Abstract
Title: Reliability impact and scaling trends
In this talk, variability caused by random charges will be discussed. Since random dopant fluctuation (RDF) is so severe, switching to dopant-less channel FETs is seriously considered today. However, even after RDF is removed, variability caused by remaining charges, such as random telegraph noise (RTN) is still expected to affect extremely scaled MOS devices. Starting from measured statistical data of RTN, a simple theory for predicting the scaling trends of charge-induced variability will be presented.
Bios
Kiyoshi Takeuchi received the B.S., M.S., and Ph.D. degrees from the University of Tokyo in 1984, 1986, and 1989, respectively. In 1989, he joined NEC Corporation. Since then, he has been engaged in research activities on high performance CMOS device/circuit design, modeling, and related device physics. Currently, his major research interest is in MOS device variability and variability-aware circuit design. Currently, he is with Renesas Electronics Corporation. He is also with MIRAI project at Semiconductor Leading Edge Technologies Inc. to study the physics of variability.