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Thursday, 27 September 2007

Session 7A: Future Devices II & Numerics

11:00 - 11:20 Hopping Transport of Electrons via Si-dot
H. Watanabe
11:20 - 11:40 Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method
J. Liu, G. Du, J. Cao, Z. Xia, Y. Wang, R. Han, X. Liu
11:40 - 12:00 Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation
Y. Cheng, I. M. Gamba, A. Majorana, C. W. Shu
12:00 - 12:20 Modeling of Shock Waves in Two-Dimensional Electron Channels: Effect of Tsunami
I.Semenikhin, E.Vostrikova, A.Ivanov, V. Ryzhii

Session 7B: III-V Devices

11:00 - 11:20 Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping
A. Nakajima, K. Itagaki, K. Horio
11:20 - 11:40 Electrothermal Monte Carlo Study of Charge Confinement in GaN HFETs
T. Sadi, R. W. Kelsall
11:40 - 12:00 Hydrodynamic Modeling of AlGaN/GaN HEMTs
S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr
12:00 - 12:20 Simulation of AlGaN/GaN HEMTs - Breakdown Voltage Enhancement Using Grating Field Plates
E. Bahat-Treidel, V. Sidorov, J. H. Würfl, G. Tränkle
12:20 - 12:40 Modelling of Hot Electron Effects in GaN/AlGaN HEMT with AlN Interlayer
A. Brannick, N. Zakhleniuk, B. Ridley, L. Eastman, J. Shealy, W. Schaff