The SISPAD 2010 session program is available here
The SISPAD 2010 session schedule is available here
The information about the list of partecipants to SISPAD 2010 is available here
CONFERENCE HIGHLIGHTS
- Six plenary presentations by prominent experts on the main aspects of process and device physics and modeling
- Two parallel sessions of contributed papers (over the three days)
INVITED SPEAKERS
- Andrzej Strojwas - Carnegie Mellon University and PDF Solutions: Cost-effective variability reduction approaches to enable future technology nodes
- Bernd Meinerzhagen - TU Braunschweig: Solving Boltzmann transport equation without Monte Carlo algorithms: new methods for industrial applications
- Hiroshi Iwai - Tokyo Institute of Technology: Si nanowire device and its modeling
- Paolo Spadini - Intel Corp.: Future high-density memories for computing applications: device behavior and modeling challenges
- Giuseppe Iannaccone - Univ. of Pisa: Transport and noise properties of grphene-based transistors revealed through atomistic modeling
- Nobuyuki Sano - Univ. of Tsukuba: Quasi-ballistic transport in nanoscale devices: boundary layer, potential fluctuation and Coulomb interaction
FEATURES FOR 2010
- Conference date and place: 6-8 September 2010 in Bologna, Italy
- Web-based submission of abstracts (http://sispad2010.arces.unibo.it)
- Deadline for abstract submissions: April 10, 2010 at 5:00 p.m. (Central Europe Time)
- Notification for acceptance: May 24, 2010
Deadline for paper submissions in final form: June 27, 2010
TWO WORKSHOPS TO BE HELD ON THURSDAY 9 SEPTEMBER 2010
- Simulation and Characterization of Statistical CMOS Variability and Reliability (Coordinator: Prof. A. Asenov)
- Steep Slope Switches (Coordinator: Prof. A. Ionescu)
SOCIAL EVENTS
- A welcome party on the evening of 6 September 2010
- A gala dinner on the evening of 7 September 2010
- Organized tours for accompanying persons to Ravenna on Monday Sept. 6, 2010 and in downtown Bologna on Tuesday Sept. 7, 2010.