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Gérard Ghibaudo

Abstract

Title: Characterization and modelling of device variability in advanced CMOS technologies
 
It has become clear that the statistical variability in the transistor characteristics will be one of the major challenges for coming technological nodes. The detailed knowledge of variability sources is extremely important for the design and manufacturing of variability resistant devices. In this paper, a review of the main methodologies used for variability statistical characterization and typical results obtained on devices from advanced CMOS technologies will be presented. The various variability sources will be analyzed and illustrated with silicon data coming from various device architectures such as bulk, ultra thin film and GAA ones. The data analysis and the physical interpretation of the parameter mismatch will also be discussed owing to simple analytical models as well as to atomistic simulation results.
 

Bios

Gérard Ghibaudo was born in France in 1954. He graduated from Grenoble Institute of Technology in 1979, obtained the PhD degree in Electronics in 1981 and the State Thesis degree in Physics from the same University in 1984. He became associate researcher at CNRS in 1981 where he is now Director of Research at CNRS and Director of IMEP-LAHC Laboratory located at MINATEC-INPG center. During the academic year 1987-1988 he spent a sabbatical year at Naval Research Laboratory in Washington, DC (USA) where he worked on the characterization of MOSFETs. His main research activities were or are in the field of electronics transport, oxidation of silicon, MOS device physics, fluctuations and low frequency noise and dielectric reliability. Dr. G. Ghibaudo has surpervised over 60 PhD students in his career. He was or is involved in several European research projects. During his career he has been author or co-author of around 300 articles in International Refereed Journals, 500 communications and 60 invited presentations in International Conferences and of 24 book chapters.



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