Abramo, A. (University of Udine)

#00-079 *"Well-Tempered MOSFETs: 1D Versus 2D Quantum Analysis"*

Ancona, M. G. (Naval Research Laboratory)

#00-019 *"Nonlinear Discretization Scheme for the Density-Gradient Equations"*

Aronowitz, S. (LSI Logic Corporation)

#00-030 *"Effects of Nitrogen on the Activation/Deactivation of Boron and Indium in N-channel CMOS Devices"*

Asenov, A. (University of Glasgow)

#00-090 *"Effect of Oxide Interface Roughness on Threshold Voltage Fluctuations in Decanano MOSFETs with Ultrathin Gate Oxide"*

Avci, I. (University of Florida)

**Poster:**#00-051*"Model for the Evolution of Dislocation Loops in Silicon"*

Banoo, K. (Purdue University)

#00-047 *"Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices"*

Bork, I. (Infineon Technologies)

#00-099 *"Appropriate Initial Damage Conditions for 'Three-Stream' Point Defect Diffusion Models"*

Bude, J. D. (Bell Labs, Lucent Technologies)

#00-016 *"MOSFET Modeling Into the Ballistic Regime"*

Bufler, F.M. (ETH Zurich)

#00-001 *"Efficient Monte Carlo Device Simulation with Automatic Error Control"*

Chakravarthi, S. (Boston University)

#00-064 *"Modeling of Boron Deactivation/Activation Kinetics during Ion-implant Annealing"*

Charlet, F. (LETI)

#00-017 *"Extraction of (R,L,C,G) Interconnect Parameters in 2D Transmission Lines Using Fast and Efficient Numerical Tools"*

Chung, W-Y. (Samsung Electronics Co. Ltd.)

#00-085 *"Integrated Simulation of Equipment and Topography for Plasma Etching in the DRM Reactor"*

Connelly, D. (Motorola Digital DNA Labs)

#00-046 *"Improved Device Technology Evaluation and Optimization"*

Egley, J.L. (Motorola Inc.)

**Poster:**#00-018 *"SOI Related Simulation Challenges with Moment Based BTE Solvers"*

Eikyu, K. (Mitsubishi Electric Corporation)

**Poster:**#00-041 *"Extraction of the Physical Oxide Thickness Using the Electrical Characteristics of MOS Capacitors"*

Endoh, T. (Tohoku University)

**Poster:**#00-072 *"A High Signal Swing Pass-Transistor Logic Using Surrounding Gate Transistor"*

Ezaki, T. (NEC Corporation)

#00-049 *"Simulation of Hot Hole Currents in Ultra-thin Silicon Dioxides: The Relationship Between Time to Breakdown and Hot Hole Currents"*

#00-065

Füllenbach, T. (German National Research Center for IT)

**Poster:**#00-067 *"Application of an Algebraic Multigrid Solver to Process Simulation Problems"*

Goo, J-S (Stanford University)

**Poster:**#00-061 *"Guidelines for the Power Constrained Design of a CMOS Tuned LNA"*

Han, Z. (University of Maryland)

#00-057 *"2-D Quantum Transport Device Modeling by Self-Consistent Solution of the Wigner and Poisson Equations"*

Hane, M. (NEC Corporation)

#00-050 *"Di-interstitial Diffusivity and Migration Path Calculations Based on Tight-Binding Hamiltonian Molecular Dynamics"*

Hioki, M. (Tohoku University)

#00-071 *"An Analysis of Program and Erase Operation for FC-SGT Flash Memory Cells"*

Hu, Y. (Oregon State University)

#00-040 *"Periodic Steady-State Analysis for Coupled Device and Circuit Simulation"*

#00-055

Iverson, R.B. (Rensselaer Polytechnic Institute)

#00-011 *"A Multi-Scale Random-Walk Thermal-Analysis Methodology for Complex IC-Interconnect Systems"*

Jungemann, C. (Universität Bremen)

#00-015 *"Spatial Analysis of the Electron Transit Time in a Silicon/Germanium Heterojunction Bipolar Transistor by Drift-Diffusion, Hydrodynamic, and Full-Band Monte Carlo Device Simulation"*

Kim, Y-H (Samsung Electronics Co. Ltd.)

#00-083 *"CHAMPS (CHemicAL-Mechanical Planarization Simulator)"*

Kusunoki, N. (Toshiba Corporation)

#00-036 *"A Novel Simulation Method for Oxynitridation and Its Re-oxidation"*

Lee, K. (SAIT)

**Poster:**#00-063 *"Prediction of SiO2 Sputtering Yield Using Molecular Dynamics Simulation"*

Lee, S. (Hankuk University of Foreign Studies)

**Poster:**#00-032 *"A New Method to Determine Channel Mobility Model Parameters in Submicron MOSFET's using Measured S-Parameters"*

Ma, Y. (Tsinghua University)

#00-004 *"Comprehensive Analytical Charge Control and I-V Model of Modern MOSFET's by Fully Comprising Quantum Mechanical Effects"*

