-Dependent Boltzmann Transport Equation in Silicon";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 195 - 204. - K. Lucas, C.-M. Yuan, A. Strojwas:
"A New Vector Model for Photoresist Bleaching in Optical Lithography";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 375 - 380. - T. Manku, A. Nathan:
"Physical Modeling of Transport Parameters for Strained Layer p-Si1-xGex Devices";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 293 - 302. - G. Massobrio, S. Martinoia, M. Grattarola:
"Ion Sensitive Field Effect Transistor (ISFET) Model Implemented in SPICE";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 563 - 570. - H. Masuda, H. Sugihara, R. Ikematsu:
"Narrow-Channel Effect Simulation of Threshold Voltage and Channel-Conductance in Small MOSFETs Fabricated by LOCOS Process";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 341 - 348. - H. Matsuo, J. Tanaka, A. Mishima, K. Tago, T. Toyabe:
"Three-Dimensional Device Simulation with Arbitrary Curved Boundaries Using the Voronoi Discretization Method";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 157 - 164. - J.R. McMacken, S.G. Chamberlain, J.W. Roberts:
"An Impact Ionization Model for Two-Carrier Energy-Momentum Simulation";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 499 - 504. - S. Mijalkovic, D. Pantic, Z. Prijic, N. Stojadinovic:
"Adaptive Multigrid Strategies for Simulation of Diffusion Processes";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 505 - 512. - G. Nanz:
"A Critical Study of Boundary Conditions in Device Simulation";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 321 - 328. - M. Noell, G. Heiser, S. Poon, M. Orlowski:
"Study of 3D Effects in Box Isolation Technologies";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 331 - 340. - M. Orlowski:
"Challenges for Process Modeling and Simulation in the 90's - An Industrial Perspective";
Talk: Conference, Zurich, Switzerland (invited); 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 3 - 22. - E. Peyrol, L. Pibouleau, J.P. Couderc, S. Domenech:
"Semiconductor Circuit Fabrication Plant Management by Discrete Simulation";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 571 - 578. - F. Pfirsch:
"Multivariable Optimization of Planar Junction Termination with Respect to Technological Tolerances";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 417 - 424. - H. Pimingstorfer, S. Halama, S. Selberherr, K. Wimmer, P. Verhas:
"A Technology CAD Shell";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 409 - 416. - C. Pommerell, W. Fichtner:
"New Developments in Iterative Methods for Device Simulation";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 243 - 248. - L. Rajaonarison, P. Hesto, J.-F. Pone, P. Dollfus:
"Monte Carlo Simulation of Submicron Devices and Processes";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 513 - 520. - H. Read, A. Strojwas, S. Kumashiro:
"Spatial Domain Decomposition in Silicon Devices and its Application to Transient Device Analysis";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 457 - 466. - C. Riccobene, G. Wachutka, J. Bürgler, H. Baltes:
"Operation of Vertical and Lateral Dual Collector Magneto-Transistors Studied by Exact 2D Simulation";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 349 - 358. - W.H. Schilders:
"Initial Guess Strategies and Extrapolation Techniques for Use in the Gummel Method";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 241 - 242. - M. Schrems, M. Budil, G. Hobler, H. Pötzl, J. Hage:
"Oxygen Precipitation in CZ-Silicon during Multistep Annealing Cycles";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 113 - 124. - D. Schroeder:
"An Analytical Model of Non-Ideal Ohmic and Schottky Contacts for Device Simulation";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 313 - 320. - H. Sheng, R. Guerrieri, A. Sangiovanni-Vincentelli:
"Massively Parallel Computation for Three-Dimensional Monte Carlo Semiconductor Device Simulation";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 285 - 290. - C. Simon, S. Mottet, J.E. Viallet:
"Autoadaptive Mesh Refinement";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 225 - 234. - M.A. Stettler, A. Das, M.S. Lundstrom:
"Self-Consistent Solution of the Boltzmann Transport Equation Using the Scattering Matrix Approach";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 215 - 222. - S. Sugino, C.-S. Yao, R. Dutton:
"Parallelization of Monte Carlo Analysis on Hypercube Multiprocessors and on a Networked EWS System";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 275 - 284. - D. Tammaro, A. Benvenuti, G. Ghione:
"Physical Modeling and Performance Evaluation of Ill-V Heterostructure Avalanche Photodiodes";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 435 - 444. - A. Terao, F. Van de Wiele:
"Numerical and Analytical Models of Selective Laser Annealing of Silicon-On-Insulator for 3D Integration";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 445 - 450. - R. Thoma, W.L. Engl:
"A New Approach for the Derivation of Macroscopic Balance Equations beyond the Relaxation Time Approximation";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 185 - 194. - M.J. van Dort, P.H. Woerlee:
"Quantum-Mechanical Correction to the Threshold Voltage of Deep Submicron n-Channel MOSFETs";
Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 451 - 456. - P. Verhas, S. Selberherr:
"Automatic Device Characterization";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 399 - 406. - G. Verzellesi, M.C. Vecchi, M. Zen, M. Rudan:
"Optical Generation in Semiconductor Device Analysis - A General Purpose Implementation";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 57 - 64. - K. Wimmer, R. Bauer, S. Halama, G. Hobler, S. Selberherr:
"Transformation Methods for Non-Planar Process Simulation";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 131 - 138. - H.-J. Wünsche, H. Wenzel, U. Bandelow, J. Piprek, H. Gajewski, J. Rehberg:
"2D Modeling of Distributed Feedback Semiconductor Lasers";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 65 - 70. - A. Zuckerberger, H. Grüning, K. Johansson:
"Turn-On Simulation of Field-Controlled Thyristor";
Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 359 - 366.