Session 2: Quantum-Mechanical Models
Location: Conference
Room New York |
| 11:00 |
The Density-Gradient Correction as a
Disguised Pilot Wave of de Broglie
Rudan, M., Gnani, E. ,
Reggiani, S., Baccarani, G.
|
|
E.
De Castro Advanced Research Center on Electronic Systems and
Department of Electronics, Computer Science and Systems, University of
Bologna, Italy |
|
|
11:20
|
Full Band and Approximated Solutions of the
Schrödinger Equation in Silicon Inversion layers
Esseni, D., Palestri, P.
|
|
DIEGM,
Italy |
|
|
11:40
|
A Hybrid 3D Quantum Mechanical Simulation
of FinFETs and Nanowire Devices
Shao, X., Yu, Z.
|
|
Institute
of Microelectronics, Tsinghua University, China |
|
|
12:00
|
On the Calculation of Quasi-Bound States
and Their Impact on Direct Tunneling in CMOS Devices
Gehring, A., Selberherr, S
|
|
Institute
for Microelectronics, TU Vienna, Austria |
|
|
12:20
|
Quantum Mechanical Simulation in DG MOSFETs
Based on a Tight Binding Green's Function Formalism
Ogawa, M., Kagotani, N.,
Ohta M., Miyoshi, T.
|
|
Department
of Electrical and Electronics Engineering, Kobe University, Japan |
|
