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Wednesday, 26 September 2007

Session 5A: SiC & Power Devices

15:50 - 16:10 Transient Characterization of Interface Traps in 4H-SiC MOSFETs
S. Potbhare, N. Goldsman, G. Pennington, A. Akturk, A. Lelis
16:10 - 16:30 Electro-Thermal, Transient, Mixed-Mode 2D Simulation Study of
SiC Power Thyristors Operating Under Pulsed-Power Conditions
L. M. Hillkirk, A. R. Hefner, R. W. Dutton, S. B. Bayne, H. O'Brien
16:30 - 16:50 Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes
D. Werber, G. Wachutka
16:50 - 17:10 Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge
Termination Structures
U. Knipper, F. Pfirsch, T. Raker, J. Niedermeyer, G. Wachutka

Session 5B: Electronic Transport II

15:50 - 16:10 Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands
A.-T. Pham, C. Jungemann, B. Meinerzhagen
16:10 - 16:30 Monte Carlo Study on Number of Scattering Events for Quasi-Ballistic Transport in MOSFETs
Y. Ohkura, C. Suzuki
16:30 - 16:50 Modeling of Macroscopic Transport Parameters in Inversion Layers
M. Vasicek, M. Karner, E. Ungersboeck, M. Wagner, H. Kosina, T. Grasser
16:50 - 17:10 Study of the Junction Depth Effect on Ballistic Current Using Subband
Decomposition Method
M. A. Pourghaderi, W. Magnus, B. Sorée, M. Meuris, M. Heyns, K. De Meyer