Invited Speakers
A. Asenov, Univ. of Glasgow (UK)
"3D statistical simulation of intrinsic fluctuations in decanano MOSFETs including
discrete dopants, oxide thickness fluctuations and LER
D. Antoniadis, MIT
(USA)
MOSFET Design and Modeling Considerations for the Sub-70-nm Technology Nodes
Future of TCAD
M. Jaraiz, Univ. of
Valladolid (Spain)
"Atomistic Front-End Process Modelling: A Powerful Approach for Deep Sub-Micron
Device Fabrication".
Y. Kamakura, Osaka
Univ. (Japan)
Advances in MC Device Simulation
W. Schoenmaker, IMEC (Belgium)
Interconnect Simulation
A. Scholten, Philips
(The Netherlands)
Compact modeling
N. Shigyo, Toshiba
(Japan)
Statistical
analysis of VLSI using TCAD
Sispad 2001 | Scope and Topics | Committees | Invited Speakers | Conf-erence Program | Author Info | Location | Registration and Accomodation | Sponsors