Program for: September 7, 2006, Poster Session
September 8, 2006
REGISTRATION:
September 5, 6:00pm - 8:00pm
September 6, 7:30am - 2:00pm
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| 8:30 - 8:45 | Opening Remarks Phil Oldiges, IBM |
Plenary Session |
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| 8:45 - 9:30 I-1 |
"Design Tools for Emerging Technologies" S. Johnson, Y. Avniel, J. White, S. Boyd*, Massachusetts Institute of Technology, Cambridge, MA, *Stanford University, Stanford, CA |
| 9:30 - 10:15 I-2 |
"Model to Hardware Matching for Nanometer Scale Technologies" Sani R. Nassif, IBM Austin Research Lab |
| Break (15 minutes) | |
| 10:30 - 11:15 I-3 |
"TCAD as an Integral Part of the Semiconductor Manufacturing Environment" Rainer Minixhofer, Austriamicrosystems, Unterpremstaetten, Austria |
| 11:15 - 12:00 I-4 |
"Active and Passive RF Device Compact Modeling in CMOS Technologies" Hyungcheol Shin, In Man Kang, Jong Wook Jeon, Joonho Gil*, , Seoul National University, Seoul, South Korea, *RadioPulse Inc., Seoul, South Korea |
Session 1 - CNT Transport | |
1:30 - 1:55 1-1 |
"Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors" E. Gnani, A. Marchi, S. Reggiani, M. Rudan, G. Baccarani, University of Bologna, Bologna, Italy |
| 1:55 - 2:20 1-2 |
"Carbon Nanoribbons: An Alternative to Carbon Nanotubes" B. Obradovic, R. Kotlyar, F. Heinz, P. Matagne, T. Rakshit, D. Nikonov, M. A. Stettler, Intel Corp., Hillsboro, OR |
| 2:20 - 2:45 1-3 |
"Quantum Electron Transport in Carbon Nanotubes: Velocity Oscillations
and Length Dependence" A. Akturk, G.W. Pennington, N. Goldsman, A.E. Wickenden*, University of Maryland, College Park, MD, *Army Research Laboratory |
| 2:45 - 3:10 1-4 |
"Influence of Electron-Phonon Interactions on the
Electronic Transport in Nanowire Transistors" S. Jin, Y.J. Park, H.S. Min, Seoul National University, Seoul, Korea |
Session 2 - Device Physics: Mobility and Incomplete Ionization | |
1:30 - 1:55 2-1 |
"Analytical Modeling of Electron Mobility in Strained Germanium" S. Dhar, E. Ungersboeck, H. Kosina, T. Grasser, S. Selberherr, TU Vienna, Vienna, Austria |
| 1:55 - 2:20 2-2 |
"Electron Inversion Layer Mobility Enhancement by
Uniaxial Stress on (001) and (110) Oriented MOSFETs" E. Ungersboeck, V. Sverdlov, H. Kosina, S. Selberherr, TU Vienna, Vienna, Austria |
| 2:20 - 2:45 2-3 |
"Modeling of Electron Mobility Degradation for HfSiON MISFETs" H. Tanimoto, M. Kondo, T. Enda, N. Aoki, R. Iijima, T. Watanabe, M. Takayanagi, H. Ishiuchi, Toshiba Corp., Yokohama, Japan |
| 2:45 - 3:10 2-4 |
"Physical Model of Incomplete Ionization for Silicon Device
Simulation" A. Schenk*,**, P. P. Altermatt***, B. Schmithusen*, *ETH-Zurich, Zurich, Switzerland, **Synopsys Switzerland LLC., Switzerland, ***University of Hanover, Germany |
Session 3 - Monte Carlo - Strain and Orientation Effects | |
3:30 - 3:55 3-1 |
"Self-consistent Full-band Monte Carlo Device Simulation for Strained nMOSFETs Incorporating Vertical Quantization, Multi-subband, and Different Channel Orientation Effects" M. Hane, T. Ikezawa*, M. Kawada*, T. Ezaki**, T. Yamamoto, NEC Corporation, Sagamihara, Japan, *NEC Informatec Systems, Ltd., Japan, **Hiroshima University, Japan |
3:55 - 4:20 3-2 |
"A Tool Development of Rigorous Schrodinger/Luttinger Based Monte Carlo Codes for Scaled MOS Studies in terms of Crystal Orientation, Channel Direction, Mechanical Stress and Applied Voltage" T. K. Okada, Toshiba Corp., Kawasaki, Japan |
4:20 - 4:45 3-3 |
"Full-Band Monte Carlo Analysis of Electron Transport in Arbitrarily Strained Silicon" G. Karlowatz, E. Ungersboeck. W. Wessner, H. Kosina, TU Vienna, Vienna, Austria |
4:45 - 5:10 3-4 |
"3D Monte Carlo Device Simulation of NanoWire MOSFETs including Quantum Mechanical and Strain Effects" A. Ghetti, D. Rideau*, STMicroeletronics, Agrate Brianza, Italy, *STMicroelectronics, Crolles, France |
Session 4 - Process Physics: Defects, Diffusion and Activation | |
3:30 - 3:55 4-1 |
"Modeling of Defect Evolution and TED under Stress based on DFT Calculations" H-W. Guo, S.T. Dunham, C-L. Shih, C. Ahn, University of Washington, Seattle, WA |
3:55 - 4:20 4-2 |
"Ab-initio Calculations of Shear Stress Effects on Defects and Diffusion in Silicon" M. Diebel, H.W. Kennel, M.D. Giles, Intel Corp., OR |
4:20 - 4:45 4-3 |
"Ab-initio Calculation of As-Vacancy Deactivation and Interstitial-Mediated As Diffusion in Strained Si" Y. Kim, G. Hwang, S. K. Banerjee, University of Texas at Austin, Austin, TX |
4:45 - 5:10 4-4 |
"Predictive Models for Co-doping Effects Between Combinations of Donors (P/As/Sb) and Acceptors (B/Ga/In)" C. Ahn, S.T. Dunham, University of Washington, Seattle, WA |
| 6:00pm | Dinner |