. .

Tuesday, 25 September 2007

Session 1A: Process Simulation I

09:40 - 10:00 Atomistic Modeling of Defect Diffusion in SiGe
P. Castrillo, R. Pinacho, J. E. Rubio, L. M. Vega, M. Jaraiz
10:00 - 10:20 Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches
A. Martinez-Limia, C. Steen, P. Pichler, N. Gupta, W. Windl, S. Paul, W. Lerch
10:20 - 10:40 Molecular Dynamics Modeling of Octadecaborane Implantation into Si
L. A. Marqués, L. Pelaz, I. Santos, P. López, M. Aboy

Session 1B: Strain I

09:40 - 10:00 High Performance Strained Germanium Heterostructure FETs
T. Krishnamohan, D. Kim, C. Jungemann, A.-T. Pham, B. Meinerzhagen, Y. Nishi, K. C. Saraswat
10:00 - 10:20 Strain Induced Drain-Current Enhancement Mechanism in Short-Channel
Bulk Ge-pMOSFETs with Different Channel and Surface Orientations
H. Takeda, T. Ikezawa, M. Kawada, M. Hane
10:20 - 10:40 Validation of the Effect of Full Stress Tensor in Hole Transport
in Strained 65nm-node pMOSFETs
E. Tsukuda, Y. Kamakura, H. Takashino, T. Okagaki, T. Uchida, T. Hayashi, M. Tanizawa, K. Eikyu, S. Wakahara, K. Ishikawa, O. Tsuchiya, Y. Inoue, K. Taniguchi