Session 7: Physical Carrier Transport
Models
Location: Conference
Room New York
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| 11:00 |
On
the Validity of the Relaxation Time Approximation for Macroscopic
Transport Models
Grasser1,
T., Kosina2, H., Selberherr2, S.
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|
1
Christian Doppler Laboratory for TCAD in Microelectronics at the
Institute for Microelectronics
2 Institute for Microelectronics, TU Vienna,
Austria |
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11:20
|
A
Local Mobility Model for Ultra-Thin DGSOI nMOSFETs
Schenk,
A.
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Integrated
Systems Lab., ETH Zürich, Switzerland |
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11:40
|
On
the Relationship Between Carrier Mobility and Velocity in Sub-50 nm
MOSFETs via Calibrated Monte Carlo Simulation
Nayfeh,
O. M., Yu, S., Antoniadis, D. A.
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Microsystems
Technology Laboratories, Massachusetts Institute of Technology,
Cambridge |
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|
| 12:00
|
A
Method for Determining the Screening Length of the Coulombic Scattering
in Non-Degenerate and Degenerate Semiconductors
Rudan,
M., Perroni, G.
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|
E. De Castro Advanced Research Center on
Electronic Systems (ARCES), and
Department of Electronics, Computer Science and Systems (DEIS),
University of Bologna, Italy
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