Matsuzawa, K. (Toshiba Corporation)

**Poster:**#00-087 *"Monte Carlo Simulation of Current Fluctuation at Actual Contact"*

Matsuzawa, K. (Toshiba Corporation)

**Poster:**#00-086 *"Simulation of Self-Heating and Contact Resistance Influences on nMOSFETs"*

Moens, P. (Alcatel Microelectronics)

**Poster:**#00-091 *"Development of an Optimized 40V pDMOS Device by Use of a TCAD Design of Experiment Methodology"*

Mokhberi, A. (Stanford University)

#00-062 *"Kinetics of Boron Activation"*

Mudanai, S. (University of Texas at Austin)

#00-008 *"Modeling of Direct Tunneling Current Through Gate Dielectric Stacks"*

Ogawa, M. (Kobe University)

#00-100 *"Multi-Band Simulation of Interband Tunneling Devices Reflecting Realistic Band Structure"*

Ohta, T. (Semiconductor Leading Edge Technologies, Inc.)

#00-092 *"A Simulation System for Capacitance Variation by CMP Process Including Defocus Effect"*

Oldiges, P. (IBM Corporation)

#00-053 *"Modeling Line Edge Roughness Effects in sub 100 Nanometer Gate Length Devices"*

Ouyang, Q. (University of Texas at Austin)

#00-009 *"Two-Dimensional BAndgap Engineering in Novel Si/SiGe pMOSFETS with Enhanced Device Performance and Scalability"*

Palestri, P. (University of Udine)

#00-073 *"A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents"*

Palestri, P. (University of Udine)

#00-074 *"Coupled Monte Carlo Simulation of Si and SiO2 Transport in MOS Capacitors"*

Park, J-K (Samsung Electronics Co. Ltd)

#00-084 *"An Exhaustive Method for Characterizing the Interconnect Capacitance Considering the Floating Dummy-Fills by Employing an Efficient Field Solving Algorithm"*

Pennington, G. (University of Maryland)

**Poster:**#00-058 *"A Physics-Based Empirical Pseudopotential Model for Calculating Band Structures of Simple and Complex Semiconductors"*

Pladdy, C. (University of Florida)

**Poster:**#00-052 *"Optimum Node Positioning in Adaptive Grid Refinement and the Delauney-Voroni Algorithm"*

Quay, R. (Frauenhofer Institute of Applied Solid-State Physics)

#00-096 *"Simulation of Gallium-Arsenide Based High Electron Mobility Transistors"*

Rajendran, K. (IMEC vzw)

**Poster:**#00-104 *"Simulation of Boron Diffusion in Strained Si1-x Gex Epitaxical Layers"*

Reggiani, S. (Universita di Bologna)

#00-089 *"Two-qbit Gates Based on Coupled Quantum Wires"*

Sanchez, J. E. (University of Florida)

**Poster:**#00-027 *"Noise Simulation of Semiconductor Devices Under Large-Signal Periodic Conditions" *

Saxena, S. (PDF Solutions)

#00-045 *"Circuit-Device Co-design for High Performance Mixed-Signal Technologies"*

Schoenmaker, W. (IMEC)

#00-043 *"Nuclear Modeling of Quantum Gate Leakage Currents with Sensitivity Analysis"*

Spinelli, A.S. (Universita degli Studi dell'Insubria)

#00-054 *"Quantum-Mechanical 2D Simulation of Surface- and Buried-Channel p-MOS"*

Stiebel, D. (Fraunhofer Institut für Integrierte Schaltungen)

#00-022 *"Modeling Boron Activation and Diffusion in the Presence of {113}-Defects and Boron-Interstitial Complexes"*

Suetake, M. (Hiroshima University)

**Poster:**#00-042 *"HiSIM: A Drift-Diffusion-Based Advanced MOSFET Model for Circuit Simulation with Easy Parameter Extraction"*

Sverdrup, P. G. (Stanford University)

#00-068 *"Sub-Continuum Thermal Simulations of Deep Sub-micron Devices under ESD Conditions"*

Thalhammer, R. (Munich University of Technology)

**Poster:**#00-026 *"Optimizing Free Carrier Absorption Measurements for Power Devices by Physically Rigorous Simulation"*

Tornblad, O. (Stanford University)

#00-101 *"Modeling and Simulation of Phonon Boundary Scattering in PDE-based Device Simulators"*

Tosaka, Y. (Fujitsu Laboratories Ltd.)

**Poster:**#00-056 *"Simulation of Multiple-Bit Soft Errors Induced by Cosmic Ray Neutrons in DRAMs"*

#00-088

Wang, X. (University of Texas at Austin)

#00-012 *"Electron Transport Properties in Novel Orthorhombically-strained Silicon Material Explored by the Monte Carlo Method"*

Yoon, S. (Inha University)

**Poster:**#00-077 *"A Mesh Generation Algorithm for Complex Geometry"*

Yoon, S. (Inha University)

#00-075 *"An Extracting Capacitance in a Stacked DRAM Cell by Numerical Method"*

last update: May 9, 2000

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