Session 10:
Exploration of Future Device Technologies
Location: Conference
Room New York
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| 15:00 |
Three-Dimensional
Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors
Pourfath1,
M., Ungersboeck1, E., Gehring1, A., Cheong2,
B.H., Kosina1, H., Selberherr1, S.
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1
Institute for Microelectronics, TU Vienna, Austria
2 Computational Science and Engineering Lab,
Samsung Advanced Institute of Technology, Korea |
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15:20
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Numerical
Performance Analysis of Carbon Nanotube (CNT) Embedded MOSFETs
Akturk,
A., Pennington, G., Goldsman, N.
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Department
of Electrical and Computer Engineering University of Maryland, USA |
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15:40
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Parameter
Extraction and Validation of an Electronic and Optical Model for
Organic Light-emitting Devices
Ruhstaller1,
B., Beierlein2, T. A., Gmür1, R., Karg2, S.,
Riel2, H.,
Sartoris1,
G.,
Schwarzenbach1,
H., Riess2, W.
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1
Zurich University of Applied Sciences, Center for Computational
Physics, Switzerland
2 IBM Research GmbH, Switzerland |
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