2003 International Conference on Simulation of Semiconductor Processes and Devices
September 3-5, 2003 Boston Marriott Cambridge Cambridge MA USA
Companion workshop to be held at MIT
Saturday, Sept. 6, 2003, (8:30am to 5pm)
MIT Tang Center, Building E51
"Modeling and Simulation Issues in Strained Si MOSFETs"
Organizers: Judy Hoyt; Dimitri Antoniadis, MIT
The workshop will begin with introductory overviews highlighting the
basics of strained Si/relaxed SiGe materials and device technology.
These reviews will be followed by a series of talks on strained
silicon modeling and simulation issues including: modeling of carrier
transport in strained Si, the impact of strain and energy bands on
performance scaling (Ion/Ioff) of strained Si MOSFETs, theory of
strain relaxation and defects in strained Si and relaxed SiGe, process
modeling (e.g. dopant and Ge diffusion), stress modeling in complex
device structures, and device self-heating.
8:45, Introduction
9:00, Overview of Strained Si/SiGe Device Technology Ken Rim (IBM)
9:30, Ballistic Transport in Strained Si and Strained Ge Layers, Shinichi Takagi (Toshiba)
10:00, Monte Carlo Simulation of Strained Si Mobility and ID Enhancement Scaling, Max Fischetti (IBM)
10:30, Break
11:00, Simulation of Strained Si and SiGe PMOS Devices, Christoph Jungemann (Stanford/Univ. Bremen)
11:30, Multi-layer Heterostructure MOSFETs, Scott Yu (MIT)
12:00 Lunch, Walker Memorial (catered)
1:30, Modeling of Transport in Strained Si Ultra-thin SOI, Francisco Gamiz (U. Granada)
2:00, Modeling of Critical Materials Issues, Eugene Fitzgerald (MIT)
2:30 Break
3:00, Dopant and Ge Diffusion and Annealing Behavior, Mark Law (U. Florida)
3:30, Phonon Scattering in Ultra-Thin Si Films and Self-heating Effects, Mehdi Asheghi (CMU)
4:00 Panel Discussion and wrap-up
5:00 Adjourn
Registration information: The registration fee is $100 (includes continental
breakfast, coffee breaks, and lunch). To register fill out the registration
form and send to Fely Barrera, CISX 332, Stanford University, Stanford,
CA 94305-4075. Checks should be made payable to IEEE/SISPAD03.
Hotel: A block of rooms has been reserved at the Boston Marriott Cambridge.
Website for map of workshop location: http://whereis.mit.edu/