| SISPAD 2004
September 2-4, 2004, Munich, Germany
Invited Plenary Lectures:
Cor Claeys, IMEC, Leuven, Belgium
"Physics and modeling of radiation effects in advanced CMOS technology nodes"
Tibor Grasser, Institute for Microelectronics, Technical University of Vienna, Austria
"Advanced transport models for sub-micrometer devices"
Takamitsu Ishihara, Toshiba Corporation,Yokohama, Japan
"Comprehensive understanding of carrier mobility in MOSFETs with oxynitrides and ultrathin gate oxides"
Gerhard Klimeck, Purdue University, West Lafayette, U.S.A.
"NEGF-based simulation for realistic extended devices"
Yoshiyuki Miyamoto, NEC Corporation, Tsukuba, Japan
"Defect and carrier dynamics in nanotubes under electronic excitations:
Time-dependent density functional approaches"
Joachim Piprek, University of California, Santa Barbara, U.S.A.
"Simulation of GaN-based light-emitting devices"
Erik van Veenendaal, Philips Research Laboratories, Eindhoven, The Netherlands
"Characterization and modelling of organic transistors for flexible displays"