Best Paper Award
P. Lenarczyk, M. Luisier: "Physical Modeling of Ferroelectric Field-Effect Transistors in the Negative Capacitance Regime" Download
The SISPAD 2016 Best Paper Award will be presented at the SISPAD 2017 in Kamakura, Japan.
2nd rank: W.G. Vandenberghe, M.V. Fischetti, "Modeling Topological-Insulator Field-Effect Transistors using the Boltzmann Equation" Download
3rd rank: Z. Stanojevic, M. Karner, O. Baumgartner, HW. Karner, C. Kernstock, H. Demel, F. Mitterbauer, "Phase-Space Solution of the Subband Boltzmann Transport Equation for Nano-Scale TCAD" Download
Best Poster Award
M. Shin, W.J. Jeong, J. Lee, J. Seo: "First Principles Based NEGF Simulations of Si Nanowire FETs" Download
The SISPAD 2016 Best Poster Award was presented at the SISPAD 2016 conference dinner on September 7, 2016.