Invited Speakers

 

A. Asenov, Univ. of Glasgow (UK)
"3D statistical simulation of intrinsic fluctuations in decanano MOSFETs including discrete dopants, oxide thickness fluctuations and LER

D. Antoniadis, MIT (USA)
“MOSFET Design and Modeling Considerations for the Sub-70-nm Technology Nodes”

 R. Dutton, Stanford Univ. (USA)
“Future of TCAD”

M. Jaraiz, Univ. of Valladolid (Spain)
"Atomistic Front-End Process Modelling: A Powerful Approach for Deep Sub-Micron Device Fabrication".

Y. Kamakura, Osaka Univ. (Japan)
“Advances in MC Device Simulation”

W. Schoenmaker, IMEC (Belgium)
“Interconnect Simulation”

A. Scholten, Philips (The Netherlands)
“Compact modeling”

N. Shigyo, Toshiba (Japan)
Statistical analysis of VLSI using TCAD”

 

 

Sispad 2001 | Scope and Topics | Committees | Invited Speakers | Conf-erence Program | Author Info | Location | Registration and Accomodation | Sponsors

Demokritos