Nobuya Mori

Dr Nobuya Mori

Graduate School of Engineering

Osaka University

2-1 Yamada-oka, Suita City

Osaka 565-0871, Japan

Email: mori(at)physics(dot)org

Phone/Fax: (+81) (0) 6 6879 7769

Conference chair, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Program chair, 2013 International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON)
Conference chair, 2013 International Workshop on Computational Electronics (IWCE)
International advisory committee member, IWCE, EDISON
International steering committee member, SISPAD 2013, 2014
Program committee member, SSDM 2008-2014, SISPAD 2008, 2009, 2012, IWCE 2012, EDISON 2007
Editorial board member, Journal of Computational Electronics

Recent and Upcoming Invited Talks

"Scattering basis representation in quantum transport simulation of nanowire transistors," The 9th International Conference on Computational Physics
"Quantum transport simulation of statistical variability in nano-scale MOSFETs,"The 6th IEEE international Nanoelectronics Conference 2014
"R-matrix theory and equivalent model for nanoscale device simulation," 2014 International Workshop on Computational Electronics
"Nano-device simulation from an atomistic view," 2013 IEEE International Electron Devices Meeting
"Non-equilibrium Green's function simulation on effects of atomic disorder and random dopant in Si nanowire transistors," 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
"Device simulation for nanoscale transistors," 2013 Gate Stack Technology Meeting