Session 8: 3D Process Simulation I
Location: Conference
Room London
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| 11:00 |
3D
Simulation of Process Effects Limiting FinFET Performance and
Scalability
Burenkov,
A., Lorenz, J.
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|
Fraunhofer
Institute of Integrated Systems and Device Technology, Germany |
|
|
11:20
|
Full
Three-Dimensional Analysis of a Non-Volatile Memory Cell
Hössinger1,
A., Minixhofer2, R., Selberherr1, S.
|
|
1
Institute for Microelectronics, TU Vienna, Austria
2 austriamicrosystems AG, Schloss
Premstätten, Austria |
|
|
11:40
|
Three-Dimensional
Simulation of Orientation-Dependent Wet Chemical Etching
Horn,
A., Wachutka, G.
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|
Institute
for Physics of Electrotechnology, Munich University of Technology,
Germany |
|
|
| 12:00
|
Modeling
CVD effects in Atomic Layer Deposition on the Feature Scale
Jacobs,
W., Kersch, A., Prechtl, G., Schulze Icking-Konert, G.
|
|
Infineon
Technologies, Germany |
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