Session 3: Dopant Diffusion Modeling
Location: Conference
Room London |
| 11:00 |
Modeling B Uphill Diffusion in the Presence
of Ge
Radic1, L.,
Saavedra2, A.F., Law1, M. E.
|
|
1
Department of Electrical and Computer Engineering, University of Florida
2 Department of Materials Science and
Engineering, University of Florida |
|
|
11:20
|
Ab-initio Calculations to Predict Stress
Effects on Boron Solubility in Silicon
Diebel1, M.,
Chakravarthi2, S., Dunham1 S. T., Machala2,
C. F
|
|
1
Department of Physics, University of Washington, Seattle,
2 Silicon Technology Development, Texas
Instruments Inc., Dallas,
|
|
|
11:40
|
Boron Diffusion in Strained and
Strain-Relaxed SiGe
Wang, C. C., Huang, T.
Y., Sheu Y. M., Duffy2, R., Heringa2, A., Cowern3,
N. E. B., Griffin4, P. B., Diaz1, C. H.
|
|
TCAD
project, Device Engineering Division, R&D
1 Advanced Device Engineering Department, Logic
Technology Division, R&D Taiwan Semiconductor Manufacturing
Company, Taiwan
2 Philips Research Leuven, Belgium
3 Advanced Technology Institute, University of
Surrey, UK
4 Center for Integrated Systems, Stanford
University, USA |
|
|
12:00
|
Modeling dopant diffusion in SiGe and SiGeC
layers
Pakfar1,2, A.,
Holliger3, P., Poncet2,
A, Fellous1, C.,
Dutartre1, D.,
Schwartzmann1,
T., Jaouen1,
H.
|
|
1
STMicroelectronics, France
2 LPM - INSA de Lyon, France
3 CEA-DRT-LETI/DTS, France |
|
|
12:20
|
Continuum Modeling of Indium to Predict SSR
Profiles
Chakravarthi, S.,
Chidambaram, P. R., Hornung B., Machala, C. F.
|
|
Silicon
Technology Development, Texas Instruments Inc., Dallas |
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